R6020ANX

Nch 600V 20A Power MOSFET Datasheet

Outline
TO-220FM
VDSS 600V
RDS(on) (Max.) 0.22
ID 20A
PD 50W (1)(2)(3)

Features Inner circuit

1) Low on-resistance.
2) Fast switching speed. (1) Gate
(2) Drain
3) Gate-source voltage (VGSS) guaranteed to be 30V. (3) Source

4) Drive circuits can be simple. *1 Body Diode

5) Parallel use is easy.

6) Pb-free lead plating ; RoHS compliant Packaging specifications
Packing Bulk
Reel size (mm) -

Application Tape width (mm) -

Type
Switching Power Supply Basic ordering unit (pcs) 500
Taping code -
Marking R6020ANX

Absolute maximum ratings (Ta = 25C)

Parameter Symbol Value Unit
Drain - Source voltage VDSS 600 V
Tc = 25C ID *1 20 A
Continuous drain current
Tc = 100C ID *1 9.7 A
Pulsed drain current ID,pulse *2 80 A
Gate - Source voltage VGSS 30 V
Avalanche energy, single pulse EAS *3 26.7 mJ
Avalanche energy, repetitive EAR *4 3.5 mJ
*3
Avalanche current IAR 10 A
Power dissipation (Tc = 25C) PD 50 W
Junction temperature Tj 150 C
Range of storage temperature Tstg 55 to +150 C
Reverse diode dv/dt dv/dt *5 15 V/ns

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R6020ANX Data Sheet

Absolute maximum ratings

Parameter Symbol Conditions Values Unit
VDS = 480V, ID = 20A
Drain - Source voltage slope dv/dt 50 V/ns
Tj = 125C

Thermal resistance
Values
Parameter Symbol Unit
Min. Typ. Max.

Thermal resistance, junction - case RthJC - - 2.5 C/W

Thermal resistance, junction - ambient RthJA - - 70 C/W

Soldering temperature, wavesoldering for 10s Tsold - - 265 C

Electrical characteristics (Ta = 25C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Drain - Source breakdown

V(BR)DSS VGS = 0V, ID = 1mA 600 - - V
voltage

Drain - Source avalanche

V(BR)DS VGS = 0V, ID = 20A - 700 - V
breakdown voltage

VDS = 600V, VGS = 0V

Zero gate voltage
IDSS Tj = 25C - 0.1 100 A
drain current
Tj = 125C - - 1000

Gate - Source leakage current IGSS VGS = 30V, VDS = 0V - - 100 nA

Gate threshold voltage VGS (th) VDS = 10V, ID = 1mA 2.5 - 4.5 V
VGS = 10V, ID = 10A
Static drain - source
RDS(on) *6 Tj = 25C - 0.17 0.22
on - state resistance
Tj = 125C - 0.36 -

Gate input resistance RG f = 1MHz, open drain - 13.8 -

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R6020ANX Data Sheet

Electrical characteristics (Ta = 25C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Transconductance gfs *6 VDS = 10V, ID = 10A 7 14 - S

Input capacitance Ciss VGS = 0V - 2040 -

Output capacitance Coss VDS = 25V - 1660 - pF

Reverse transfer capacitance Crss f = 1MHz - 70 -

Effective output capacitance,

Co(er) - 104 -
energy related
VGS = 0V
pF
VDS = 0V to 480V
Effective output capacitance,
Co(tr) - 104 -
time related
*6
Turn - on delay time td(on) VDD 300V, VGS = 10V - 40 -
*6
Rise time tr ID = 10A - 60 -
ns
*6
Turn - off delay time td(off) RL = 30 - 230 460
*6
Fall time tf RG = 10 - 70 140

Gate Charge characteristics (Ta = 25C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Total gate charge Qg *6 VDD 300V - 65 -

Gate - Source charge Qgs *6 ID = 20A - 10 - nC

*6
Gate - Drain charge Qgd VGS = 10V - 25 -

Gate plateau voltage V(plateau) VDD 300V, ID = 20A - 6.0 - V

*1 Limited only by maximum temperature allowed.

*2 PW 10s, Duty cycle 1%
*3 L 500H, VDD = 50V, RG = 25, starting Tj = 25C

*4 L 500H, VDD = 50V, RG = 25, starting Tj = 25C, f = 10kHz

*5 Reference measurement circuits Fig.5-1.

*6 Pulsed

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R6020ANX Data Sheet

Body diode electrical characteristics (Source-Drain) (Ta = 25C)

Values
Parameter Symbol Conditions Unit
Min. Typ. Max.

Inverse diode continuous,

IS *1 - - 20 A
forward current
Tc = 25C
Inverse diode direct current,
ISM *2 - - 80 A
pulsed
*6
Forward voltage VSD VGS = 0V, IS = 10A - - 1.5 V

Reverse recovery time trr *6 - 486 - ns

IS = 20A
Reverse recovery charge Qrr *6 - 7.8 - C
di/dt = 100A/s
Peak reverse recovery current Irrm *6 - 32 - A

Peak rate of fall of reverse

dirr/dt Tj = 25C - 800 - A/s
recovery current

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
Rth1 0.0789 Cth1 0.00458
Rth2 0.579 K/W Cth2 0.0603 Ws/K
Rth3 2.17 Cth3 0.549

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R6020ANX Data Sheet

Electrical characteristic curves

Fig.1 Power Dissipation Derating Curve Fig.2 Maximum Safe Operating Area

120 100
Operation in
Power Dissipation : PD/PD max. [%]

this
area is limited
100 by RDS(ON)
10

Drain Current : ID [A]

80 PW =100us

PW =1ms
60 1
PW = 10ms

40
0.1
20 Ta = 25C
Single Pulse
0 0.01
0 50 100 150 200 0.1 1 10 100 1000

Junction Temperature : Tj [C] Drain - Source Voltage : VDS [V]

Fig.3 Normalized Transient Thermal

Resistance vs. Pulse Width
Normalized Transient Thermal Resistance : r(t)

1000

Ta = 25C
100 Single Pulse
Rth(ch-a)(t) = (t)Rth(ch-a)
10 Rth(ch-a) = 70C/W

0.1
top D = 1
0.01 D = 0.5
D = 0.1
0.001 D = 0.05
D = 0.01
D = Single
0.0001
0.0001 0.01 1 100
Pulse Width : PW [s]

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R6020ANX Data Sheet

Electrical characteristic curves

Fig.4 Avalanche Current vs Inductive Load Fig.5 Avalanche Power Losses

14 5000
Ta = 25C Ta = 25C
VDD = 50V , RG = 25 4500
12

Avalanche Power Losses : PAR [W]

VGF = 10V , VGR = 0V 4000
Avalanche Current : IAR [A]

10 3500

8 3000

2500
6
2000

4 1500

1000
2
500
0 0
0.01 0.1 1 10 100 1.0E+04 1.0E+05 1.0E+06

Coil Inductance : L [mH] Frequency : f [Hz]

Fig.6 Avalanche Energy Derating Curve

vs Junction Temperature
120
Avalanche Energy : EAS / EAS max. [%]

100

80

60

40

20

0
0 25 50 75 100 125 150 175

Junction Temperature : Tj [C]

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R6020ANX Data Sheet

Electrical characteristic curves

Fig.7 Typical Output Characteristics(I) Fig.8 Typical Output Characteristics(II)

20 20
10V 5.5V Ta = 25C 10V
Pulsed 8.0V 6.0V
6.0V
15 Ta = 25C 15 7.0V
Pulsed 5.5V
Drain Current : ID [A]

Drain Current : ID [A]

6.5V

10 10

5.0V 5.0V
5 5

VGS= 4.5V
VGS= 4.5V
0 0
0 10 20 30 40 50 0 1 2 3 4 5

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.9 Tj = 150C Typical Output Fig.10 Tj = 150C Typical Output

Characteristics(I) Characteristics(II)
20 10
Ta = 150C Ta = 150C
10V
Pulsed Pulsed 10V
6.5V 5.0V
8
15 6.0V 6.0V
Drain Current : ID [A]

Drain Current : ID [A]

6
VGS= 4.5V
10 5.0V
4

VGS = 4.5V
5
2

0 0
0 10 20 30 40 50 0 1 2 3 4 5

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

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R6020ANX Data Sheet

Electrical characteristic curves

Fig.11 Breakdown Voltage Fig.12 Typical Transfer Characteristics

vs. Junction Temperature
Drain - Source Breakdown Voltage : V(BR)DSS [V]

900 100
VDS = 10V
850 Pulsed

800 10

Drain Current : ID [A]

Ta= 125C
750 Ta= 75C
Ta= 25C
700 Ta= -25C
1

650

600 0.1

550

500 0.01
-50 0 50 100 150 0 1 2 3 4 5 6 7
Junction Temperature : Tj [C] Gate - Source Voltage : VGS [V]

Fig.13 Gate Threshold Voltage Fig.14 Transconductance vs. Drain Current

vs. Junction Temperature
6 100
VDS = 10V VDS = 10V
Gate Threshold Voltage : VGS(th) [V]

ID = 1mA Pulsed
5
10
Transconductance : gfs [S]

4
1
3

0.1 Ta = -25C
2 Ta = 25C
Ta = 75C
0.01 Ta = 125C
1

0 0.001
-50 0 50 100 150 0.001 0.01 0.1 1 10 100

Junction Temperature : Tj [C] Drain Current : ID [A]

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R6020ANX Data Sheet

Electrical characteristic curves

Fig.15 Static Drain - Source On - State Fig.16 Static Drain - Source On - State
Resistance vs. Gate Source Voltage Resistance vs. Junction Temperature
0.5 0.5
Static Drain - Source On-State Resistance

Static Drain - Source On-State Resistance

Ta = 25C VGS = 10V
Pulsed Pulsed
0.4 0.4

0.3 0.3
: RDS(on) []

: RDS(on) []
ID = 20A

ID = 20A
0.2 0.2
ID = 10A
ID = 10A
0.1 0.1

0 0
0 5 10 15 -50 0 50 100 150

Gate - Source Voltage : VGS [V] Junction Temperature : Tj [C]

Fig.17 Static Drain - Source On - State

Resistance vs. Drain Current
10
Static Drain - Source On-State Resistance

VGS = 10V
Pulsed

1
: RDS(on) []

0.1
Ta = 125C
Ta = 75C
Ta = 25C
Ta = -25C
0.01
0.001 0.01 0.1 1 10 100

Drain Current : ID [A]

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R6020ANX Data Sheet

Electrical characteristic curves

Fig.18 Typical Capacitance Fig.19 Coss Stored Energy

vs. Drain - Source Voltage
10000 18
Ta = 25C
16

Coss Stored Energy : EOSS [uJ]

14
1000 Ciss
Coss
Capacitance : C [pF]

12

Crss 10
100
8

6
10
4
Ta = 25C
f = 1MHz 2
VGS = 0V
1 0
0.01 0.1 1 10 100 1000 0 200 400 600

Drain - Source Voltage : VDS [V] Drain - Source Voltage : VDS [V]

Fig.20 Switching Characteristics Fig.21 Dynamic Input Characteristics

10000 15
Ta = 25C
VDD = 300V Ta = 25C
VDD = 300V
Gate - Source Voltage : VGS [V]

VGS = 10V
RG = 10 ID = 20A
1000 RG = 10
Pulsed
Switching Time : t [ns]

tf 10 Pulsed

100 td(off)

5
10 tr td(on)

1 0
0.01 0.1 1 10 100 0 10 20 30 40 50 60 70
Drain Current : ID [A] Total Gate Charge : Qg [nC]

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R6020ANX Data Sheet

Electrical characteristic curves

Fig.22 Inverse Diode Forward Current Fig.23 Reverse Recovery Time

vs. Source - Drain Voltage vs.Inverse Diode Forward Current
100 1000
Inverse Diode Forward Current : IS [A]

VGS = 0V
Pulsed

Reverse Recovery Time : trr [ns]

10
Ta = 125C
Ta = 75C
Ta = 25C
Ta = -25C
1 100

0.1 Ta = 25C
di / dt = 100A / us
VGS = 0V
Pulsed
0.01 10
0 0.5 1 1.5 0.1 1 10 100

Source - Drain Voltage : VSD [V] Inverse Diode Forward Current : IS [A]

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R6020ANX Data Sheet

Measurement circuits
Fig.1-1 Switching Time Measurement Circuit Fig.1-2Switching Waveforms

Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform

Fig.3-1 Avalanche Measurement Circuit Fig.3-2 Avalanche Waveform

Fig.4-1 dv/dt Measurement Circuit Fig.4-2 dv/dt Waveform

Fig.5-1 di/dt Measurement Circuit Fig.5-2 di/dt Waveform

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R6020ANX Data Sheet

Dimensions (Unit : mm)

D E
TO-220FM A
E1

A4
A2

A
A1

b1
Q
L

e c
b
x A

MILIMETERS INCHES
DIM
MIN MAX MIN MAX
A 16.60 17.60 0.654 0.693
A1 1.80 2.20 0.071 0.087
A2 14.80 15.40 0.583 0.606
A4 6.80 7.20 0.268 0.283
b 0.70 0.85 0.028 0.033
b1 1.10 1.50 0.043 0.059
c 0.70 0.85 0.028 0.033
D 9.90 10.30 0.39 0.406
E 4.40 4.80 0.173 0.189
e 2.54 0.10
E1 2.70 3.00 0.106 0.118
F 2.80 3.20 0.11 0.126
L 11.50 12.50 0.453 0.492
p 3.00 3.40 0.118 0.134
Q 2.10 3.10 0.083 0.122
x - 0.381 - 0.015

Dimension in mm/inches

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R1120A