EE311

Introduction to Semiconductor
Devices

L25 : PN Junction (part-8)

(p )

Dynamic Characteristics

B. Mazhari
B M h i
Professor, Dept. of EE
p
IIT Kanpur

162
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B. Mazhari, IITK
Steady state
P N

VF
-xP xN

DP ni2 DN ni2 qV
J q( ) {exp( ) 1}
LP N D LN N A kT
ni kT qV
q ( ) exp( )
2 2 qFo 2kT

Under transient conditions, in addition to conduction current,

there is displacement current also arising from
charge/discharge of capacitances.
B. Mazhari, IITK
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Transient (or sinusoidal steady state) condition
P N

VF
-xP xN

DP ni2 DN ni2 qVF Q

J q( ) {exp( ) 1}
LP N D LN N A kT t

p 1 J P
Q
Quasi-static
i t ti assumption:
ti GP RP
t q x

Identify Charge stored in the device and its variation with

voltage
Q Q1 Q2
.....
t t t
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 Q Q1 Q2
.....
t t t

Q Q1 V Q2 V
.....
t V t V t

Q V V
C1 C2 .....
t t t

DP ni2 DN ni2 qV
VF Q
J q( ) {exp( ) 1}
LP N D LN N A kT t

DP ni2 DN ni2 qVF V V

J q( ) {exp( ) 1} C1 C2 .....
LP N D LN N A kT t t
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 P N

VF
-xP xN

DP ni2 DN ni2 qV V V
J q( ) {exp( F ) 1} C1 C2 .....
LP N D LN N A kT t t

C1

IO
=
ID

B. Mazhari, IITK C2 166

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Junction (or depletion) capacitance
P N

VF

Q QJ
.....
t t
Q QJ V j
.....
t V j t

QJ
Cj
V j
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 NA
xN W
N A ND
qND
I ND
-x
xP x xP W
N A ND
xN
II
q NDN A
-qNA Vbi V j W 2
2 s N D N A
ND N A
Q j q N D xN q W Q 2q N D N A (V V )
N A ND j S
N A ND
bi j

QJ q S ND N A
capacitance /Area : C j
V j 2 (Vbi V j ) N A N D

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 q S ND N A C jo
Cj
2 (Vbi V j ) N A N D Vj
1
Vbi

q S ND N A
C jo
2 Vbi N A N D

General expression
C jjo
C j
Vj m m: grading coefficient
(1 )
Vbi
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 C jo
C j m=0.5 for abrupt junction
Vj m
(1 ) = 1/3 for linearly graded junction
Vbi

qND
I
-xP x
xN
II
-qNA

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 q S ND N A q NDN A
Cj Vbi V j W 2
2 (Vbi V j ) N A N D 2 s N D N A

S
Cj
W

P N

+ -
+ -
+ -
VF

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Reverse Bias

C1

IO
=
ID Cj

C2

A PN junction diode acts as a voltage dependent variable

capacitor
p : VARACTOR

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 173
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 q S ND N A 1 2 N A ND
Cj (Vbi V j )
2 (Vbi V j ) N A N D C j q S N D N A
2

1
C 2j

VF
Vbi
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Forward Bias
P N

VF

n(x) p(x)

-xP xN

ni2 qV x xN
pN ( x ) (exp( ) 1) exp( )
ND kT LP

ni2 qV
V
QP q pN ( x )dx q (exp( ) 1) LP
B. Mazhari, IITK xN
ND kT 175
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 P N

QP
QN QP QP
VF

DP ni2 DN ni2 qV Q
J q( ) {exp( F ) 1}
LP N D LN N A kT
k t

Q QJ QP QN
.....
t t t t
Q P ,Q
Q N : diffusion charge
Q V j (QP QN )
(CJ Cdiff ) Cdiff
t t V j 176
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B. Mazhari, IITK
Quasi-static assumption
P N

VF

n(x) p(x)

-xP xN

ni2 qV
QP q pN ( x )dx q ((exp(
p( ) 1)) LP
xN
ND kT
xP
ni2 qV
V
QN q nP ( x )dx q (exp( ) 1) LN
B. Mazhari, IITK
NA kT 177
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 qV LP LN
Qdiff QP QN q n (exp( ) 1) (
2
i )
kT ND N A
2 2
DP n DN n qV
VF
J O q( i
) {exp( i
) 1}
LP N D LN N A kT

LP LN

ND N A
Qdiff J O eff eff
DP DN

LP N D LN N A

For P = N = eff =
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 Qdiff J O eff

2 2
DP n DN n qV
VF
J O q(
i
) {exp( i
) 1}
LP N D LN N A kT

Qdiff q
Cdiff J O eff
V j kT

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 qV LP LN
Qdiff QP QN q n (exp( ) 1) (
2
i )
kT ND N A

DP ni2 DN ni2 qVF

J O q( ) {exp( ) 1}
LP N D LN N A kT
DP LP ni2 DN LN ni2 qVF
q
q( 2 2 ) {exp(
{ ( ) 1}
LP ND LN NA kT
QP QN

P N
DP ni2 DN ni2 qV Q
J q( ) {exp( F ) 1}
LP N D LN N A kT t
QP QN QP QN QJ

P N t t t

Charge control Model 180

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B. Mazhari, IITK
 16 -3 16 -3
Example NA=5 x 10 cm ND=5 x 10 cm
D N 20.75 cm 2 s 1
+
+ N N
P P
DP 9.9 cm 2 s 1

N P 0.1 s
x(m)
0 1 50 99 100
kT N AN D
Vbi ln( 2 ) 0.78V 11 qV
q ni J 1.75 10 {exp( ) 1}
kT
q S N NA 0.185 Acm-2at V = 0.6volts
C jo D
2 Vbi N A N D
q
51.5
51 5
nF Cdiff J O effff
cm2 kT
Cj
C jo nF
107 2 nF
cm 710 2
1
Vj cm
B. Mazhari, IITK Vbi 181
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Simulation Results f 103 Hz

C
Cdep
Cdif
F/cm )

-6
6
10
2

q
Cdiff J
kT
C (F

-7 CJO
10 CF
V
(1 F )0.5
Vbi
0.2 0.4 0.6 0.8 1.0
Vanode (volts)

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 CJO q
CF J
VF 0.5 kT
(1 )
Vbi

Canalytical
m)
2

C
analyttical (F/cm

-6
10

-7
10
Ca

02
0.2 04
0.4 06
0.6 08
0.8 10
1.0

B. Mazhari, IITK
Vanode (volts) 183
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Match with analytical model is better when diffusion capacitance
has an additional 0.5 factor CJO q
CF 0.5
0 5 J
V kT
(1 F )0.5
Vbi
cal (F//cm )

Canalytical
2

-6
6
10
nalytic
Can

-7
7
10

0.2 0.4 0.6 0.8 1.0

B. Mazhari, IITK Vanode (volts) 184

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Forward Bias

CJ

IO
=
ID

Cdiff

qV
I O I S (exp( ) 1)
kT

q
Cdiffff IO O O : transit time
kT
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Speed of the diode Small signal model
CJ
CJ

kT q
IO rd
rd IO
=
ID

qV
I O I S (exp( ) 1)
kT Cdiff
q Cdiff
Cdiff IO O
kT
1 1
~ rd f max ~
2 f max Cdiff 2 o

For a diode with thick P and N regions:

O = recombination lifetime
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Large signal Response

VO((t)) IFR

VF t
VIN(t) R

-IIRR
VR RR

IF
RR O ln(1 )
IR

Measurement of Transit time

187
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