EE311

Introduction to Semiconductor
Devices

L-31: MOSFET-2

B. Mazhari
B M h i
Professor, Dept. of EE
p
IIT Kanpur

29
G-Number
B. Mazhari, IITK
 kT NA
F ln
i
SiO2
q n
P type
P-type

Metal

Flatband Depletion
S 0 ns , ps N A
ns ni2 N A ; ps N A 0 S 2F

Strong Inversion
Accumulation
ns N A S 2F
ps N A S 0
Example

SiO2

P-type

Metal

N A 1016 cm 3 ; tox 100nm

EO
1
4.05

4.3

4.96 F
5 17
5.17
10

nF
VFB ms 0.66V Cox =34.5 2 F =0.41V
0 41V
cm
 SiO2

P type
P-type

Metal

VGB VFB VOX S

VOX EOX tOX

ox EOX QS
QS
VGB VFB S
QS Cox
VOX tOX
ox


SiO2
P type
P-type

Metal
(0) S B 0

QS QG
VGB VFB S QG QS CGB
Cox VGB
VGB VFB S QG 1

VGB VGB VGB VGB Cox

1
1 0 CG
VGB Cox


SiO2
P type
P-type

Metal
(0) S B 0

QS
VGB VFB S
Cox
VGB VFB S QS 1 QS
CS
S S S S Cox S

VGB 1
1 CS
S Cox
 CG VGB CS
1 1
VGB Cox S Cox
CoxCS
CG
Cox CS

SiO2

P-type

Cox CS
VG
S
Depletion ns , ps N A 0 S 2F QS ( S )
VGB VFB S
VFB VGB VT Cox

SiO2
P-type

x0 W
Metal

2 qN A (0) S (W ) 0

x 2
S

0
x W
Depletion 2 qN A

x 2
S

F qqN A

x S
SiO2
P-type

x0 W 1
Metal F (0) (W ) Fmax W
2
1 q
Fmax
qN A
W S N A W 2
S x 2 S

2 S QS qN A W 2 S q N A S
W S
qN A
 ns , ps N A 0 S 2F QS ( S )
VGB VFB S
Cox

SiO2
P-type

x0 W
Metal
QS 2 S q N A S

2 S q N A S
VGB VFB S
Cox

2 S q N A 2F
VT VFB 2F
Cox
 Cox CS

QS q N A s
QS 2 S q N A S CS S
S 2 S W

SiO2


P-type

x0 W

2 S q N A S QS s s kT
VFB S CFB LD
VGB
Cox S LD q2 N A
 C/Cox
1.0
0.88

0.5

VGB
-0.66 1.43

VFB 0 VT
Strong Inversion ns N A S 2F ;VGB VT

-
-

-

SiO2
-
- P-type
-
x0 W
Metal

QS ( S ) Qd ( S ) Qinv ( S )
VGB VFB S VGB VFB S
Cox Cox Cox
ni2 q Qinv exp S Qd 2 S q N A S
nS exp S
NA kT
Qd (2F ) Qinv
VGB VFB 2F
Cox Cox
Strong Inversion ns N A S 2F ;VGB VT

-
-

-

SiO2
-
- P-type
-
x0 W
Metal
Qd (2F ) Qinv VT
Qinv
VGB VFB 2F VGB
Cox Cox Cox

2 S q N A 2F
VT VFB 2F
Cox

Qinv Cox VGB VT

 -
-

-

SiO2
-
- P-type
-
x0 W

QS Qd Qinv
QS Qd Qinv Cs Cd Cinv
S S S
Cox CS

Qd 2 S q N A S
Cd
Qinv exp S
Cox

Cinv Cd for s > 2F

Cinv
 C/Cox
1.0
0.88

0.5

VGB
-0.66 1.43

VFB 0 VT
Accumulation ps N A S 0
VGB VFB

+
+
SiO2 +
+
+ Pt
P-type

QS ( S )
VGB VFB S
Cox
q S
pS N A exp Qacc exp S
kT

Qacc
VGB VFB 0 Qacc Cox VGB VFB
Cox
QS Qacc Cacc Cox
Cs Cacc
S S
 C/Cox
1.0
0.88

0.5
Strong Inversion
Accumulation

Depletion

VGB
-0.66 1.43

VFB 0 VT
Cox Cacc
Source of Inversion Charge

-
- +-
VG VT SiO2 - -+
-
- P-type
yp
x0 W
ni2
q nS
pS N A exp S pS
kT

ni ni
G J qG Weff q Weff
2 2

Qinv Cox VGB VT

Qinv Cox VGB VT T
J ni
q Weff
2
 ~600nm

-
-
5 SiO2 -
0 -
-
~300nm

Qd ( S ) Qinv ( S ) Weff 450nm

VGB VFB S
Cox Cox

Qinv Cox VGB VT

T ~ 2 s for =1s
J n
q i Weff
2
 -
-

-

SiO2
-
- P-type
-
x0 W

Cox Cd

Cinv

Inversion capacitance would be significant only at low frequencies

CV Characteristics

C/Cox
1.0
0.88
LF

05
0.5 HF
Accumulation
Strong Inversion
Depletion

VGB
-0.66 1.43

VFB 0 VT
 SiO2 SiO2
--------------------------- ---------------------------
N-type

P-type P-type
CV Characteristics

C/Cox
1.0
0.88

05
0.5
Accumulation
Strong Inversion
Depletion

VGB
-0.66 1.43

VFB 0 VT