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Reading Assignment
1) Pierret : Chap 10 and Chap 11.1
2) Visualization http://jas.eng.buffalo.edu/
PNP or NPN Bipolar Junction Transistor
Narrow-Base vs. Wide-Base BJT.
Charge Flow into/out-of the Base region
Cross-section
DOPING PROFILES UNDER EMITTER
B E C
log N(x)
1E20
SiO2 subcollector
n+ n+ emitter profile
1E18
p (base)
base profile
n (collector)
collector
1E15
profile
n+ subcollector x
p - substrate
High resistance path
Low resistance path
Quasi-neutral
regions
With bias
With bias
recombination
injection diffusion
drift by E-field of
Depletion region
Professor Nathan Cheung, U.C. Berkeley 7
Hole flux Electron flux Current
IEp P+ N P ICp
IE IC
injection recombination
IEn ICBo
}
Reverse Saturation
current
Active Saturation
(forward active)
0 VCB (pnp)
VBC (npn)
Cutoff Inverted Collector-base Junction
forward biased
Active
(reverse active)
0
0
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Minority Carriers ( no recombination in quasi-neutral regions)
C
pno C
pno
E
pno E
pno
x xB xC x xB xC
E E
(1) Forward Active (2) Reverse Active
C
pno C
pno
E
pno E
pno
x xB x x xB x
E C E C
(3) Saturation (4) Cut-off
Professor Nathan Cheung, U.C. Berkeley Example: NE> NB> NC 30
Minority Carriers ( with recombination in quasi-neutral regions)
V >0 V <0 V <0 V >0
BE BC BE BC
C
pno C
pno
E
pno E
pno
x xB xC x xB xC
E E
(1) Forward Active (2) Reverse Active
C
pno C
pno
E
pno E
pno
x xB xC x xB xC
E E
(3) Saturation (4) Cut-off
Professor Nathan Cheung, U.C. Berkeley Example: NE> NB> NC 31