POWER ELECTRONICS

MID-1 DESCRIPTIVE

SET-A

1. (a) Explain about string efficiency and derating factor in detail?

(b) Exp lain the importance of gate signal in SCR.
2. (a) Explain in brief the dynamic characteristics of a power diode?(b) With the help of neat
diagram, explain the operation of resistance firing circuit.
3. (a) Explain in detail the turn off process of GTO using two transistor analogy?
(b) Write the applications of gto?
4. (a) Explain the single phase ac voltage controller using RL load by using firing angle as 30 0?
(b) Write the relations of rms, average and power factor of ac voltage controller for R load?
5. (a) Explain the concept of integral cycle control and derive the relations of rms, Itavg, power
factor?
(b) Derive power factor= (per unit power)1/2

SET-B

1. (a) Explain the operation of single phase A.C voltage controller with neat circuit diagram and
output waveforms with respect to source voltage waveforms at = 60 0?
(b) Write the relations of rms, average and power factor of ac voltage controller for R load?
2. (a) Draw the V-I characteristics of a triac and explain is working principle.
(b) what is the value of Itavg and Itrms value of triac for full wave ac voltage controller?
3. (a) Describe the series and parallel operations of SCRs?
(b) A 100 A SCR is to be used in parallel with a 150 A SCR. The on-state voltage drops of the
SCRs are 2.1 and 1.75 V, respectively. Calculate the series resistance that should be connected
with each SCR if the two SCRs have to share the total current 250 A in proportion to their ratings.
4. Explain the current commutation in detail?

SET-C

1. (a) Explain the operation of mosfet in enhancement and depletion mode using neat diagram?
b) draw the transfer characteristics of mosfet?
2 (a) Explain the different modes of operation of scr in detail?
(b) Define lathing current and holding current ? Write the the relation between them?
3 (a) Explain the parallel operation of Scr?
(b) derive the relation of resistance in series operation of scr?
4 (a) Explain the single phase ac voltage controller using R load by using firing angle as 60 0?
(b) A single-phase a.c. voltage regulator with R-L load has the following details: Supply voltage:
230 V at 50 Hz, R = 4 and L= 3. Calculate: (i) The control range of firing angle. (ii) The
maximum value of r.m.s load current. (iii) The maximum power and power factor
5. Explain the natural commutation in detail? and draw the circuit diagram of complementary
commutation?

SET-D
1. (a) Explain the constructional details of IGBT in detail?
(b) Compare mosfet and IGBT?
2. (a) Explain series operation of scr?
 (b) Write the importance of static and dynamic equalizing circuits in series and parallel operation
of scr?
3 (a) Explain the concept of integral cycle control and derive the relations of rms, Itavg, power
factor?
(b) Derive power factor= (per unit power)1/2
4 (a) Explain about the turn on methods for SCR?
(b) Explain the two transistor analogy of the thyristor.
5 Explain the voltage commutation with neat circuit diagram?

OBJECTIVE

SET-A

1. SCR is a
a. 5 layer 3 junction device. b. 2 layer 1 junction device.
c. 4 layer 3 junction device. d. 4 layer 2 junction device.
2. SCR is ___________ device.
a. semi-controlled.
b. full controlled.
c. uncontrolled.
d. none of the above.
3. Gate triggering is done when SCR is in
a. reverse biased condition.
b. forward biased condition.
c. either forward or reverse.
d. none of the above.
4. Holding current is
a. minimum anode current required above which thyristor gets turn on.
b. minimum current below which anode current must fall for turning off.
c. minimum anode current above which thyristor gets turn off.
d. minimum current below which anode current must fall for turning on.
5. Which of the following is true for holding current ?
a. It is related to turn on process of thyristor.
b. It is related to turn off process of thyristor.
c. Both ( A ) and ( B ).
d. It is related to conduction process of thyristor.
6. Holding current of a thyristor is
a. greater than latching current.
b. equal to latching current.
c. less than latching current.
d. both B and C.
7. If latching current of a thyristor is 10 mA then its holding current should be
a. 0.007 A. b. 0.005 A. c. 0.002 A.d. 0.001 A..
8. Latching current is

9. minimum anode current required for turning on of thyristor.

10. minimum anode current required for turning on of thyristor.
 11. minimum anode current required for turning on of thyristor.
12. minimum anode current required for turning on of thyristor.
a. minimum anode current required for turning on of thyristor.
b. minimum anode current required for turning off thyristor.
c. maximum current that a thyristor can handle.
d. none of the above.
9. The following is a uni-polar device:
A) BJT B) IGBT C) GTO D) MOSFET
10. When a thyristor in the forward blocking state, then
A) All 3 junctions are reversed.
B) Anode and cathode junctions are forward biased but gate junction is reverse biased.
C) Anode junction is forward biased but other two are reverse biased.
D) Anode &gate junction are forward biased but cathode is reverse biased.

11. Let of a thyristor Vc1, Vc2, Vc3 are forward break over voltage for gate current Ig1, Ig2, Ig3
respectively. Then

a. Vc1 > Vc2 > Vc3 when Ig1 > Ig2 > Ig3.

b. Vc1 > Vc2 > Vc3 when Ig1 < Ig2 < Ig3.

c. Vc1 = Vc2 = Vc3 any value of Ig.

d. Vc1 > Vc2 > Vc3 when Ig1 Ig2 Ig3.

12. A modern power semiconductor device that combines the characteristics of BJT and MOSFET is

A) GTO B) FCT C) IGBT D) MCT

13. turn-off time of an SCR is measured from the instant:

a) anode current becomes zero b) anode voltage becomes zero
c) anode voltage and anode current becomes zero d) gate current becomes zero

14. The function of snubber circuit connected across anscr is to

a. suppress b. to increase c. both a and b d. none

15. Thyristor has anode A, cathode K and gate G and different functions named J 1, J2, J3. When the
thyristor is turned ON and conducting

a. J1 and J2 are forward biased and J3 is reverse biased.

b. J1 and J3 are forward biased and J2 is reverse biased.
c. J1 is forward biased and J2, J3 are reverse biased.
d. All J1, J2, J3 are forward biased

16. in a commutation circuit employed to turn-off an SCR, satisfactory turn-off is obtained when
a) circuit turn-off time < device turn-off time b) circuit turn-off time > device turn-off time
c) circuit time constant > device turn-off time d) circuit time constant < device turn-off time

17. A cycloconverter is a
(a) Frequency changer from higher to lower frequency with one-state conversion
(b) Frequency changer from higher to lower frequency with two-stage conversion
 (c) Frequency changer from lower to higher frequency with one-stage conversion
(d) Either a or c
18. In a GTO, anode current begins to fall when gate current
(a) Is negative peak at time t=0
(b) Is negative peak at t = storage period tS
(c) Just begins to become negative at t = 0
(d) Is negative peak at t = (tS + fall time)
19. AC voltage controllers convert
a) fixed ac to fixed dc b) variable ac to variable dc c) fixed ac to variable ac
d) variable ac to fixed ac
20. Earlier then the semiconductor technology, ___________ devices were used for voltage control
applications.
a) cycloconverters b) vacuum tubes c) tap changing transformer d) induction machine

SET-B

1.A thyristor (SCR) is a

a) P-N-P device b) N-P-N device c) P-N-P-N device d) P-N device
2. Which terminal does not belong to the SCR?
a) Anode b) Gate c) Base d) Cathode
3. An SCR is a
a) four layer, four junction device b) four layer, three junction device
c) four layer, two junction device d) three layer, single junction device
4. Choose the false statement.
a) SCR is a bidirectional device b) SCR is a controlled device
c) In SCR the gate is the controlling terminal
d) SCR are used for high-power applications
5. In the SCR structure the gate terminal is located
a) near the anode terminal b) near the cathode terminal
c) in between the anode & cathode terminal
d) none of the above mentioned
6. The static V-I curve for the SCR is plotted for
a) Ia (anode current) vs Ig (gate current), Va (anode cathode voltage) as a parameter
b) Ia vs Va with Ig as a parameter
c) Va vs Ig with Ia as a parameter
d) Ig vs Vg with Ia as a parameter
7. If the cathode of an SCR is made positive with respect to the anode & no gate current is applied then
a) all the junctions are reversed biased
b) all the junctions are forward biased
c) only the middle junction is forward biased
d) only the middle junction is reversed biased
8. For an SCR in the reverse blocking mode, (practically)
a) leakage current does not flow
b) leakage current flows from anode to cathode
c) leakage current flows from cathode to anode
d) leakage current flows from gate to anode
9. With the anode positive with respect to the cathode & the gate circuit open, the SCR is said to be in the
a) reverse blocking mode b) reverse conduction mode c) forward blocking mode
d) forward conduction mode

10. For an SCR in the forward blocking mode (practically)

a) leakage current does not flow
b) leakage current flows from anode to cathode
 c) leakage current flows from cathode to anode
d) leakage current flows from gate to anode
11.Which of the following terminals does not belong to the MOSFET?
a) Drain b) Gate c) Base d) Source
12. Choose the correct statement
a) MOSFET is a uncontrolled device b) MOSFET is a voltage controlled device
c) MOSFET is a current controlled device d) MOSFET is a temperature controlled device
13. Choose the correct statement
a) MOSFET is a unipolar, voltage controlled, two terminal device
b) MOSFET is a bipolar, current controlled, three terminal device
c) MOSFET is a unipolar, voltage controlled, three terminal device
d) MOSFET is a bipolar, current controlled, two terminal device
14. the controlling parameter in MOSFET is
a) Vds b) Ig c) Vgs d) Is
15. The three terminals of the IGBT are
a) base, emitter & collector
b) gate, source & drain
c) gate, emitter & collector
d) base, source & drain
16. In IGBT, the p+ layer connected to the collector terminal is called as the
a) drift layer b) injection layer c) body layer d) collector Layer
17. In IGBT, the n layer above the p+ layer is called as the
a) drift layer b) injection layer c) body layer d) collector Layer
18. The turn-off gain off of the GTO is given by
a) Ig/Ia b) Ia/Ig c) Vg/Va d) Vg/Va
19. AC voltage controllers convert
a) fixed ac to fixed dc b) variable ac to variable dc c) fixed ac to variable ac
d) variable ac to fixed ac
20. High frequency gating uses a
a) train of pulses b) continuous gating block c) carrier signal
d) none of the above

SET-C
1. A single phase voltage controller has input of 230 V and a load of 15 resistive. For 6 cycles on
and 4 cycles off, determine the rms output voltage.
a) 189 V b) 260 V c) 156 V d) 178 V
2. Pulse gating is suitable for
a) R loads only b) R and RL loads c) RL loads only d) all types of loads
3. In continues gating
a) overlap angle is very high
b) SCR is heated up
c) size of the pulse transformer is small
d) commutation cannot be achieved effectively
4. In the integral cycle control method of ac voltage controller
a) the average power delivered to the load is controlled
b) the instantaneous power delivered to the load is controlled
c) the frequency of output voltage is controlled
d) none of the mentioned
 5. The below given output voltage waveform can be obtained by a

a) half wave ac voltage controller

b) full wave ac voltage controller
c) half wave controller with firing angle = 0 for T1
d) full wave controller with firing angle = 0 for both T1 and T2
6. for half wave ac voltage controller average output vltage
a) (Vm/2) (cos +1 ) b) (Vm/2) (cos) c) (Vm/2) (cos 1) d) Vm
7. In the integral cycle control of ac voltage controller, is the load is on for n cycles and off for m
cycles, then the periodicity is given by? Consider the output is sinusoidal.
a) m/2(m+n) b) n/2(m+n) c) m/(m+n) d) n/(m+n)
8. In the integral cycle control method with duty cycle = k and maximum load current = Im. Find
the value of average SCR current.
a) Im/k. b) Im c) k.Im d) k.Im/
9. With the anode positive with respect to the cathode & the gate circuit open, the SCR is said to be in
the
a) reverse blocking mode b) reverse conduction mode c) forward blocking mode
d) forward conduction mode
10. For an SCR in the forward blocking mode (practically)
a) leakage current does not flow
b) leakage current flows from anode to cathode
c) leakage current flows from cathode to anode
d) leakage current flows from gate to anode
11.Which of the following terminals does not belong to the MOSFET?
a) Drain b) Gate c) Base d) Source
12. Choose the correct statement
a) MOSFET is a uncontrolled device b) MOSFET is a voltage controlled device
c) MOSFET is a current controlled device d) MOSFET is a temperature controlled device
13. Choose the correct statement
a) MOSFET is a unipolar, voltage controlled, two terminal device
b) MOSFET is a bipolar, current controlled, three terminal device
c) MOSFET is a unipolar, voltage controlled, three terminal device
d) MOSFET is a bipolar, current controlled, two terminal device
14. An ideal power diode must have
a) low forward current carrying capacity b) large reverse breakdown voltage
c) high ohmic junction resistance d) high reverse recovery time
15. Power diode is __________
a) a three terminal semiconductor device
b) a two terminal semiconductor device
c) a four terminal semiconductor device
d) a three terminal analog device
16. the V-I Characteristics of the diode lie in the
a) 1st & 2nd quadrant b) 1st & 3rd quadrant c) 1st & 4th quadrant
d) Only in the 1st quadrant
17. A diode is said to be reversed biased when the
a) cathode is positive with respect to the anode b) anode is positive with respect to the cathode
c) cathode is negative with respect to the anode d) both cathode & anode are negative
18. The thyristor turn-off requires that the anode current
a) falls below the holding current b) falls below the latching current
c) rises above the holding current d) rises above the latching current
19. In case of class A type commutation or load commutation with low value of R load the
a) L is connected across R b) L-C is connected across R
c) L is connected in series with R d) L-C is connected in series with R
20. The class A commutation or load commutation is possible in case of
a) dc circuits only b) ac circuits only c) both DC and AC circuits
d) none of the above mentioned
.
SET-D
1. The thyristor turn-off requires that the anode current
a) falls below the holding current b) falls below the latching current
c) rises above the holding current d) rises above the latching current
2. In case of class A type commutation or load commutation with low value of R load the
a) L is connected across R b) L-C is connected across R
c) L is connected in series with R d) L-C is connected in series with R
3. The class A commutation or load commutation is possible in case of
a) dc circuits only b) ac circuits only
c) both DC and AC circuits d) none of the above mentioned
4. In case of class B commutation or resonant-pulse commutation with L = 5 H and C = 20 C with
initial voltage across the capacitor (Vs) = 230 V. Find the peak value of resonant current.
a) 560 A b) 460 A c) 360 A d) 260 A
5. In case of class B commutation or resonant-pulse commutation with L = 5 H and C = 20 C with
the initial voltage across the capacitor (Vs) = 230 V. Find the conduction time for auxiliary
thyristor.
a) 0.23 s b) 6.57 s c) 31.41 s d) 56 s
6. An SCR is connected in series with L = 5 mH and C = 20 F. Find the resonant frequency of the
circuit.
a) 2569 rad/s b) 3162 rad/s c) 2400 rad/s d) 7889 rad/s
7. The type of commutation when the load is commutated by transferring its load current to
another incoming thyristor is
a) class A or load commutation b) class B or resonant commutation
c) class C or complementary commutation d) class D or impulse commutation
8. The type of commutation in which the pulse to turn off the SCR is obtained by separate voltage
source is
a) class B commutation b) class C commutation c) class D commutation
d) class E commutation
9. The natural reversal of ac supply voltage commutates the SCR in case of
a) forced commutation b) only line commutation
c) only natural commutation d) both line & natural commutation
10. For an SCR the total turn-on time consists of
i) Delay time ii) Rise time and iii) Spread time
During the delay time the
a) anode current flows only near the gate b) anode current rises from zero to very high value
c) losses are maximum d) anode to cathode voltage is zero
11. Which of the following devices does not belong to the transistor family?
a) IGBT b) MOSFET c) GTO d) BJT
12. A power transistor is a
a) three layer, three junction device b) three layer, two junction device
c) two layer, one junction device d) four layer, three junction device
13. The forward current gain is given by
a) IC/IB b) IC/IE c) IE/IC d) IE/IB
14. A power transistor is a _________ device.
a) two terminal, bipolar, voltage controlled
b) two terminal, unipolar, current controlled
c) three terminal, unipolar, voltage controlled
d) three terminal, bipolar, current controlled
15. The value of is given by the expression
a) IC/IB b) IC/IE c) IE/IC d) IE/IB
16. A power BJT is used as a power control switch by biasing it in the cut off region (off state) or in
the saturation region (on state). In the on state
a) both the base-emitter & base-collector junctions are forward biased
b) the base-emitter junction is reverse biased, and the base collector junction is forward biased
c) the base-emitter junction is forward biased, and the base collector junction is reversed biased
d) both the base-collector & the base-emitter junctions are reversed biased
17. Which of the following terminals does not belong to the MOSFET?
a) Drain b) Gate c) Base d) Source
18. Choose the correct statement
a) MOSFET is a uncontrolled device b) MOSFET is a voltage controlled device
c) MOSFET is a current controlled device d) MOSFET is a temperature controlled device
19. An SCR has half cycle surge current rating of 3000 A for 50 Hz. Calculate its one-cycle surge
current rating
a) 3121.32 A b) 2121.32 A c) 3131.32 A d) 2131.32 A
20. In IGBT, the p+ layer connected to the collector terminal is called as the
a) drift layer b) injection layer c) body layer d) collector Layer