Electrical and Telecommunications Engineering Technology_EET1240ET212

NEW YORK CITY COLLEGE OF TECHNOLOGY

The City University of New York

DEPARTMENT: Electrical and Telecommunications

Engineering Technology

SUBJECT CODE EET1240/ET212

AND TITLE: Electronics

COURSE DESCRIPTION: Characteristics and applications of semiconductor elements

such as diodes, bipolar junction transistors and field effect
transistors are covered. Applications include dc power
supplies, voltage regulators, small signal amplifiers (single
and multi-stage), operational amplifiers, negative feedback,
and frequency response.

PRE -COREQUISITE: EET1222/ET242

TEXTBOOK: Electronics Devices
By Thomas L. Floyd, Eighth Edition, 2008 Prentice Hall

COURSE OBJECTIVES/ Upon completion of this course, students will be able to:
STUDENTS OUTCOMES 1. Describe characteristics of diode, transistors, and
semiconductor amplifiers (ABET criteria 3a).
2. Apply knowledge of diode, transistors, and
semiconductor amplifiers in various applications such as
clipping and clamping of signals, full-wave rectifier,
common emitter, common collector, and common base
amplifiers (ABET criteria 3b).
3. Design circuit utilizing components such as diode,
transistors, and semiconductor amplifiers (ABET Criteria-
PC.a).
4. Analyze circuit involving diode, transistors, and
semiconductor amplifiers (ABET criteria 3e, PC.a).

TOPICS: Topics include semiconductor diodes characteristics, diode

clipping and clamping circuits, zener diode regulators and
applications. Characteristics of bipolar junction transistors
and field effect transistors. Analysis and design of
semiconductor amplifiers.
CLASS HOURS: 4
CREDITS: 4
Prepared by: Professor H. Marandi
January 2013
Course Coordinator: Professor M. Kouar
Email: mkouar@citytech.cuny.edu
Electrical and Telecommunications Engineering Technology_EET1240ET212

GRADING POLICY: EET 1240/ET 212

Homework and class participation 10%

Exams 60%
Final Examination 30%

Letter Grade Numerical Grade Ranges Quality

A 93-100 4.0
A- 90-92.9 3.7
B+ 87-89.9 3.3
B 83-86.9 3.0
B- 80.82.9 2.7
C+ 77-79.9 2.3
C 70-76.9 2.0
D 60-69.9 1.0
F 59.9 and below 0.0
Electrical and Telecommunications Engineering Technology_EET1240ET212
Assessment
The following assessment techniques are
Correlated to the course objectives as
follows: In addition, each assessment
technique incorporates one or more of
the following ABET Criteria 3 outcomes
(ABET Criteria 3a, 3b, 3e, PC.a)
Course Objectives
1. Describe characteristics of diode,
transistors, and semiconductor
amplifiers.
2. Apply knowledge of diode, transistors
and semiconductor amplifiers in various
applications such as clipping and
clamping of signals, full-wave rectifier,
common emitter, common collector, and
common base amplifiers.
3. Design circuit utilizing components
such as diode, transistors, semiconductor
amplifiers.
4. Analyze circuit involving diode,
transistors, and semiconductor
amplifiers.
Assessment
1.1 Explain the characteristics of diode.
1.2 Explain the characteristics of
transistors.
1.3 Explain the characteristics and of
amplifiers.
2.1 Explain the operation and application
of diode in clipping and clamping of
signals, half and full-wave rectifiers.
2.2 Explain the operation and application
of transistors in various
configurations:
common emitter, common collector,
common base amplifiers.
2.3 Explain the operation and application
of operational amplifiers.
3.1 Design voltage regulators.
3.2 Design transistor amplifiers to
achieve desired current, voltage gain.
3.3 Design amplifier circuit to achieve
high and low frequency response.
4.1 Analyze diode voltage regulators.
4.2. Analyze common emitter, common
collector, common base amplifier
circuits
4.3 Analyze multistage amplifier
operation.
4.4 Analyze the frequency response of
amplifier.
 Electrical and Telecommunications Engineering Technology_EET1240ET212

WEEK TOPIC READING HOMEWORK

ASSIGNMENT
1. Introduction to Electronics. Semiconductor Chapter 1 1, 3, 5, 7, 9, 11,
Physics. The PN junction. Biasing the PN Pages 1-33 13, 15, 17, 19
junction. The diode.

2. Diode applications. Half-wave and full-wave Chapter 2 1-11

rectifiers. Power supply filters. Pages 45-65

3. Clipping and clamping circuits. The diode Chapter 2: 12, 14, 24-26
data sheet. Pages 65-78

4. Zener diode and Applications. Zener Chapter 3 6, 7, 8, 10, 12,

regulation. Pages 106-121 13

Exam I
5 Bipolar Junction Transistors (BJTs). Chapter 4: 1, 6,7, 9, 12,
Transistors characteristics and parameters. Pages163-179 15, 18, 20, 22
Basic transistor operation.

6 Transistor as an amplifier. Transistor as a Chapter 4 24, 26, 29

switch. Pgs. 180-185

7 Transistor Bias Circuits BJT. Small signal Chapter 5 Chapter5

Analysis. Pages 216-236 2-5, 9, 10, 20,
Chapter 6 24
Pages 256-263

8 Common-Emitter Amplifiers. Chapter 6 7, 13, 18, 19

Pages 263-276
Exam II

9 Common-Collector amplifiers. Common- Chapter 6 20, 24, 27, 30,

Base amplifiers. Multistage amplifiers. Pages 276-289 32
 Electrical and Telecommunications Engineering Technology_EET1240ET212

WEEK TOPIC READING HOMEWORK

ASSIGNMENT
10 General concepts of amplifiers frequency Chapter 10 2, 5, 6, 9, 10,
response. The Decibel. Low-frequency Pages 492-508 13, 16
amplifier response.

11 High-frequency amplifier response. Chapter 10 Chapter 10

Pages 517-522 19, 22

Operational amplifiers (OP AMPs). The Chapter 12 Chapter 12

differential amplifier. Pages 592-601 3, 5, 6, 10

12 Negative feedback. Op-Amp Chapter 12 14, 16, 17, 18,

configurations with negative feedback. Pages 602-608 19, 20

13 Junction Field Effect Transistors (JFETs) Chapter 8 1, 2, 3, 4, 5, 6,

Pages 368-380 7
Exam III
14 FET Biasing Chapter 8 16, 17, 20, 26,
Metal Oxide semiconductor FETs Pages 381-409 28, 34, 35, 37
(MOSFETs).

15 Final Exam

New York City College of Technology Policy on Academic Integrity

Students and all others who work with information, ideas, texts, images, music,
inventions, and other intellectual property owe their audience and sources accuracy and
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information literacy and academic integrity, offering models of good practice, and
responding vigilantly and appropriately to infractions of academic integrity. Accordingly,
academic dishonesty is prohibited in the City University of New York and at New York
City College of Technology and is punishable by penalties, including failing grades,
suspension, and expulsion. The complete text of the College policy on the Academic
Integrity may be found in the catalog.