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Ordering number : ENN7502
2SK3702
N-Channel Silicon MOSFET

2SK3702

DC / DC Converter Applications

Features Package Dimensions


Low ON-resistance. unit : mm
Ultrahigh-speed switching. 2063A
4V drive. [2SK3702]
4.5
10.0 2.8
3.2

3.5
7.2
16.0
18.1
2.4

5.6
1.6
1.2

14.0
0.7
0.75

1 2 3
1 : Gate
2.55 2.55 2 : Drain

2.4
3 : Source
Specifications
2.55 2.55 SANYO : TO-220ML
Absolute Maximum Ratings at Ta=25C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 60 V
w w w . D a t a S h e e t . c o . k r

Gate-to-Source Voltage VGSS 20 V


Drain Current (DC) ID 18 A
Drain Current (Pulse) IDP PW10s, duty cycle1% 72 A
2.0 W
Allowable Power Dissipation PD
Tc=25C 20 W
Channel Temperature Tch 150 C
Storage Temperature Tstg --55 to +150 C

Electrical Characteristics at Ta=25C


Ratings
Parameter Symbol Conditions Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0 60 V
Zero-Gate Voltage Drain Current IDSS VDS=60V, VGS=0 1 A
Gate-to-Source Leakage Current IGSS VGS= 16V, VDS=0 10 A
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.2 2.6 V
Forward Transfer Admittance yfs VDS=10V, ID=9A 8 12 S
Marking : K3702 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company


TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71003 TS IM TA-100558 No.7502-1/4

D a t a s h e e t p d f - h t t p :
2SK3702

Continued from preceding page.


Ratings
Parameter Symbol Conditions Unit
min typ max
RDS(on)1 ID=9A, VGS=10V 42 55 m
Static Drain-to-Source On-State Resistance
RDS(on)2 ID=9A, VGS=4V 60 85 m
Input Capacitance Ciss VDS=20V, f=1MHz 775 pF
Output Capacitance Coss VDS=20V, f=1MHz 125 pF
Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 105 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns
Rise Time tr See specified Test Circuit. 65 ns
Turn-OFF Delay Time td(off) See specified Test Circuit. 75 ns
Fall Time tf See specified Test Circuit. 70 ns
Total Gate Charge Qg VDS=30V, VGS=10V, ID=18A 19 nC
Gate-to-Source Charge Qgs VDS=30V, VGS=10V, ID=18A 2.5 nC
Gate-to-Drain Miller Charge Qgd VDS=30V, VGS=10V, ID=18A 4.1 nC
Diode Forward Voltage VSD IS=18A, VGS=0 0.98 1.2 V

Switching Time Test Circuit


VIN VDD=30V
10V
0V
ID=9A
VIN RL=3.33
D VOUT
PW=10s
D.C.1%
G

2SK3702
P.G 50 S

www.DataSheet.co.kr

ID -- VDS ID -- VGS
40 30
Tc=25C VDS=10V
C
V

--25
6V
10

35
75

25
8V

Tc=

30
Drain Current, ID -- A

Drain Current, ID -- A

C
25

20
25
4V
20 15

15
10

10
C

VGS=3V 5
25
C

5
C
5
=7

5
Tc

--2

0 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1 2 3 4 5 6
Drain-to-Source Voltage, VDS -- V IT06197 Gate-to-Source Voltage, VGS -- V IT06198

No.7502-2/4

Datasheet pdf - http://www.DataSheet4U.net/


2SK3702
RDS(on) -- VGS RDS(on) -- Tc
140 140
On-State Resistance, RDS(on) -- m ID=9A

On-State Resistance, RDS(on) -- m


120 120

100 100

80 80 =4V
Static Drain-to-Source

Static Drain-to-Source
, V GS
9A
Tc= 75C I D=
60 60 =10V
9 A , VGS
25C I D=
40 40
--25C

20 20

0 0
2 3 4 5 6 7 8 9 10 --50 --25 0 25 50 75 100 125 150
Gate-to-Source Voltage, VGS -- V IT06199 Case Temperature, Tc -- C IT06200
VGS(off) -- Tc yfs -- ID
2.5 5
VDS=10V VDS=10V

Forward Transfer Admittance, yfs -- S


ID=1mA 3
Cutoff Voltage, VGS(off) -- V

2.0
2

25
C

1.5 10
-2 5C
=-
7 Tc
75
C
1.0 5

0.5 2

0 1.0
--50 --25 0 25 50 75 100 125 150 2 3 5 7 1.0 2 3 5 7 10 2 3
Case Temperature, Tc -- C IT06201 Drain Current, ID -- A IT06202
IF -- VSD www.DataSheet.co.kr SW Time -- ID
100 1000
7 VGS=0 7
VDD=30V
5
VGS=10V
3 5
Switching Time, SW Time -- ns

2
3
Forward Current, IF -- A

10
7 2
5
3
2 100 td(off)
1.0 7
7 tf
75C

5 5
25C
--25C

3
Tc=

2 3
tr
0.1 2
7
5 td(on)
3 10
2 7
0.01 5
0 0.3 0.6 0.9 1.2 1.5 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100
Diode Forward Voltage, VSD -- V IT06203 Drain Current, ID -- A IT06204
Ciss, Coss, Crss -- VDS VGS -- Qg
3 10
f=1MHz VDS=30V
2 9 ID=18A
Gate-to-Source Voltage, VGS -- V

8
1000
Ciss, Coss, Crss -- pF

Ciss 7
7
6
5
5
3
4
2
Coss 3

2
100 Crss
7 1

5 0
0 5 10 15 20 25 30 0 5 10 15 20
Drain-to-Source Voltage, VDS -- V IT06205 Total Gate Charge, Qg -- nC IT06206

No.7502-3/4

Datasheet pdf - http://www.DataSheet4U.net/


2SK3702
ASO PD -- Ta
2 2.5

100 IDP=72A <10s

Allowable Power Dissipation, PD -- W


7 10
5
s
10 2.0
3 0
ID=18A s
Drain Current, ID -- A

2 1m
10 s
10 1.5
10 ms
7
5
0m
DC s
3 op
2 era 1.0
Operation in this area tio
is limited by RDS(on). n
1.0
7
5 0.5
3
2 Tc=25C
Single pulse 0
0.1
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 0 20 40 60 80 100 120 140 160
Drain-to-Source Voltage, VDS -- V IT06207 Ambient Tamperature, Ta -- C IT06208
PD -- Tc
25
Allowable Power Dissipation, PD -- W

20

15

10

0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- C IT06209
www.DataSheet.co.kr

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of July, 2003. Specifications and information herein are subject
to change without notice.

PS No.7502-4/4

Datasheet pdf - http://www.DataSheet4U.net/

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