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1
The needed doping is now
2 1020 = 6:74 1016 cm;3
Nd = Na = np i = 3:332:25
103 cm;3
n
The built-in voltage is then given by
N
Vbi = 0:026ln p d = 0:8 V
n
The maximum eld in the depletion region for this diode with equal n- and
p- dopings is 1=2
Fm = eN d (VeNbi ; V )
d
This gives r
3 105V=cm = eNd(Vbi ; V )
Taking the square of both sides
1010 V=cm)(11:9 8:84 10;14 F=cm) = 8:78 V
Vbi ; V = (9 (1:6 10;19C )(6:74 1016cm;3 )
This gives
;V = 8:78 ; 0:8 8 V olts
The diode can operate upto 8 volt reverse bias.
Problem 2: (6 points)
Consider a short (or narrow) p+ -n diode. Assume that the reverse current is
dominated by generation-recombination current (i.e the non-ideal current) and
at turn-on the forward current is dominated by ideal diode current.
The reverse current density at a total bias (built-in plus reverse bias) of 5
volt is to be 10;6 A/cm2 .
Calculate the n-side doping of the diode.
Calculate the turn-on voltage of the diode (forward current density is 1000
A/cm2 .
2
In this problem we will need to make two approxiamtions: (i) The p-side
doping is much larger than n-side doping; (ii) the depletion width in forward
bias is small compared to the width of the n-side. The second approximation
can be easily veried for the diode after the rst part is solved.
Since we know that the reverse current is dominated by the G-R term we
have
J0 (G ; R) = eWn i ;6
2 = 10 A=cm
2
where W is the depletion width and is the lifetime in the depletion region.
This gives us
;6A=cm2 )(2 10;7s)
W = (1:6(10 10;19C )(1:5 1010cm;3 )
= 0:833m
Equating this to the depletion width at Vbi + jVr j = 5:0 V we get (using
Na >> Nd ) s
W = 2(5V )eNd