IGBT

IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage

IKD03N60RF
TRENCHSTOPTMRC-Seriesforhardswitchingapplicationsupto30kHz

Datasheet

IndustrialPowerControl
 IKD03N60RF
TRENCHSTOPTMRC-DrivesFastSeries

IGBTwithintegrateddiodeinpackagesofferingspacesavingadvantage

Features: C

TRENCHSTOPTMReverseConducting(RC)technologyfor600V
applicationsoffering

OptimizedEon,EoffandQrrforlowswitchinglosses
Operatingrangeof4to30kHz G
SmoothswitchingperformanceleadingtolowEMIlevels E
Verytightparameterdistribution
Maximumjunctiontemperature175C
Shortcircuitcapabilityof5s C
Bestinclasscurrentversuspackagesizeperformance
QualifiedaccordingtoJEDECfortargetapplications
Pb-freeleadplating;RoHScompliant(soldertemperature
260C,MSL1)

CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/

Applications: G

Domesticandindustrialdrives:
E

Compressors
Pumps
Fans

KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25C Tvjmax Marking Package
IKD03N60RF 600V 2.5A 2.2V 175C K03R60F PG-TO252-3

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TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17

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MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value Unit

Collector-emittervoltage,Tvj25C VCE 600 V
DCcollectorcurrent,limitedbyTvjmax
TC=25Cvaluelimitedbybondwire IC 6.5 A
TC=100C 6.0
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 7.5 A
Turn off safe operating area
- 7.5 A
VCE600V,Tvj175C,tp=1s
Diodeforwardcurrent,limitedbyTvjmax
TC=25C IF 6.3 A
TC=100C 3.9
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 7.5 A
Gate-emitter voltage VGE 20 V
Short circuit withstand time
VGE=15.0V,VCC400V
Allowed number of short circuits < 1000 tSC s
Time between short circuits: 1.0s
Tvj=150C 5
PowerdissipationTC=25C Ptot 53.6 W
Operating junction temperature Tvj -40...+175 C
Storage temperature Tstg -55...+150 C
Soldering temperature,
C
reflow soldering (MSL1 according to JEDEC J-STA-020) 260

ThermalResistance
Value
Parameter Symbol Conditions Unit
min. typ. max.
RthCharacteristics
IGBT thermal resistance,1)
Rth(j-c) - - 2.80 K/W
junction - case
Diode thermal resistance,2)
Rth(j-c) - - 6.80 K/W
junction - case
Thermal resistance, min. footprint
Rth(j-a) - - 75 K/W
junction - ambient
Thermal resistance, 6cm Cu on
PCB Rth(j-a) - - 50 K/W
junction - ambient

1)
Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the IGBT, is not possible using a thermocouple.
2)
Rth/Zth based on single cooling pulse. Please be aware that a correct Rth measurement of the Diode, is not possible using a thermocouple.

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ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 600 - - V
VGE=15.0V,IC=2.5A
Collector-emitter saturation voltage VCEsat Tvj=25C - 2.20 2.50 V
Tvj=175C - 2.30 -
VGE=0V,IF=2.5A
Diode forward voltage VF Tvj=25C - 2.10 2.40 V
Tvj=175C - 2.00 -
Gate-emitter threshold voltage VGE(th) IC=0.05mA,VCE=VGE 4.3 5.0 5.7 V
VCE=600V,VGE=0V
Zero gate voltage collector current1) ICES Tvj=25C - - 40 A
Tvj=175C - - 1000
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=2.5A - 1.3 - S
Integrated gate resistor rG none

ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 200 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 13 - pF
Reverse transfer capacitance Cres - 7 -
VCC=480V,IC=2.5A,
Gate charge QG - 17.1 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 7.0 - nH
case
Short circuit collector current VGE=15.0V,VCC400V,
Max. 1000 short circuits IC(SC) tSC5s - - A
23
Time between short circuits: 1.0s Tvj=25C

1)
Not subject to production test - verified by design/characterization

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SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25C
Turn-on delay time td(on) Tvj=25C, - 10 - ns
Rise time tr VCC=400V,IC=2.5A, - 8 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=68.0,RG(off)=68.0, - 128 - ns
Fall time tf L=60nH,C=40pF - 93 - ns
L,CfromFig.E
Turn-on energy Eon - 0.05 - mJ
Turn-off energy Eoff - 0.04 - mJ
Total switching energy Ets - 0.09 - mJ

DiodeCharacteristic,atTvj=25C
Diode reverse recovery time trr Tvj=25C, - 31 - ns
Diode reverse recovery charge Qrr VR=400V, - 0.06 - C
IF=2.5A,
Diode peak reverse recovery current Irrm diF/dt=470A/s - 3.8 - A
Diode peak rate of fall of reverse
dirr/dt - -196 - A/s
recoverycurrentduringtb

SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=175C
Turn-on delay time td(on) Tvj=175C, - 9 - ns
Rise time tr VCC=400V,IC=2.5A, - 9 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=68.0,RG(off)=68.0, - 142 - ns
Fall time tf L=60nH,C=40pF - 123 - ns
L,CfromFig.E
Turn-on energy Eon - 0.08 - mJ
Turn-off energy Eoff - 0.06 - mJ
Total switching energy Ets - 0.14 - mJ

DiodeCharacteristic,atTvj=175C
Diode reverse recovery time trr Tvj=175C, - 66 - ns
Diode reverse recovery charge Qrr VR=400V, - 0.19 - C
IF=2.5A,
Diode peak reverse recovery current Irrm diF/dt=470A/s - 6.2 - A
Diode peak rate of fall of reverse
dirr/dt - -125 - A/s
recoverycurrentduringtb

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2.5 10

2.0
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
1.5
not for linear use
Ta=55C
1

1.0

0.5

0.0 0.1
0.1 1 10 100 1 10 100 1000
f,SWITCHINGFREQUENCY[kHz] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching Figure 2. Forwardbiassafeoperatingarea
frequency (D=0,TC=25C,Tvj175C;VGE=15V)
(Tvj175C,Ta=55C,D=0.5,VCE=400V,
VGE=0/15V,RG=68,PCBmounting,6cm2
Cu, Ptot=2,4W)

60 7

6
50
limited by bond wire
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]

5
40

30

20
2

10
1

0 0
25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
TC,CASETEMPERATURE[C] TC,CASETEMPERATURE[C]
Figure 3. Powerdissipationasafunctionofcase Figure 4. Collectorcurrentasafunctionofcase
temperature temperature
(Tvj175C) (VGE15V,Tvj175C)

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9 9

VGE = 20V VGE = 20V

8 8
17V 17V

7 15V 7 15V
IC,COLLECTORCURRENT[A]

IC,COLLECTORCURRENT[A]
13V 13V
6 6
11V 11V

5 9V 5 9V

7V 7V
4 4

3 3

2 2

1 1

0 0
0 1 2 3 4 0 1 2 3 4
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic Figure 6. Typicaloutputcharacteristic
(Tvj=25C) (Tvj=175C)

9 4.0
Tvj = 25C IC = 0.6A
Tvj = 175C IC = 1A
8 3.5 IC = 2.5A
VCEsat,COLLECTOR-EMITTERSATURATION[V]

IC = 5A

7
3.0
IC,COLLECTORCURRENT[A]

6
2.5

5
2.0
4

1.5
3

1.0
2

1 0.5

0 0.0
4 6 8 10 12 14 0 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tvj,JUNCTIONTEMPERATURE[C]
Figure 7. Typicaltransfercharacteristic Figure 8. Typicalcollector-emittersaturationvoltageas
(VCE=10V) afunctionofjunctiontemperature
(VGE=15V)

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td(off)
tf
td(on)
tr

100
100
t,SWITCHINGTIMES[ns]

t,SWITCHINGTIMES[ns]
td(off)
tf
td(on)
tr

10 10

1 1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 20 30 40 50 60 70 80 90 100 110 120
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistance
(inductiveload,Tvj=175C,VCE=400V, (inductiveload,Tvj=175C,VCE=400V,
VGE=0/15V,RGon=68,RGoff=68,dynamic VGE=0/15V,IC=2,5A,dynamictestcircuitin
test circuit in Figure E) Figure E)

7
td(off) typ.
tf min.
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]

td(on) max.
tr 6

100
t,SWITCHINGTIMES[ns]

10
3

1 1
25 50 75 100 125 150 175 25 50 75 100 125 150 175
Tvj,JUNCTIONTEMPERATURE[C] Tvj,JUNCTIONTEMPERATURE[C]
Figure 11. Typicalswitchingtimesasafunctionof Figure 12. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V, (IC=0,05mA)
IC=2,5A,RGon=68,RGoff=68,dynamictest
circuit in Figure E)
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0.25 0.20
Eoff Eoff
Eon Eon
0.18
Ets Ets
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]
0.20 0.16

0.14

0.15 0.12

0.10

0.10 0.08

0.06

0.05 0.04

0.02

0.00 0.00
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10 20 30 40 50 60 70 80 90 100 110 120
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistance
(inductiveload,Tvj=175C,VCE=400V, (inductiveload,Tvj=175C,VCE=400V,
VGE=0/15V,RGon=68,RGoff=68,dynamic VGE=0/15V,IC=2,5A,dynamictestcircuitin
test circuit in Figure E) Figure E)

0.16 0.18
Eoff Eoff
Eon Eon
0.14 Ets 0.16 Ets
E,SWITCHINGENERGYLOSSES[mJ]

E,SWITCHINGENERGYLOSSES[mJ]

0.14
0.12

0.12
0.10

0.10
0.08
0.08

0.06
0.06

0.04
0.04

0.02 0.02

0.00 0.00
25 50 75 100 125 150 175 200 250 300 350 400 450 500
Tvj,JUNCTIONTEMPERATURE[C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalswitchingenergylossesasa Figure 16. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(inductiveload,VCE=400V,VGE=0/15V, (inductiveload,Tvj=175C,VGE=0/15V,
IC=2,5A,RGon=68,RGoff=68,dynamictest IC=2,5A,RGon=68,RGoff=68,dynamictest
circuit in Figure E) circuit in Figure E)
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18 1000
VCC=120V Cies
VCC=480V Coes
16 Cres

14
VGE,GATE-EMITTERVOLTAGE[V]

C,CAPACITANCE[pF]
12 100

10

6 10

0 1
0 2 4 6 8 10 12 14 16 18 0 5 10 15 20 25 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge Figure 18. Typicalcapacitanceasafunctionof
(IC=2,5A) collector-emittervoltage
(VGE=0V,f=1MHz)

50 12
IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A]

45
tSC,SHORTCIRCUITWITHSTANDTIME[s]

10
40

35
8

30

25 6

20

4
15

10
2

0 0
12 13 14 15 16 17 18 19 20 10 11 12 13 14 15 16 17 18 19
VGE,GATE-EMITTERVOLTAGE[V] VGE,GATE-EMITTERVOLTAGE[V]
Figure 19. Typicalshortcircuitcollectorcurrentasa Figure 20. Shortcircuitwithstandtimeasafunctionof
functionofgate-emittervoltage gate-emittervoltage
(VCE400V,startatTvj=25C) (VCE400V,startatTvj=150C)

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Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]

Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
1

D = 0.5 D = 0.5
0.2 1 0.2
0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
0.1 single pulse single pulse
0.1

i: 1 2 3 4 5 6 7 i: 1 2 3 4 5 6 7
ri[K/W]: 0.015751 1.14785 1.341315 0.237182 0.041914 6.2E-3 2.2E-3 ri[K/W]: 0.600659 4.018125 1.846211 0.289559 0.043754 6.0E-3 2.1E-3
i[s]: 1.2E-5 2.3E-4 1.1E-3 6.0E-3 0.047561 0.288161 1.246755 i[s]: 4.2E-5 1.9E-4 1.1E-3 6.1E-3 0.048469 0.301349 1.300555

0.01 0.01
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 21. IGBTtransientthermalimpedanceasa Figure 22. Diodetransientthermalimpedanceasa
functionofpulsewidth1)(seepage4) functionofpulsewidth2)(seepage4)
(D=tp/T) (D=tp/T)

80 0.20
Tvj = 25C, IF = 2.5A
Tvj = 175C, IF = 2.5A
0.18
70
Qrr,REVERSERECOVERYCHARGE[C]

0.16
trr,REVERSERECOVERYTIME[ns]

60
0.14
Tvj = 25C, IF = 2.5A
50 Tvj = 175C, IF = 2.5A
0.12

40 0.10

0.08
30

0.06
20
0.04

10
0.02

0 0.00
400 500 600 700 800 900 1000 400 500 600 700 800 900 1000
diF/dt,DIODECURRENTSLOPE[A/s] diF/dt,DIODECURRENTSLOPE[A/s]
Figure 23. Typicalreverserecoverytimeasafunction Figure 24. Typicalreverserecoverychargeasa
ofdiodecurrentslope functionofdiodecurrentslope
(VR=400V) (VR=400V)

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10 0
Tvj = 25C, IF = 2.5A Tvj = 25C, IF = 2.5A
Tvj = 175C, IF = 2.5A Tvj = 175C, IF = 2.5A
9

dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/s]
-100
Irr,REVERSERECOVERYCURRENT[A]

-200
7

6 -300

5
-400

-500
3

2 -600
400 500 600 700 800 900 1000 400 500 600 700 800 900 1000
diF/dt,DIODECURRENTSLOPE[A/s] diF/dt,DIODECURRENTSLOPE[A/s]
Figure 25. Typicalreverserecoverycurrentasa Figure 26. Typicaldiodepeakrateoffallofreverse
functionofdiodecurrentslope recoverycurrentasafunctionofdiode
(VR=400V) currentslope
(VR=400V)

9 2.8
Tvj = 25C, VGE = 0V
Tvj = 175C, VGE = 0V
8 2.6

7 2.4 IF = 0.6A
IF = 1A
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]

IF = 2.5A
6 2.2 IF = 5A

5 2.0

4 1.8

3 1.6

2 1.4

1 1.2

0 1.0
0 1 2 3 4 0 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tvj,JUNCTIONTEMPERATURE[C]
Figure 27. Typicaldiodeforwardcurrentasafunction Figure 28. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature

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Package Drawing PG-TO252-3

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Testing Conditions

VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b

a b
10% VGE
t

IC(t) Qa Qb

dI

90% IC
90% IC

10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)

td(off) tf td(on) tr
t

Figure A.
VGE(t)
90% VGE
Figure D.

10% VGE
t

IC(t)

CC

2% IC
t

VCE(t) Figure E. Dynamic test circuit

Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
t2 t4
(only for ZVT switching)
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCE
t
t1 t2 t3 t4

Figure B.

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RevisionHistory
IKD03N60RF

Revision:2016-05-10,Rev.2.6
Previous Revision
Revision Date Subjects (major changes since last revision)
1.1 2011-06-07 Preliminary Data sheet
2.2 2012-02-23 Final data sheet
2.3 2013-12-10 New value ICES max limit at 175C
2.4 2014-02-26 Without PB free logo
2.5 2014-03-12 Storage temperature -55...+150C
2.6 2016-05-10 New maximum values Ic(Tc), IF(Tc) and Figure 4

Publishedby
InfineonTechnologiesAG
81726Mnchen,Germany
InfineonTechnologiesAG2016.
AllRightsReserved.

ImportantNotice
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(Beschaffenheitsgarantie).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
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16 Rev.2.6,2016-05-10