$GYDQFHG 3RZHU 026)(7 IRF634A

FEATURES
BVDSS = 250 V
Avalanche Rugged Technology
Rugged Gate Oxide Technology
RDS(on) = 0.45
Lower Input Capacitance ID = 8.1 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10A (Max.) @ VDS = 250V
TO-220
Lower RDS(ON): 0.327 (Typ.)
1
2
3

1.Gate 2. Drain 3. Source

Absolute Maximum Ratings

Symbol Characteristic Value Units
VDSS Drain-to-Source Voltage 250 V
Continuous Drain Current (TC=25C) 8.1
ID A
Continuous Drain Current (TC=100C) 5.1
IDM Drain Current-Pulsed (1) 32 A
VGS Gate-to-Source Voltage 30 V
EAS Single Pulsed Avalanche Energy (2) 205 mJ
IAR Avalanche Current (1) 8.1 A
EAR Repetitive Avalanche Energy (1) 7.4 mJ
dv/dt Peak Diode Recovery dv/dt (3) 4.8 V/ns
Total Power Dissipation (TC=25C) 74 W
PD
Linear Derating Factor 0.59 W/C
Operating Junction and
TJ , TSTG - 55 to +150
Storage Temperature Range
Maximum Lead Temp. for Soldering C
TL 300
Purposes, 1/8 from case for 5-seconds

Thermal Resistance
Symbol Characteristic Typ. Max. Units
RJC Junction-to-Case -- 1.69
RCS Case-to-Sink 0.5 -- C/W
RJA Junction-to-Ambient -- 62.5

Rev. B

1999 Fairchild Semiconductor Corporation

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IRF634A 32:(5 026)(7

Electrical Characteristics (TC=25C unless otherwise specified)

Symbol Characteristic Min. Typ. Max. Units Test Condition
BVDSS Drain-Source Breakdown Voltage 250 -- -- V VGS=0V,ID=250A
BV/TJ Breakdown Voltage Temp. Coeff. -- 0.29 -- V/C ID=250A See Fig 7
VGS(th) Gate Threshold Voltage 2.0 -- 4.0 V VDS=5V,ID=250A
Gate-Source Leakage , Forward -- -- 100 VGS=30V
IGSS nA
Gate-Source Leakage , Reverse -- -- -100 VGS=-30V
-- -- 10 VDS=250V
IDSS Drain-to-Source Leakage Current A VDS=200V,TC=125C
-- -- 100
Static Drain-Source
RDS(on) -- -- 0.45 VGS=10V,ID=4.05A (4)
On-State Resistance

gfs Forward Transconductance -- 6.1 -- VDS=40V,ID=4.05A (4)
Ciss Input Capacitance -- 730 950
VGS=0V,VDS=25V,f =1MHz
Coss Output Capacitance -- 110 130 pF
See Fig 5
Crss Reverse Transfer Capacitance -- 50 60
td(on) Turn-On Delay Time -- 13 40
VDD=125V,ID=8.1A,
tr Rise Time -- 14 40
ns RG=12
td(off) Turn-Off Delay Time -- 53 120
See Fig 13 (4) (5)
tf Fall Time -- 21 50
Qg Total Gate Charge -- 30 40 VDS=200V,VGS=10V,
Qgs Gate-Source Charge -- 5.8 -- nC ID=8.1A
Qgd Gate-Drain ( Miller ) Charge -- 13.5 -- See Fig 6 & Fig 12 (4) (5)

Source-Drain Diode Ratings and Characteristics

Symbol Characteristic Min. Typ. Max. Units Test Condition
IS Continuous Source Current -- -- 8.1 Integral reverse pn-diode
A
ISM Pulsed-Source Current (1) -- -- 32 in the MOSFET
VSD Diode Forward Voltage (4) -- -- 1.5 V TJ=25C,IS=8.1A,VGS=0V
trr Reverse Recovery Time -- 190 -- ns TJ=25C,IF=8.1A
Qrr Reverse Recovery Charge -- 1.28 -- C diF/dt=100A/s (4)

Notes;
(1) Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
(2) L=5mH, IAS=8.1A, VDD=50V, RG=27, Starting TJ =25C
(3) ISD 8.1A, di/dt 210A/s, VDD BVDSS , Starting TJ =25C
(4) Pulse Test: Pulse Width = 250s, Duty Cycle 2%
(5) Essentially Independent of Operating Temperature
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32:(5 026)(7 IRF634A
Fig 1. Output Characteristics Fig 2. Transfer Characteristics
VGS
Top : 15 V
10 V
101 8.0 V 101
7.0 V
ID , Drain Current [A]

ID , Drain Current [A]

6.0 V
5.5 V
5.0 V
Bottom : 4.5 V

150 oC
100 100

25 oC @ Notes :
1. VGS = 0 V
@ Notes : 2. VDS = 40 V
1. 250 s Pulse Test - 55 oC 3. 250 s Pulse Test
2. TC = 25 oC
-1 -1
10 10
10-1 100 101 2 4 6 8 10
VDS , Drain-Source Voltage [V] VGS , Gate-Source Voltage [V]

Fig 3. On-Resistance vs. Drain Current Fig 4. Source-Drain Diode Forward Voltage
1.00

IDR , Reverse Drain Current [A]

101
Drain-Source On-Resistance

0.75 VGS = 10 V
RDS(on) , [ ]

0.50

100
VGS = 20 V
0.25
@ Notes :
150 oC 1. VGS = 0 V
o 2. 250 s Pulse Test
@ Note : TJ = 25 C 25 oC
0.00 10-1
0 10 20 30 40 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
ID , Drain Current [A] VSD , Source-Drain Voltage [V]

Fig 5. Capacitance vs. Drain-Source Voltage Fig 6. Gate Charge vs. Gate-Source Voltage
1200
Ciss= Cgs+ Cgd ( Cds= shorted )
Coss= Cds+ Cgd VDS = 50 V
Crss= Cgd 10
C iss
VGS , Gate-Source Voltage [V]

VDS = 125 V
Capacitance [pF]

800
VDS = 200 V

5
@ Notes :
400 C oss 1. VGS = 0 V
2. f = 1 MHz
C rss

@ Notes : ID = 8.1 A
00 0
10 101 0 5 10 15 20 25 30
VDS , Drain-Source Voltage [V] QG , Total Gate Charge [nC]
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IRF634A 32:(5 026)(7

Fig 7. Breakdown Voltage vs. Temperature Fig 8. On-Resistance vs. Temperature

Drain-Source Breakdown Voltage 1.2 3.0

2.5

Drain-Source On-Resistance
BVDSS , (Normalized)

RDS(on) , (Normalized)
1.1
2.0

1.0 1.5

1.0
0.9 @ Notes : @ Notes :
1. VGS = 0 V 1. VGS = 10 V
0.5
2. ID = 250 A 2. ID = 4.05 A

0.8 0.0
-75 -50 -25 0 25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175
TJ , Junction Temperature [oC] TJ , Junction Temperature [oC]

Fig 9. Max. Safe Operating Area Fig 10. Max. Drain Current vs. Case Temperature
10
Operation in This Area
102 is Limited by R DS(on)
8
ID , Drain Current [A]

ID , Drain Current [A]

10 s
100 s
101
1 ms
6
10 ms
DC
100
4

@ Notes :
10-1 1. TC = 25 oC 2
2. TJ = 150 oC
3. Single Pulse
10-2 0 0
10 101 102 25 50 75 100 125 150
VDS , Drain-Source Voltage [V] Tc , Case Temperature [oC]

Fig 11. Thermal Response

Thermal Response

100
D=0.5

@ Notes :
0.2 1. Z J C (t)=1.69 o C/W Max.
2. Duty Factor, D=t1 /t2
0.1
3. TJ M -TC =PD M *Z J C (t)
10 -1 0.05
Z JC(t) ,

0.02 PDM
0.01
single pulse t1
t2

10- 2 - 5
10 10- 4 10- 3 10- 2 10- 1 100 101
t1 , Square Wave Pulse Duration [sec]
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Fig 12. Gate Charge Test Circuit & Waveform

Current Regulator
VGS
Same Type
50k as DUT Qg
12V 200nF
300nF 10V

VDS
VGS Qgs Qgd

DUT
3mA
R1 R2

Current Sampling (IG) Current Sampling (ID)

Charge
Resistor Resistor

Fig 13. Resistive Switching Test Circuit & Waveforms

RL
Vout Vout
90%
Vin VDD
( 0.5 rated VDS )
RG
DUT 10%
Vin
10V
td(on) tr td(off)
tf
t on t off

Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms

BVDSS
LL 1
EAS = ---- LL IAS2 --------------------
VDS 2 BVDSS -- VDD
Vary tp to obtain ID BVDSS
required peak ID IAS

RG C VDD ID (t)
DUT
VDD VDS (t)
10V
tp tp Time
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IRF634A 32:(5 026)(7

Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

--

IS
L

Driver
VGS
RG Same Type
as DUT VDD

VGS dv/dt controlled by RG

IS controlled by Duty Factor D

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

IS
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

Vf VDD

Body Diode
Forward Voltage Drop
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Definition of Terms

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Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

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supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

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any time without notice in order to improve design.

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The datasheet is printed for reference information only.