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TRENCHSTOPTM5softswitchingIGBT
TRENCHSTOPTM5highspeedsoftswitchingIGBTcopackedwithfullcurrent
ratedRAPID1fastandsoftantiparalleldiode
FeaturesandBenefits:
HighspeedS5technologyoffering
Highspeedsmoothswitchingdeviceforhard&softswitching
VeryLowVCEsat,1.42Vatnominalcurrent
PlugandplayreplacementofpreviousgenerationIGBTs
650Vbreakdownvoltage
LowgatechargeQG
IGBTcopackedwithfullratedRAPID1fastantiparalleldiode
Maximumjunctiontemperature175C
QualifiedaccordingtoJEDECfortargetapplications
Pb-freeleadplating;RoHScompliant
CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
Applications:
IndustrialUPS
IndustrialSMPS
EnergyStorage
Charger
Welding
ProductValidation:
Qualifiedforapplicationslistedabovebasedonthetest
conditionsintherelevanttestsofJEDEC20/22
Packagepindefinition:
PinC&backside-collector
PinE-emitter
PinK-Kelvinemitter
PinG-gate
Pleasenote:TheemitterandKelvinemitterpinsarenot
exchangeable.Theirexchangemightleadtomalfunction.
KeyPerformanceandPackageParameters
Type VCE IC VCEsat,Tvj=25C Tvjmax Marking Package
IKZ50N65ES5 650V 50A 1.35V 175C K50EES5 PG-TO247-4
TRENCHSTOPTM5softswitchingIGBT
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
Datasheet 2 V2.1
2017-04-26
IKZ50N65ES5
TRENCHSTOPTM5softswitchingIGBT
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
ThermalResistance
Value
Parameter Symbol Conditions Unit
min. typ. max.
RthCharacteristics
IGBT thermal resistance,
Rth(j-C) - - 0.55 K/W
junction - case
Diode thermal resistance,
Rth(j-C) - - 0.63 K/W
junction - case
Thermal resistance
Rth(j-a) - - 40 K/W
junction - ambient
1)
value limited by bondwire
Datasheet 3 V2.1
2017-04-26
IKZ50N65ES5
TRENCHSTOPTM5softswitchingIGBT
ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 650 - - V
VGE=15.0V,IC=50.0A
Tvj=25C - 1.35 1.70
Collector-emitter saturation voltage VCEsat V
Tvj=125C - 1.50 -
Tvj=175C - 1.60 -
VGE=0V,IF=50.0A
Tvj=25C - 1.45 1.70
Diode forward voltage VF V
Tvj=125C - 1.42 -
Tvj=175C - 1.39 -
Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE 3.2 4.0 4.8 V
VCE=650V,VGE=0V
Zero gate voltage collector current ICES Tvj=25C - - 50 A
Tvj=175C - 2000 -
Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA
Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S
ElectricalCharacteristic,atTvj=25C,unlessotherwisespecified
Value
Parameter Symbol Conditions Unit
min. typ. max.
DynamicCharacteristic
Input capacitance Cies - 3100 -
Output capacitance Coes VCE=25V,VGE=0V,f=1MHz - 88 - pF
Reverse transfer capacitance Cres - 12 -
VCC=520V,IC=50.0A,
Gate charge QG - 120.0 - nC
VGE=15V
Internal emitter inductance
measured 5mm (0.197 in.) from LE - 13.0 - nH
case
SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=25C
Turn-on delay time td(on) Tvj=25C, - 36 - ns
Rise time tr VCC=400V,IC=50.0A, - 22 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=23.1,RG(off)=23.1, - 294 - ns
Fall time tf L=30nH,C=30pF - 32 - ns
L,CfromFig.E
Turn-on energy Eon Energy losses include tail and - 0.77 - mJ
Turn-off energy Eoff diode reverse recovery. - 0.88 - mJ
Total switching energy Ets - 1.65 - mJ
Datasheet 4 V2.1
2017-04-26
IKZ50N65ES5
TRENCHSTOPTM5softswitchingIGBT
DiodeCharacteristic,atTvj=25C
Diode reverse recovery time trr Tvj=25C, - 62 - ns
Diode reverse recovery charge Qrr VR=400V, - 1.40 - C
IF=50.0A,
Diode peak reverse recovery current Irrm diF/dt=2500A/s - 40.0 - A
Diode peak rate of fall of reverse
dirr/dt - -1100 - A/s
recoverycurrentduringtb
SwitchingCharacteristic,InductiveLoad
Value
Parameter Symbol Conditions Unit
min. typ. max.
IGBTCharacteristic,atTvj=150C
Turn-on delay time td(on) Tvj=150C, - 34 - ns
Rise time tr VCC=400V,IC=50.0A, - 26 - ns
VGE=0.0/15.0V,
Turn-off delay time td(off) RG(on)=23.1,RG(off)=23.1, - 328 - ns
Fall time tf L=30nH,C=30pF - 38 - ns
L,CfromFig.E
Turn-on energy Eon Energy losses include tail and - 1.00 - mJ
Turn-off energy Eoff diode reverse recovery. - 1.20 - mJ
Total switching energy Ets - 2.20 - mJ
Datasheet 5 V2.1
2017-04-26
IKZ50N65ES5
TRENCHSTOPTM5softswitchingIGBT
DiodeCharacteristic,atTvj=150C
Diode reverse recovery time trr Tvj=150C, - 92 - ns
Diode reverse recovery charge Qrr VR=400V, - 3.20 - C
IF=50.0A,
Diode peak reverse recovery current Irrm diF/dt=2500A/s - 63.0 - A
Diode peak rate of fall of reverse
dirr/dt - -1100 - A/s
recoverycurrentduringtb
Datasheet 6 V2.1
2017-04-26
IKZ50N65ES5
TRENCHSTOPTM5softswitchingIGBT
275 90
250
80
225
70
200
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]
60
175
150 50
125 40
100
30
75
20
50
10
25
0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC,CASETEMPERATURE[C] TC,CASETEMPERATURE[C]
Figure 1. Powerdissipationasafunctionofcase Figure 2. Collectorcurrentasafunctionofcase
temperature temperature
(Tvj175C) (VGE15V,Tvj175C)
150 150
VGE = 20V VGE = 20V
15V 15V
120 120
12V 12V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
105 105
10V 10V
90 8V 90 8V
7V 7V
75 75
6V 6V
60 5V 60 5V
45 45
30 30
15 15
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE,COLLECTOR-EMITTERVOLTAGE[V] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 3. Typicaloutputcharacteristic Figure 4. Typicaloutputcharacteristic
(Tvj=25C) (Tvj=175C)
Datasheet 7 V2.1
2017-04-26
IKZ50N65ES5
TRENCHSTOPTM5softswitchingIGBT
150 3.0
Tvj = 25C IC = 25A
Tvj = 150C IC = 50A
135 IC = 100A
VCEsat,COLLECTOR-EMITTERSATURATION[V]
2.5
120
IC,COLLECTORCURRENT[A]
105
2.0
90
75 1.5
60
1.0
45
30
0.5
15
0 0.0
2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175
VGE,GATE-EMITTERVOLTAGE[V] Tvj,JUNCTIONTEMPERATURE[C]
Figure 5. Typicaltransfercharacteristic Figure 6. Typicalcollector-emittersaturationvoltageas
(VCE=20V) afunctionofjunctiontemperature
(VGE=15V)
1000 1000
td(off)
tf
td(on)
tr
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
100 100
10 10
td(off)
tf
td(on)
tr
1 1
0 30 60 90 120 150 0 10 20 30 40 50 60
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[]
Figure 7. Typicalswitchingtimesasafunctionof Figure 8. Typicalswitchingtimesasafunctionofgate
collectorcurrent resistance
(inductiveload,Tvj=150C,VCE=400V, (inductiveload,Tvj=150C,VCE=400V,
VGE=0/15V,RGon=23,1,RGoff=23,1, VGE=0/15V,IC=75A,dynamictestcircuitin
dynamic test circuit in Figure E) Figure E)
Datasheet 8 V2.1
2017-04-26
IKZ50N65ES5
TRENCHSTOPTM5softswitchingIGBT
1000 6
typ.
min.
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
max.
5
t,SWITCHINGTIMES[ns]
100 4
10 2
td(off) 1
tf
td(on)
tr
1 0
25 50 75 100 125 150 175 25 50 75 100 125 150
Tvj,JUNCTIONTEMPERATURE[C] Tvj,JUNCTIONTEMPERATURE[C]
Figure 9. Typicalswitchingtimesasafunctionof Figure 10. Gate-emitterthresholdvoltageasafunction
junctiontemperature ofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V, (IC=0.5mA)
IC=75A,RGon=23,1,RGoff=23,1,dynamic
test circuit in Figure E)
9 5
Eoff Eoff
Eon Eon
8 Ets Ets
4
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
3
5
4
2
2
1
0 0
0 30 60 90 120 150 0 10 20 30 40 50
IC,COLLECTORCURRENT[A] RG,GATERESISTANCE[]
Figure 11. Typicalswitchingenergylossesasa Figure 12. Typicalswitchingenergylossesasa
functionofcollectorcurrent functionofgateresistance
(inductiveload,Tvj=150C,VCE=400V, (inductiveload,Tvj=150C,VCE=400V,
VGE=0/15V,RGon=23,1,RGoff=23,1, VGE=0/15V,IC=75A,dynamictestcircuitin
dynamic test circuit in Figure E) Figure E)
Datasheet 9 V2.1
2017-04-26
IKZ50N65ES5
TRENCHSTOPTM5softswitchingIGBT
3.0 3.0
Eoff Eoff
Eon Eon
Ets Ets
2.5 2.5
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
2.0 2.0
1.5 1.5
1.0 1.0
0.5 0.5
0.0 0.0
25 50 75 100 125 150 175 200 250 300 350 400 450 500
Tvj,JUNCTIONTEMPERATURE[C] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 13. Typicalswitchingenergylossesasa Figure 14. Typicalswitchingenergylossesasa
functionofjunctiontemperature functionofcollectoremittervoltage
(inductiveload,VCE=400V,VGE=0/15V, (inductiveload,Tvj=150C,VGE=0/15V,
IC=75A,RGon=23,1,RGoff=23,1,dynamic IC=75A,RGon=23,1,RGoff=23,1,dynamic
test circuit in Figure E) test circuit in Figure E)
16 1E+4
VCC=130V
VCC=520V
14
VGE,GATE-EMITTERVOLTAGE[V]
12 1000
C,CAPACITANCE[pF]
10
8 100
4 10
Cies
2 Coes
Cres
0 1
0 20 40 60 80 100 120 0 5 10 15 20 25 30
QGE,GATECHARGE[nC] VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 15. Typicalgatecharge Figure 16. Typicalcapacitanceasafunctionof
(IC=75A) collector-emittervoltage
(VGE=0V,f=1MHz)
Datasheet 10 V2.1
2017-04-26
IKZ50N65ES5
TRENCHSTOPTM5softswitchingIGBT
1 1
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
D = 0.5 D = 0.5
0.1 0.1
0.2 0.2
0.1 0.1
0.05 0.05
0.02 0.02
0.01 0.01
single pulse single pulse
0.01 0.01
i: 1 2 3 4 5 i: 1 2 3 4
ri[K/W]: 0.030556 0.137971 0.162007 0.15972 0.059746 ri[K/W]: 0.066623 0.198269 0.201696 0.163411
i[s]: 2.4E-5 3.1E-4 3.1E-3 0.024936 0.134448 i[s]: 2.1E-5 3.7E-4 5.5E-3 0.057467
0.001 0.001
1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1
tp,PULSEWIDTH[s] tp,PULSEWIDTH[s]
Figure 17. IGBTtransientthermalimpedance Figure 18. Diodetransientthermalimpedanceasa
(D=tp/T) functionofpulsewidth
(D=tp/T)
120 4.5
Tvj = 25C, IF = 50A Tvj = 25C, IF = 50A
Tvj = 150C, IF = 50A Tvj = 150C, IF = 50A
110 4.0
Qrr,REVERSERECOVERYCHARGE[C]
100
3.5
trr,REVERSERECOVERYTIME[ns]
90
3.0
80
2.5
70
2.0
60
1.5
50
1.0
40
30 0.5
20 0.0
2000 2500 3000 3500 4000 4500 5000 5500 2000 2500 3000 3500 4000 4500 5000 5500
diF/dt,DIODECURRENTSLOPE[A/s] diF/dt,DIODECURRENTSLOPE[A/s]
Figure 19. Typicalreverserecoverytimeasafunction Figure 20. Typicalreverserecoverychargeasa
ofdiodecurrentslope functionofdiodecurrentslope
(VR=400V) (VR=400V)
Datasheet 11 V2.1
2017-04-26
IKZ50N65ES5
TRENCHSTOPTM5softswitchingIGBT
110 0
Tvj = 25C, IF = 50A Tvj = 25C, IF = 50A
Tvj = 150C, IF = 50A Tvj = 150C, IF = 50A
100
dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/s]
-500
Irr,REVERSERECOVERYCURRENT[A]
90
-1000
80
-1500
70
60
-2000
50
-2500
40
-3000
30
20 -3500
2000 2500 3000 3500 4000 4500 5000 5500 2000 2500 3000 3500 4000 4500 5000 5500
diF/dt,DIODECURRENTSLOPE[A/s] diF/dt,DIODECURRENTSLOPE[A/s]
Figure 21. Typicalreverserecoverycurrentasa Figure 22. Typicaldiodepeakrateoffallofreverse
functionofdiodecurrentslope recoverycurrentasafunctionofdiode
(VR=400V) currentslope
(VR=400V)
150 2.50
Tvj = 25C IF = 25A
Tvj = 150C IF = 50A
135 IF = 100A
2.25
120
2.00
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
105
1.75
90
75 1.50
60
1.25
45
1.00
30
0.75
15
0 0.50
0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175
VF,FORWARDVOLTAGE[V] Tvj,JUNCTIONTEMPERATURE[C]
Figure 23. Typicaldiodeforwardcurrentasafunction Figure 24. Typicaldiodeforwardvoltageasafunction
offorwardvoltage ofjunctiontemperature
Datasheet 12 V2.1
2017-04-26
IKZ50N65ES5
TRENCHSTOPTM5softswitchingIGBT
5 6
Datasheet 13 V2.1
2017-04-26
IKZ50N65ES5
TRENCHSTOPTM5softswitchingIGBT
Testing Conditions
VGE(t)
I,V
90% VGE
t rr = t a + t b
dIF/dt
Q rr = Q a + Q b
a b
10% VGE
t
IC(t) Qa Qb
dI
90% IC
90% IC
10% IC 10% IC
t
Figure C. Definition of diode switching
characteristics
VCE(t)
td(off) tf td(on) tr
t
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure B.
Datasheet 14 V2.1
2017-04-26
IKZ50N65ES5
TRENCHSTOPTM5softswitchingIGBT
RevisionHistory
IKZ50N65ES5
Revision:2017-04-26,Rev.2.1
Previous Revision
Revision Date Subjects (major changes since last revision)
2.1 2017-04-26 Final data sheet
Datasheet 15 V2.1
2017-04-26
TrademarksofInfineonTechnologiesAG
HVIC,IPM,PFC,AU-ConvertIR,AURIX,C166,CanPAK,CIPOS,CIPURSE,CoolDP,
CoolGaN,COOLiR,CoolMOS,CoolSET,CoolSiC,DAVE,DI-POL,DirectFET,DrBlade,EasyPIM,
EconoBRIDGE,EconoDUAL,EconoPACK,EconoPIM,EiceDRIVER,eupec,FCOS,GaNpowIR,
HEXFET,HITFET,HybridPACK,iMOTION,IRAM,ISOFACE,IsoPACK,LEDrivIR,LITIX,MIPAQ,
ModSTACK,my-d,NovalithIC,OPTIGA,OptiMOS,ORIGA,PowIRaudio,PowIRStage,PrimePACK,
PrimeSTACK,PROFET,PRO-SIL,RASIC,REAL3,SmartLEWIS,SOLIDFLASH,SPOC,
StrongIRFET,SupIRBuck,TEMPFET,TRENCHSTOP,TriCore,UHVIC,XHP,XMC
TrademarksupdatedNovember2015
OtherTrademarks
Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.
Publishedby
InfineonTechnologiesAG
81726Mnchen,Germany
InfineonTechnologiesAG2017.
AllRightsReserved.
ImportantNotice
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics
(Beschaffenheitsgarantie).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/orany
informationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesand
liabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythird
party.
Inaddition,anyinformationgiveninthisdocumentissubjecttocustomerscompliancewithitsobligationsstatedinthis
documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomersproductsandanyuseof
theproductofInfineonTechnologiesincustomersapplications.
Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityof
customerstechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthe
completenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.
Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearest
InfineonTechnologiesoffice(www.infineon.com).
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ElectronicsCouncil.
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pleasecontactyournearestInfineonTechnologiesoffice.
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