ME 500 c. Either way a.

Forward
Basic Electronics d. None of the above b. Inverse
c. Poor
8. If you wanted to produce a p-type semiconductor, d. Reverse
1. An ideal voltage source has which of these would you use? d. None of the above
a. Zero internal resistance a. Acceptor atoms
b. Infinite internal resistance b. Donor atoms FORWARD BIAS is an external voltage that is applied to a PN
c. A load-dependent voltage c. Pentavalent impurity junction to reduce its barrier and, therefore, aid current flow
d. A load-dependent current d. Silicon through the junction.
d. Impossible to say
2. An ideal current source has For numbers 12-13 refer to the figure below.
a. Zero internal resistance N-type Semiconductor
b. Infinite internal resistance This type of impurity has 5 valence electrons and is called a
c. A load-dependent voltage PENTAVALENT impurity (DONORS). Examples are,
d. A load-dependent current Phosphorus, Arsenic, Antimony
Minority carriers: Holes
3. The net charge of a neutral copper atom is Majority carriers: Electron
a. 0 12. How much load current is there with the ideal
b. +1 P-Type Semiconductor diode?
c. -1 Impurities of this type have only 3 valence electrons and are a. 0
d. +4 called TRIVALENT impurities (ACCEPTORS). Examples are b. 14.3 mA
Aluminum, indium, gallium, and boron. c. 15 mA
4. The valence electron of a copper atom experiences Minority carriers: Electron d. 50 mA
what kind of attraction toward the nucleus? Majority carriers: Holes
a. None In ideal approximation bulk resistance and threshold voltage
b. Weak 9. To produce a large forward current in a silicon are neglected.
c. Strong diode, the applied voltage must be greater than
d. Impossible to say a. 0 13. How much load current is there with the simplified
b. 0.3 V model?
Characteristic of material in terms of valence c. 0.7 V a. 0
electron: d. 1 V b. 14.3 mA
Conductor <4 c. 15 mA
Insulator >4 Threshold Voltage is the forward voltage required to reach the d. 50 mA
Semi-conductor =4 region of upward swing
In simplified approximation bulk resistance is neglected and
5. The amount of time between the creation of a hole and threshold voltage is considered.
and its disappearance is called
a. Doping 14. A zener diode
b. Lifetime a. Is a battery
10. How is a nonconducting diode biased?
c. Recombination b. Has a constant voltage in the breakdown region
a. Forward
d. Valence c. Has a barrier potential of 1 V
b. Inverse
c. Poorly d. Is forward-biased
6. A semiconductor has how many types of flow?
d. Reverse
a. 1 15. A germanium diode is connected to a load
b. 2 resistance of 1.5 k and is supplied with 12-V such
c. 3 that the diode will be forward biased. What is the
REVERSE BIAS is an external voltage that is connected across
d. 4 voltage across the diode?
a PN junction so that its voltage aids the junction and,
thereby, offers a high resistance to the current flow through a. approximately 12 V
7. The flow of valence electrons to the left means that b. approximately 0.7 V
the junction.
holes are flowing to the c. approximately 0.3 V
a. Left d. lack of data and cant be solved
11. When the diode current is large, the bias is
b. Right
 16. What is the drop across the diode when it is b. 25 V Current gain is always the output current over its input
connected in series to a resistor of 1.8 k and a c. 29.6 V current.
supply voltage of 50 V. The supply voltage causes d. 35.4 V Current gain for common-emitter configuration:
the diode to be reverse-biased.
a. 50 V Half-wave rectifier output (dc) voltage:
b. 0.7 V
c. 0.3 V
d. can not be solve, lack of data
25. Ignoring the bulk resistance of the collector diode,
21. What is the peak load voltage out of a bridge
the collector-emitter saturation voltage is
17. __________is the procedure by which an atom is rectifier for a secondary voltage of 15 V rms? (Use
a. 0
given a net charge by adding or taking away second approximation.)
b. A few tenths of a volt
electron. a. 9.2 V
C. 1 V
a. Polarization b. 15 V
d. Supply voltage
b. Irradiation c. 19.8 V
c. Ionization d. 24.3 V
Saturation happens when the output current (Ic) of a BJT is at
d. Doping
maximum and Vce is 0V.
Bridge-rectifier output (dc) voltage:
Cutt-off happens when the output current (Ic) is 0mA and Vce
is maximum.
An atom having more than its normal amount of electrons
acquires a negative charge is called a NEGATIVE ION. The
22. If line frequency is 60 Hz, the output frequency of a For numbers 26-29 refer to the network below
atom that gives up some of its normal electrons is left with
fewer negative charges than positive charges and is called a bridge rectifier is
POSITIVE ION. a. 30 Hz
b. 60 Hz
18. If N1/N2 = 2, and the primary voltage is 120 V, what c. 120 Hz
is the secondary voltage? d. 240 Hz
a. 0 V
b. 36 V Bridge-rectifier output frequency is twice its input. Whereas
c. 60 V for half-wave rectifier circuits the output frequency is the
d. 240 V same as its input.

Transformer turns ratio: 23. The base of an npn transistor is thin and
1 a. Heavily doped
= 26. Output current is
b. Lightly doped
2 a. 3.11mA c. 3.2mA*
c. Metallic
b. 6.04 mA d. none of the these
19. A transformer has a turns ratio of 4: 1. What is the d. Doped by a pentavalent material
peak secondary voltage if 115 V rms is applied to 27. Current gain is
the primary winding? a. 10.1 A c. 80*
a. 40.7 V b. 90 d. none of the these
b. 64.6 V
c. 163 V 28. Rc is
d. 650 V a. 1.5k c. 1.875k*
b. 282k d. none of the these

= 24. If the base current is 100 mA and the current gain is
2 30, the collector current is 29. Vce is
a. 300 mA a. 0.7V c. 6V*
20. Line voltage may be from 105 V rms to 125 rms in a b. 3 A b. 2.7V d. none of the these
half-wave rectifier. With a 5:1 step-down c. 3.33 A
transformer, the maximum peak load voltage of an d. 10 A Basic BJT relationships:
ideal approximation is closest to
a. 21 V
 For numbers 33-34, refer to the circuit below if

30. In general, bipolar junction transistors are more

temperature stable than JFETs.
a. True b. False

Bipolar Junction Transistor Field Effect Transistor

Current controlled (IC)
npn or pnp
Bipolar
Low input impedance
Output is more sensitive to
changes in applied voltage
Less temperature stable
IC = I E
VBE = 0.7V
Voltage controlled (VGS)
n-channel or p-channel
Unipolar
(solely on either electron for n-
channel or holes for p-channel)
High input impedance
Output is less sensitive for the
same change in applied
voltage
More temperature stable
33. Output current (drain current)
a. 1.11mA*
ID = I S b. 3mA
IG = 0 mA c. 2.5mA
Usually smaller in construction d. none of these

31. Whatever method is used to bias a JFET, the gate-source 34. gate-source voltage is
junction is reversed-biased.
a. -2V
a. True b. False
b. 3V
c. -3V*
Basic FET relationships:
d. 2V

32. The current gain of a JFET amplifier

a. is high for small signal analysis
b. may range from 200 to 400
c. is varying depending on the configuration
d. is undefined