EE311

Introduction to Semiconductor
Devices

L-33 MOSFET-4

B. Mazhari
B M h i
Professor, Dept. of EE
p
IIT Kanpur

81
G-Number
B. Mazhari, IITK
MOS Transistor: Long Channel

N A =21017cm-3 ; t ox =10nm
M =4.3eV; L=5m;W 1m
ch 500cm 2 V -1s-1

82
G-Number
B. Mazhari, IITK
 L = 5m

Leff ~ 4.4 m

83
G-Number
B. Mazhari, IITK
Current Voltage Characteristics VGS VTN
VGS
VDS
SiO2 x
+ y
+ N
N

P-type X=0 X=L

VBS
dVch ( x ) I DS J N dydz
J N q n N y
dx
dVch ( x )
I DS W QN N
dx
Asumption-1 : current is primarily drift
Current Voltage Characteristics VGS VTN
VGS
VDS
SiO2 x
+ y
+ N
N

P-type X=0 X=L

VBS

dVch ( x )
I DS W QN N
dx
QN ( x ) COX VGS VT Vch ( x )

Asumption-2 : Charge Sheet approximation

 VGS
VDS
SiO2 x
+ y
+ N
N

P-type X=0 X=L

VBS

QN ( x ) COX VGS VT Vch ( x )

qN A
2 2
2
2 qN A
2

2 2
x 2
y S x 2
y y 2
S
L 0.5 m
Asumption-3 : Gradual channel approximation 1 10nm
50
tox
 QN ( x ) COX VGS VT Vch ( x )

QN ( x ) COX VGS VT Vch ( x ) 2F VSB Vch ( x ) 2F VSB
VGS
VDS
SiO2
+
+ N
N

P type
P-type X=0
X 0 X=L
X L

VBS

Asumption-4 : Neglect variation of depletion charge along the channel

Hole density profile in a MOSFET at VGS =3
=3, VDS =5V
Hole density profile in a MOSFET at VGS =3,
=3 VDS =0
=0.1V
1V
 dVch ( x )
I DS W QN N
dx

QN ( x ) COX VGS VT Vchh ( x )

I DS dVch ( x )
VGS VT Vch ( x )
W N COX dx

Asumption-5 : Mobility is constant

 I DS dVch ( x )
VGS VT Vch ( x )
W N COX dx
L VDS
I DS

W N COX 0
dx V
0
GS VT Vch ( x ) dVch ( x )

VGS
W 2
VDS
VDS I DS N COX VGS VT VDS
SiO2
L 2
+
+ N
N
QN ( x ) COX VGS VT Vch ( x ) 0
P-type X=0 X=L

VBS
VGS VT VDS 0

VDS VDsat VGS VT

 W 2
VDS
I DS N COX VGS VT VDS
L 2

1. Drift Current
2. Charge sheet approximation
3. Gradual channel approximation
4. Negligible variation of depletion charge
along the channel
5 Constant Mobility
5.
6. Negligible source and drain resistances
VGS
VDS
SiO2

+ +
N N

P-type

VBS
Example

21017cm-3 ; t ox =10nm
N A =210 10nm
M =4.3eV; L=5m;W 1m
ch 500cm 2 V -11s-11

2 S q N A 2F
VT VFB 2F 0.805V
Cox
 -6
6
8.0x10
VDS = 0.1V

-6
6.0x10
A)
DS (A

-6
4.0x10
ID

-6
2.0x10

0.0

00
0.0 05
0.5 10
1.0 15
1.5 20
2.0 25
2.5 30
3.0

VGS (volts)
 -6
8.0x10 VDS = 0.1V

-6 Intercept -3.05614E-6
6.0x10
Slope 3.54796E-6

IIDS (A)
-6
4.0x10

-6
6
2 0 10
2.0x10

0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS (volts)

W 2
VDS VT 0.5VDS 0.86V
I DS N COX VGS VT VDS
L 2 VT 0.81V
W
N COX VGS VT 0.5
0 5VDS VDS
L 514 cm2 V-1s-1
Saturation

W 2
VDS
I DS N COX VGS VT VDS
L 2

QN ( L) COX VGS VT VDS

I DS W QN N F ( x )

N F ( x ) vsat
VGS 3V ;VDS 0.1V
VGS 3V ;VDS 2.2V
 0

4
Cm)

-1x10
Ex (V/C

4
-2x10

VGS=3; VDS = 5V

4
-3x10
1 2 3 4
X (m))
 Qinv ( x ) Cox (VGS VTHN V ( x )) Cox (3 0.8 2.2) 0
Pinchoff
VTHN 0.8V
3V

2.2V
O id
Oxide

n+ n+

p-type
B High resistance region

Any further increase in drain bias is absorbed in a small region next to the drain
and rest of channel is not much affected and thus current becomes constant.
R R R R R
VD

R 100R
VD
 6
VGS=3; VDS = 5V
5
otential (V)

3
Po

0
0 1 2 3 4 5
X (m)
 VGS VT VDS 0
-5
9 0x10
9.0x10 VGS = 3V

-5
simulation
S (A)
6.0x10
IDS

-5
3.0x10 Model

0.0
0 2 4

VDS (volts)
( )
W 2
VDS W
N COX VGS VT VDS N COX VGS VT
2
I DS I DSAT
L 2 2L
 3V

2 2V
2.2V
Oxide

n+ n+

p type
p-type
B

After pinchoff or saturation, drain current does not change much with drain
voltage but is still very sensitive to gate voltage. MOSFET can now AMPLIFY
signals

IDS
+ I DS I DS
+
VGS VDS
VGS VDS

- -
For voltages larger than saturation voltage
Qinv ( x ) Cox (VGS VTHN V ( x )) Cox (3 0.8
0 8 22.2)
2) 0
3V

5V
Oxide

n+ n+

p-type
B

Pinchoff point moves left towards the source end. Voltage is VDSAT = 2.2V
Channel Length Modulation

5V
Oxide

n+ n+

L/

p-type
y L L L L
B

Effective channel length

g decreases as voltage g increases beyond
y
VDSAT . As a result current increases a little with voltage
 W
N COX VGS VT
2
I DSAT
2( L L)

W L
N COX VGS VT 1
2
I DSAT
2L
2L L

L
5V
Oxide

n+ n+

L/
p-type L L L
L
B

W VDS VDSAT
N COX VGS VT 1
2
I DSAT

2L Favg L
 W VDS VDSAT
N COX VGS VT 1
2
I DSAT
2L Favg L

N COX VGS VT 1 VDS VDSAT
W 2
I DSAT
2L
: channel length modulation parameter
1

Favg L

L
5V
Oxide

n+ n+

L/
p-type L L L
L
B
 -5
5
9 0 10
9.0x10 VGS = 3V

-5
IDS ((A)

6.0x10

-5
3.0x10

0.0
0 2 4

VDS (volts)
 N COX VGS VT 1 VDS VDSAT
W
I DSAT
2

-5 2L
S (A) 7 0x10
7.0x10

-5
6.9x10
IDS

Value
Intercept
p 6.86755E-5
-5 Slope 1.85951E-7
6.9x10

3.0 3.5 4.0 4.5 5.0

VDS ((volts)
lt )
I DSAT W
N COX VGS VT I DSAT 2.7 103 V 1
2

VDS 2L
1 micron channel length transistor

VG = 3Volts

-4
4.4x10
A)
IIDS (A

-4
4.3x10 Value
Intercept 3.95207E-4
Slope 1.32771E-5

-4
4 3.3
3 3 102 V 1
4.2x10

2.7 3.0

VDS (volts)
1

Favg L
Subthreshold Characteristics

-6
8.0x10
VDS = 0.1V

-6
6.0x10
IDS (A))

-6
4.0x10

-6
2.0x10
VT 0.81
0 81V
0.0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

VGS (volts)
 -5
10
-7
10
VDS = 0.1
-9
10
S (A)

-11
10
IDS

-13
10
-15
10
0 1 2 3
VT
VGS (volts)
( lt )
 MOS Operating
p g Regions
g

Above Threshold Subthreshold

(VGS > VTN) (VGS < VTN)

Saturation Triode
(VDS > VDSAT) (VDS < VDSAT)
 VG

2 S q N A 2F VSB
VS
Qinv
SiO2 VGB VFB 2F VSB
Cox COX
N-type

2 S q N A SB
VGB VFB SB
P-type

VB
Cox

2 S q N A S VB VS VS
VG VB VS VFB S VB VS
Cox
2 S q N A S VBS
VGS VFB S
Cox

ni2 EFNS EFNB q SB

nS exp exp
NA kT kT
ni2 q
exp S
NA kT
 ni2 q S
2 S q N A S VBS
nS exp
VGS VFB S NA kT
Cox

qqVGS
qVGS I DS exp
Qinv exp n kT
n kT
-5
5
10
-7
10
1 d log( I DS )
10
-9
VDS = 0
0.1
1
S
DS (A)

dVGS
-11
10
ID

VG
-13
10
S
10
-15
I D2
log
0
VT
1 2 3 D1
I
VGS (volts)

S : change in gate voltage for one order of magnitude change in current

 -5
10
VG
10
-7
7 S
I D2
-9
VDS = 0.1 log
10 D1
I
A)
IDS (A

-11
10
-13
10 VT
S
-15 IOFF Io
10 log
OFF
I
0 1 2 3
VT
VGS (volts)

I o VT W

2
log I DSAT N COX VGS VT
2L
I OFF S
OFF state current increases exponetially with reduction
in threshold voltage
 qVGS qVGS
d log( I DS ) exp
p Qinv exp
S 1
I DS
dVGS n kT n kT

ni2 q S
nS exp
NA kT
q
d log(exp S )
S 1 kT q d S
dVGS 2 3kT dVGS
2.3

2 S q N A S VBS Qd
VGS VFB S
Cox

kT Cdep
d S Cdep d S S 2.3 1
1 0 q Cox
dVGS Cox dVGS
 -5
10
-7
10
VDS = 0.1
-9
IDS (A) 10
-11
10 Value
Interce -15.63
-13 Slope 11.17
10
-15
10 ~89.5 mV/decade
0 1 2 3
VT
VGS (volts)

kT Cdep
S 2.3 1 ~94 mV/decade
q Cox