MDP7N60B / MDF7N60B N-channel MOSFET 600V

MDP7N60B / MDF7N60B
N-Channel MOSFET 600V, 7.0A, 1.15

General Description Features

These N-channel MOSFET are produced using advanced
VDS = 600V
MagnaChips MOSFET Technology, which provides low on-
VDS = 660V @ Tjmax
state resistance, high switching performance and excellent
ID = 7.0A @ VGS = 10V
quality.
RDS(ON) 1.15 @ VGS = 10V

These devices are suitable device for SMPS, high Speed Applications
switching and general purpose applications.

Power Supply

PFC

High Current, High Speed Switching

G
TO-220 TO-220F
MDP Series MDF Series
S

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol MDP7N60B MDF7N60B Unit
Drain-Source Voltage VDSS 600 V
Drain-Source Voltage @ Tjmax VDSS @ Tjmax 660 V
Gate-Source Voltage VGSS 30 V
o
TC=25 C 7.0 7.0* A
Continuous Drain Current o
ID
TC=100 C 4.4 4.4* A
Pulsed Drain Current(1) IDM 28 28* A
o
TC=25 C 131 42 W
Power Dissipation PD
o
Derate above 25 C 1.05 0.33 W/ oC

Repetitive Avalanche Energy(1) EAR 13.1 mJ

Peak Diode Recovery dv/dt(3) dv/dt 4.5 V/ns
Single Pulse Avalanche Energy(4) EAS 220 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C
* Id limited by maximum junction temperature

Thermal Characteristics
Characteristics Symbol MDP7N60B MDF7N60B Unit
(1)
Thermal Resistance, Junction-to-Ambient RJA 62.5 62.5 o
C/W
Thermal Resistance, Junction-to-Case(1) RJC 0.95 3.01

June. 2010 Version 1.3 1 MagnaChip Semiconductor Ltd.

 MDP7N60B / MDF7N60B N-channel MOSFET 600V
Ordering Information

Part Number Temp. Range Package Packing RoHS Status

o
MDP7N60BTH -55~150 C TO-220 Tube Halogen Free
o
MDF7N60BTH -55~150 C TO-220F Tube Halogen Free

Electrical Characteristics (Ta = 25oC

Characteristics Symbol Test Condition Min Typ Max Unit
Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 600 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 2.0 - 4.0
Drain Cut-Off Current IDSS VDS = 600V, VGS = 0V - - 1 A
Gate Leakage Current IGSS VGS = 30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 3.5A 1.0 1.15
Forward Transconductance gfs VDS = 30V, ID = 3.5A - 7.5 - S
Dynamic Characteristics
Total Gate Charge Qg - 20.1 -
(3)
Gate-Source Charge Qgs VDS = 480V, ID = 7.0A, VGS = 10V - 4.5 - nC
Gate-Drain Charge Qgd - 7.9 -
Input Capacitance Ciss - 800 -
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - 5 - pF
Output Capacitance Coss - 90 -
Turn-On Delay Time td(on) - 17 -
Rise Time tr VGS = 10V, VDS = 300V, ID = 7.0A, - 27 -
ns
Turn-Off Delay Time td(off) RG = 25(3) - 64 -
Fall Time tf - 33 -
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
IS - 7 - A
Source Diode Forward Current
Source-Drain Diode Forward
VSD IS = 7.0A, VGS = 0V - 1.4 V
Voltage
Body Diode Reverse Recovery
trr - 345 - ns
Time
IF = 7.0A, dl/dt = 100A/s(3)
Body Diode Reverse Recovery
Qrr - 3.2 - C
Charge

Note :

1. Pulse width is based on RJC & RJA and the maximum allowed junction temperature of 150C.
2. Pulse test: pulse width 300us, duty cycle2%, pulse width limited by junction temperature TJ(MAX)=150C.
3. ISD 7.0A, di/dt200A/us, VDD=50V, Rg =25, Starting TJ=25C
4. L=8.2mH, IAS=7.0A, VDD=50V, Rg =25, Starting TJ=25C,

June. 2010 Version 1.3 2 MagnaChip Semiconductor Ltd.

 MDP7N60B / MDF7N60B N-channel MOSFET 600V
14 2.2
Vgs=5.0V
12 =5.5V
=6.0V 2.0
=6.5V
10 =7.0V
ID,Drain Current [A]

=8.0V 1.8
=10.0V VGS=10.0V

RDS(ON) [ ]
8 =15.0V

1.6 VGS=20V
6

1.4
4

Notes 1.2
2 1. 250 Pulse Test
2. TC=25

0 1.0
0 5 10 15 20 25 0 3 6 9 12 15

VDS,Drain-Source Voltage [V] ID,Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage

3.0 1.2

Notes : Notes :
Drain-Source Breakdown Voltage

1. VGS = 10 V 1. VGS = 0 V
2.5 2. ID = 250
2. ID = 3.5A
Drain-Source On-Resistance

1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)

2.0

1.5 1.0

1.0

0.9

0.5

0.0 0.8
-50 0 50 100 150 200 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 Breakdown Voltage Variation vs.

Temperature Temperature

* Notes ; Notes :
1. VGS = 0 V
1. Vds=30V 10 2.250s Pulse test
10
Reverse Drain Current [A]

-55
IDR
ID(A)

150 150 25

1 1

25

0.1 0.1
2 4 6 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VGS [V] VSD, Source-Drain Voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

June. 2010 Version 1.3 3 MagnaChip Semiconductor Ltd.

 MDP7N60B / MDF7N60B N-channel MOSFET 600V
1500
Ciss = Cgs + Cgd (Cds = shorted)
10 Note : ID = 7.0A 1400 C oss Coss = Cds + Cgd
1300 Crss = Cgd
120V
1200
VGS, Gate-Source Voltage [V]

8 300V
1100
480V C iss
1000

Capacitance [pF]
6 900
800
700
4
600
Notes ;
500
C rss 1. VGS = 0 V
2 400 2. f = 1 MHz
300
200
0 100
0
0 2 4 6 8 10 12 14 16 18 20 22 1 10

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

2 2
10 10
Operation in This Area Operation in This Area
is Limited by R DS(on) 10 s is Limited by R DS(on) 10 s

100 s
1
10
1 100 s
10
1 ms 1 ms
ID, Drain Current [A]
ID, Drain Current [A]

10 ms
10 ms
100 ms 1s 100 ms
DC
0 0
10 10 DC

-1 -1
10 10

Single Pulse Single Pulse

TJ=Max rated TJ=Max rated
TC=25 TC=25
-2 -2
10 10
-1 0 1 2 -1 0 1 2
10 10 10 10 10 10 10 10

VDS, Drain-Source Voltage [V] VDS, Drain-Source Voltage [V]

Fig.10 Maximum Safe Operating Area

Fig.9 Maximum Safe Operating Area
MDF7N60B(TO-220F)
MDP7N60B(TO-220)

0
10

D=0.5
D=0.5
0
10
0.2
Thermal Response

0.2
Thermal Response

0.1 0.1
Z JC(t),
Z JC(t),

-1
10
0.05
0.05
-1
10 0.02
0.02 0.01
Notes : Notes :
0.01 Duty Factor, D=t1/t2 Duty Factor, D=t1/t2
PEAK TJ = PDM * Z JC* R JC(t) + TC PEAK TJ = PDM * Z JC* R JC(t) + TC
R JC=0.95/W R JC=3.01/W
single pulse single pulse
-2 -2
10 10
-5 -4 -3 -2 -1 0 1 -5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec] t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response Curve Fig.12 Transient Thermal Response Curve
MDP7N60B(TO-220) MDF7N60B(TO-220F)

June. 2010 Version 1.3 4 MagnaChip Semiconductor Ltd.

 MDP7N60B / MDF7N60B N-channel MOSFET 600V
15000 14000

single Pulse single Pulse

RthJC = 0.95/W 12000 RthJC = 3.01/W
12000
TC = 25 TC = 25
10000

9000
Power (W)

Power (W)
8000

6000
6000

4000

3000
2000

0 0
1E-5 1E-4 1E-3 0.01 0.1 1 10 1E-5 1E-4 1E-3 0.01 0.1 1 10

Pulse Width (s) Pulse Width (s)

Fig.13 Single Pulse Maximum Power Fig.14 Single Pulse Maximum Power
Dissipation MDP7N60B(TO-220) Dissipation MDF7N60B(TO-220F)

6
ID, Drain Current [A]

0
25 50 75 100 125 150

TC, Case Temperature []

Fig.15 Maximum Drain Current vs. Case

Temperature

June. 2010 Version 1.3 5 MagnaChip Semiconductor Ltd.

 MDP7N60B / MDF7N60B N-channel MOSFET 600V
Physical Dimensions

3 Leads, TO-220

Dimensions are in millimeters unless otherwise specified

June. 2010 Version 1.3 6 MagnaChip Semiconductor Ltd.

 MDP7N60B / MDF7N60B N-channel MOSFET 600V
Physical Dimensions

3 Leads, TO-220F

Dimensions are in millimeters unless otherwise specified

S y mbol Min Nom Max

A 4.50 4.93
b 0.63 0.91
b1 1.15 1.47
C 0.33 0.63
D 15.47 16.13
E 9.60 10.71
e 2.54
F 2.34 2.84
G 6.48 6.90
L 12.24 13.72
L1 2.79 3.67
Q 2.52 2.96
Q1 3.10 3.50
R 3.00 3.55

June. 2010 Version 1.3 7 MagnaChip Semiconductor Ltd.

 MDP7N60B / MDF7N60B N-channel MOSFET 600V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Sellers customers using or selling Sellers products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

June. 2010 Version 1.3 8 MagnaChip Semiconductor Ltd.