Metal Oxide Semiconductor System

Electrical Engineering Department Dr. Arief Udhiarto, S.T, M.T

Faculty of Engineering University of Indonesia
 Basic Principles

Band diagram
Metal semiconductor system (Schottky
contact)
Depletion region
Space charge region
Your imagination (the stronger the better
youll get)

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 MOS Structure

Thermal equilibrium
Effect of bias voltage (negative [-] and
positive [+] bias)

The concept is best described by the

band diagram approach
It is useful for understanding the micro
phenomena of the MOS system
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Two Terminal MOS Structure

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Energy Band Diagram p-Type Si

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 MOS Structure Thermal
Equilibrium
The fermi levels of the various materials
are equalized by the transfer of the
negative charge from the material with
higher fermi levels (smaller work functions)
across the interfaces to the materials with
lower fermi levels (higher work functions)

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 MOS Structure Thermal
Equilibrium
The insulator, which is incapable of
transferring charge sustain voltage drop
because of the charge stored on either
side of it
Thin sheet of positive charge at the
surface of the metal and negatively
charge acceptors extending into
semiconductor from its surface

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MOS Structure Thermal
Equilibrium

Fig 1. Energy
levels in three
separated
components
that form an
MOS system

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MOS Structure Thermal
Equilibrium

Fig 2. Typical energy-band

diagram at thermal equilibrium for
an MOS system composed of the
materials indicated in Fig 1.

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 MOS Structure Thermal
Equilibrium
Its hard to understand that equilibrium
could exist if the oxide is a perfect
insulating material (where would the
charge flow?)
If the system is fabricated without any path
of charge flow, the charge could exist in a
condition of non-equilibrium for a long
period

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 MOS Structure Negative Bias [-]

The applied voltage is set to a value that

exactly compensates the difference in the
work functions
The stored charge on the MOS capacitor
is then reduced to zero and the fields in
the oxide and semiconductor vanish

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 MOS Structure Neative Bias [-]
Flat-band condition

Fig 3. Energy-band diagram of

the MOS system under flat-band
conditions

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 MOS Structure Negative Bias [-]

Surface accumulation

Fig 4. (a) Energy-band diagram of an MOS system (p-

type) under surface accumulation, (b) charge in the
same MOS system

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 MOS Structure Positive Bias [+]
The thermal equilibrium condition is
consistent with the positive built-in voltage
between the metal and silicon
Is the built-in voltage of the MOS system is
aided by applying positive voltage
between the metal and the silicon, the
silicon will be further more depleted as
more acceptors become exposed at its
surface

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 MOS Structure Positive Bias [+]
Surface depletion

Fig 5. (a) Energy-band diagram of an MOS system (p-

type) under surface depletion

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 MOS Structure Positive Bias [+]

As the metal voltage is increased, the field

at the surface of the silicon increases and
the energy band bends considerably away
from their levels in the bulk
In the surface region, majority carriers
have been depleted and generation of
carriers will exceed recombination
Inversion layer, surface contains more
electrons than holes, is created
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 MOS Structure Positive Bias [+]

Inversion
Fig 6. (a)Energy-
band diagram,
(b)space-charge
configuration,
(c)field and
(d)potential
distribution for an
MOS system (p-
type) under inversion

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 MOS Capacitance

Surface accumulation
Depletion
Inversion (high and low frequency)
Deep depletion

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 MOS Capacitance - Accumulation

The capacitance measured will be closed

to that of the oxide itself because the
spatial extent of the modulated charge in
the silicon is small compared to the oxide
thickness
The more surface is accumulated, the
thinner will be the accumulation layer

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 MOS Capacitance - Accumulation

Thus the capacitance approaches :

ox
C ox
Eq 1.
x ox

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 MOS Capacitance - Depletion

The capacitance is a series connection of

the oxide capacitance and the silicon
capacitance across the surface depletion
region :

1
C
1 xd Eq 2.
Cox s

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 MOS Capacitance Deep
Depletion
Experimental situation in which both gate
bias voltage and the small signal
measuring voltage vary at a faster rate
than can be accommodated by generation
in the surface depletion region

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 MOS Capacitance - Inversion
When the DC bias and AC measuring signal are
changed very slowly, the signal frequency is low
enough so that the inversion layer population
can follow it
When AC measuring signal is changed rapidly,
the inversion layer cannot respond to the
measuring signal

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 MOS Capacitance

Fig 7. (a)Small-signal capacitance of the MOS system

(p-type), (b)The equivalent circuit for the overall
capacitance is the series connection

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 Conclusion

There are 5 important conditions under

MOS structure :
1. Flat band
2. Thermal equilibrium
3. Surface accumulation
4. Surface depletion
5. Inversion

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 Conclusion Contd

Each of these 5 conditions has their

own characteristic regarding to the
capacitance value.
These special characteristics can be
manipulated wisely for certain
application : CCD, flash memory, etc.

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 Donors and Acceptors

S. M. Sze :
A donor level is defined as being neutral if
filled by an electron, and positive if empty
An acceptor level is neutral if empty, and
negative if filled by an electron

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Energy Band Diagram for MOS

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Equilibrium

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MOS System with Bias

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MOS System with Bias

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MOS System Bias in Depletion Region

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MOS System with Bias

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