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MOS Capcitor
Threshold Voltage
Channel-Length Modulation
Velocity Saturation
Sub-threshold Conduction
Dynamic (Transient) Behavior:
MOS Structure Capacitances
Channel Capacitances
Junction Capacitances
Sources-Drain Parasitic Resistance
BITS Pilani, Pilani Campus
MOS Capacitances
CGS CGD
S D
Oxide related Capacitances
Overlap capacitances CGDO CGSO
Dynamic gate capacitance
Junction capacitances
e ox
C ox =
t ox
Source Drain (F/m2)
W
n+ xd xd n+
C ol =C ox x d W=C o W
Gate-bulk
Ld
overlap C gso =C gdo =C ol
Top view
Gate oxide
tox
n+ L n+ *Cfringe = (2ox/) ln (1+Tpoly/tox)
Cross section
S D S D S D
B B B
CG C
WLC ox WLC ox
CG C
2WLC ox
CG CS 3
WLC ox C G CS = CG CD WLC ox
CGC B
2 2 CGCD
VG S 0 VDS /( VG S-VT) 1
VT
Gate
5
4 2 W
SiO2 1
3 n+ xj
p LS Substrate
Source Drain
CGB = Cgb
CSB = Cdiff CDB = Cdiff
Body