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Although the first patent for a field effect transistors (FET) was
assigned to Julius Edgar Lilienfeld in 1925, it was not until sometime
around 1960 that the first commercial product was available - a
MOSFET designed by Dawon Kahng and Martin M. (John) Atalla at
Bell Labs. This article from a 1972 issue of Popular Electronics intro-
duces the hobbyist readers to properties and uses for the by-then
common junction FET (JFET) and MOSFET. Nowadays, MOSFETs are
the backbone of the vast majority of integrated circuits.
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The Field-Effect TransistorAugust 1972 Popular Electronics Page 2 of 5
Ever since its introduction, the field-effect transistor has been creat-
ing quite a stir in electronics. Devices and systems heretofore impos-
sible to produce with bipolar transistors had to be built around
vacuum tubes - if at all. Now, the FET is changing the situation.
The FET has many of the qualities and advantages of both the vacuum
tube triode and the bipolar transistor. It is as compact as most small-
signal transistors. It operates at low voltages, thus eliminating most
of the bulk and expense of the power supply. Its input impedance can
be rigged to fall into the desirable multi-megohm category. Recent
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The Field-Effect TransistorAugust 1972 Popular Electronics Page 3 of 5
In the JFET category, there are p- and n-channel types (see Fig. 2).
The n-channel FET is very similar in voltage polarities and biasing to
the vacuum tube triode as shown in Fig. 3.
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The Field-Effect TransistorAugust 1972 Popular Electronics Page 4 of 5
The dual-gate MOSFET finds its most popular application as the mixer
stage in AM, FM, and TV tuners where it provides a convenient means
of "beating" two frequencies in a nonlinear device while maintaining
isolation between the two signals. Also the MOSFET appears to
exhibit less noise and cross modulation problems than do conven-
tional transistors and vacuum tubes.
Virtually all MOSFET's produced for large current conditions are con-
tained in single packages - not integrated circuits. The reason for this
is that the FET needs roughly ten times the active area required by
bipolar transistors to provide the same current capabilities.
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The Field-Effect TransistorAugust 1972 Popular Electronics Page 5 of 5
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