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OptiMOS3 Power-Transistor
Product Summary
Features
V DS 40 V
Fast switching MOSFET for SMPS
R DS(on),max 1.9 m
Optimized technology for DC/DC converters
ID 100 A
1)
Qualified according to JEDEC for target applications
N-channel
PG-TDSON-8
Normal level
V GS=10 V, T A=25 C,
29
R thJA=50 K/W 2)
T A=25 C,
2.5
R thJA=50 K/W 2)
Thermal characteristics
Static characteristics
V DS=40 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.1 1 A
T j=25 C
V DS=40 V, V GS=0 V,
- 10 100
T j=125 C
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
4)
See figure 13 for more detailed information
Dynamic characteristics
Q sw V GS=0 to 10 V
Switching charge - 22 -
V DS=0.1 V,
Gate charge total, sync. FET Q g(sync) - 77 - nC
V GS=0 to 10 V
Reverse Diode
V GS=0 V, I F=50 A,
Diode forward voltage V SD - 0.85 1.2 V
T j=25 C
V R=20 V, I F=I S,
Reverse recovery charge Q rr - 100 - nC
di F/dt =400 A/s
5)
See figure 16 for gate charge parameter definition
140 120
120
100
100
80
80
P tot [W]
I D [A]
60
60
40
40
20
20
0 0
0 40 80 120 160 0 40 80 120 160
T C [C] T C [C]
103 10
limited by on-state
resistance 1 s
10 s
102 100 s
1
DC
Z thJC [K/W]
1 ms 0.5
I D [A]
1
10
0.2
10 ms
0.1
0.1
100 0.05
0.02
0.01
10-1 0.01 0
single pulse
0 0 0 0 0 1
-1 0 1 2
10 10 10 10 10-6 10-5 10-4 10-3 10-2 10-1 100
V DS [V] t p [s]
400 6
10 V
7V
5.5 V
6.5 V
5
300
R DS(on) [m]
5V
6V
I D [A]
200 3
6V
6.5 V
2 7V
5.5 V
10 V
100
1
5V
0 0
0 1 2 3 0 10 20 30 40 50
V DS [V] I D [A]
400 250
200
300
150
g fs [S]
I D [A]
200
100
150 C
100
25 C
50
0 0
2 3 4 5 6 7 8 0 40 80 120 160
V GS [V] I D [A]
3.5 4.5
3 4
2.5 3.5
R DS(on) [m]
2 98 %
3
V GS(th) [V]
typ
1.5 2.5
1 2
0.5 1.5
0 1
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
T j [C] T j [C]
104 10000
1000
Ciss
Coss
150 C, 98%
25 C
103 1000
100
150 C
C [pF]
I F [A]
25 C, 98%
102 100
Crss 10
101 10
1
0 10 20 30 40 0.0 0.5 1.0 1.5 2.0
V DS [V] V SD [V]
100 12
20 V
10
25 C
8V
100 C
32 V
125 C
8
V GS [V]
I AV [A]
10 6
1 0
1 10 100 1000 0 20 40 60 80 100
t AV [s] Q gate [nC]
45
V GS
Qg
40
35
V BR(DSS) [V]
30 V g s(th)
25
Q g(th) Q sw Q g ate
Q gs Q gd
20
-60 -20 20 60 100 140 180
T j [C]
PG-TDSON-8: Outline
Footprint
Dimensions in mm
Package Outline
PG-TDSON-8: Tape
Dimensions in mm
Published by
Infineon Technologies AG
81726 Munich, Germany
2008 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
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contact the nearest Infineon Technologies
(www.infineon.com).
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Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
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reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
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and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.