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QFET TM
FQP30N06
60V N-Channel MOSFET
D
!
"
! " "
G! "
TO-220
G DS !
FQP Series
S
Thermal Characteristics
Symbol Parameter Typ Max Units
RJC Thermal Resistance, Junction-to-Case -- 1.90 C/W
RCS Thermal Resistance, Case-to-Sink 0.5 -- C/W
RJA Thermal Resistance, Junction-to-Ambient -- 62.5 C/W
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 60 -- -- V
BVDSS Breakdown Voltage Temperature
ID = 250 A, Referenced to 25C -- 0.06 -- V/C
/ TJ Coefficient
IDSS VDS = 60 V, VGS = 0 V -- -- 1 A
Zero Gate Voltage Drain Current
VDS = 48 V, TC = 150C -- -- 10 A
IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 2.0 -- 4.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 15 A -- 0.031 0.04
On-Resistance
gFS Forward Transconductance VDS = 25 V, ID = 15 A (Note 4) -- 16 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 725 945 pF
Coss Output Capacitance f = 1.0 MHz -- 270 350 pF
Crss Reverse Transfer Capacitance -- 40 52 pF
Switching Characteristics
td(on) Turn-On Delay Time -- 10 30 ns
VDD = 30 V, ID = 15 A,
tr Turn-On Rise Time -- 85 180 ns
RG = 25
td(off) Turn-Off Delay Time -- 35 80 ns
tf Turn-Off Fall Time (Note 4, 5) -- 40 90 ns
Qg Total Gate Charge VDS = 48 V, ID = 30 A, -- 19 25 nC
Qgs Gate-Source Charge VGS = 10 V -- 5.4 -- nC
Qgd Gate-Drain Charge (Note 4, 5) -- 8.5 -- nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 360H, IAS = 30A, VDD = 25V, RG = 25 , Starting TJ = 25C
3. ISD 30A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C
4. Pulse Test : Pulse width 300s, Duty cycle 2%
5. Essentially independent of operating temperature
2 VGS 2
10 10
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
Bottom : 5.0 V
ID, Drain Current [A]
175
25
Notes :
Notes : 1. VDS = 25V
1. 250 s Pulse Test -55 2. 250 s Pulse Test
2. TC = 25
0 0
10 10
10
-1
10
0
10
1 2 4 6 8 10
100 2
10
80
Drain-Source On-Resistance
60 VGS = 10V
1
VGS = 20V 10
40
20
Notes :
175 25 1. VGS = 0V
Note : TJ = 25
2. 250 s Pulse Test
0
0 20 40 60 80 100 120 10
0
2000 12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
VDS = 30V
VDS = 48V
1500
V GS , Gate-Source Voltage [V]
8
Coss
Capacitance [pF]
Notes :
Ciss 1. VGS = 0 V
2. f = 1 MHz 6
1000
500
Crss 2
Note : ID = 30A
0
0 0 4 8 12 16 20
-1 0 1
10 10 10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
1.2
2.5
2.0
Drain-Source Breakdown Voltage
1.1
Drain-Source On-Resistance
BV DSS , (Normalized)
RDS(ON) , (Normalized)
1.5
1.0
1.0
0.9 Notes :
1. VGS = 0 V
2. ID = 250 A 0.5 Notes :
1. VGS = 10 V
2. ID = 15 A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
3
10 35
2
10
100 s 25
ID , Drain Current [A]
ID , Drain Current [A]
1 ms
10 ms 20
1
10 DC
15
10
0
10
Notes :
o
1. TC = 25 C 5
o
2. TJ = 175 C
3. Single Pulse
-1
10 0
10
-1
10
0
10
1 2
10 25 50 75 100 125 150 175
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
(t), T h e rm a l R e s p o n s e
0
10 D = 0 .5
0 .2
N otes :
1 . Z J C( t ) = 1 . 9 0 /W M a x .
0 .1 2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z J C( t )
-1
0 .0 5
10
0 .0 2 PDM
0 .0 1
t1
JC
s in g le p u ls e
t2
Z
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
VGS
Same Type
50K
as DUT Qg
12V 200nF
300nF 10V
VDS
VGS Qgs Qgd
DUT
3mA
Charge
RL VDS
VDS 90%
VGS VDD
RG
10%
VGS
10V DUT
td(on) tr td(off)
tf
t on t off
L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)
DUT +
VDS
I SD
L
Driver
RG
Same Type
as DUT VDD
IRM
VSD VDD
Body Diode
Forward Voltage Drop
TO-220
9.90 0.20 4.50 0.20
1.30 0.10
(8.70)
2.80 0.10
(1.70)
+0.10
3.60 0.10 1.30 0.05
18.95MAX.
(3.70)
15.90 0.20
9.20 0.20
(1.46)
(3.00)
(45
)
(1.00)
13.08 0.20
10.08 0.30
10.00 0.20
Dimensions in Millimeters
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.