TSOP17..

Photo Modules for PCM Remote Control Systems

Available types for different carrier frequencies

Type f0 Type f0
TSOP1730 30 kHz TSOP1733 33 kHz
TSOP1736 36 kHz TSOP1737 36.7 kHz
TSOP1738 38 kHz TSOP1740 40 kHz
TSOP1756 56 kHz

Description
The TSOP17.. series are miniaturized receivers for in-
frared remote control systems. PIN diode and GND
preamplifier are assembled on lead frame, the epoxy VS OUT
package is designed as IR filter.
94 8691
The demodulated output signal can directly be decoded
by a microprocessor. The main benefit is the reliable
function even in disturbed ambient and the protection
against uncontrolled output pulses.

Features
D Photo detector and preamplifier in one package D Improved shielding against electric field
D Output active low disturbance
D Internal filter for PCM frequency D 5 Volt supply voltage, low power consumption
D D TTL and CMOS compatibility
x
High immunity against ambient light
D Continuous transmission possible (tpi/T 0.4)

Block Diagram

2
VS
Input Control
100 kW
Circuit

3
OUT
PIN
Band Demodu-
AGC Pass lator
1
GND

94 8136

TELEFUNKEN Semiconductors 1 (6)

Rev. A2, 24-Sep-96
 TSOP17..
Absolute Maximum Ratings
Tamb = 25_C
Parameter Test Conditions Symbol Value Unit
Supply Voltage (Pin 2) VS 0.3...6.0 V
Supply Current (Pin 2) IS 5 mA
Output Voltage (Pin 3) VO 0.3...6.0 V
Output Current (Pin 3) IO 5 mA
Junction Temperature Tj 100 C
Storage Temperature Range Tstg 25...+85 C
Operating Temperature Range Tamb 25...+85 C
Power Consumption x
(Tamb 85 C) Ptot 50 mW
Soldering Temperature x
t 10 s, 1 mm from case Tsd 260 C

Basic Characteristics
Tamb = 25_C
Parameter Test Conditions Symbol Min Typ Max Unit
Supply
pp y Current ((Pin 2)) VS = 5 V, Ev = 0 ISD 0.4 0.6 0.8 mA
VS = 5 V, Ev = 40 klx, sunlight ISH 1.0 mA
Transmission Distance Ev = 0, test signal see fig.7, d 35 m
IR diode TSIP5201, IF = 400 mA
Output Voltage Low (Pin 3) IOSL = 0.5 mA,Ee = 0.7 mW/m2, VOSL 250 mV
f = fo, tp/T = 0.4
Irradiance (30 40 kHz) Pulse width tolerance: Ee min 0.35 0.5 mW/m2
tpi 5/fo < tpo < tpi + 6/fo,
test signal (see fig.7)
Irradiance (56 kHz) Pulse width tolerance: Ee min 0.4 0.6 mW/m2
tpi 5/fo < tpo < tpi + 6/fo,
test signal (see fig.7)
Irradiance Ee max 30 W/m2
Directivity Angle of half transmission distance 1/2 45 deg

Application Circuit
330 W *) +5 V **)
4.7 mF *)
2
>10 kW
TSOP17..
optional
TSUS 5...
3 mC
TSIP 5...

1
96 12108
GND
*) only necessary to suppress power supply disturbances
**) tolerated supply voltage range : 4.5 V<VS <5.5V

2 (6) TELEFUNKEN Semiconductors

Rev. A2, 24-Sep-96
 TSOP17..
Typical Characteristics (Tamb = 25_C unless otherwise specified)
1.0

Ee min Threshold Irradiance ( mW/m2 )

E e min / E e Rel. Responsitivity ( % )

2.0
0.8 f ( E ) = f0
1.6

0.6
1.2

0.4
0.8

0.2
f = f0 "5% 0.4
Df ( 3 dB ) = f0 / 10
0.0 0.0
0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.0 0.4 0.8 1.2 1.6 2.0
94 8143 f / f0 Relative Frequency 94 8147 E Field Strength of Disturbance ( kV / m )

Figure 1. Frequency Dependence of Responsivity Figure 4. Sensitivity vs. Electric Field Disturbances

1.0 10
Ee min Threshold Irradiance ( mW/m2 )
0.9 f = f0
tpo Output Pulse Length (ms)

0.8 1 kHz
0.7 Input burst duration
0.6 10 kHz
0.5 1
l = 950 nm,
0.4 optical test signal, fig.7
0.3
0.2 100 Hz
0.1
0 0.1
0.1 1.0 10.0 100.0 1000.0 10000.0 0.01 0.1 1 10 100 1000
96 12110 Ee Irradiance ( mW/m2 ) 94 9106 DVs RMS AC Voltage on DC Supply Voltage ( mV )
Figure 2. Sensitivity in Dark Ambient Figure 5. Sensitivity vs. Supply Voltage Disturbances

5.0 1.0
E e min Threshold Irradiance (mW/m2 )

E e min Threshold Irradiance (mW/m2 )

^
4.5 Correlation with ambient light sources 0.9
^
( Disturbance effect ) : 1 0W/m2 1.4 klx Sensitivity in dark ambient
4.0 ( Stand.illum.A, T = 2855 K ) 8.2 klx 0.8
3.5 ( Daylight, T = 5900 K ) 0.7
3.0 0.6
2.5 0.5
2.0 0.4
Ambient, l = 950 nm
1.5 0.3
1.0 0.2
0.5 0.1
0 0
0.01 0.10 1.00 10.00 100.00 30 15 0 15 30 45 60 75 90
96 12111 E DC Irradiance (W/m2) 96 12112 Tamb Ambient Temperature ( C )

Figure 3. Sensitivity in Bright Ambient Figure 6. Sensitivity vs. Ambient Temperature

TELEFUNKEN Semiconductors 3 (6)

Rev. A2, 24-Sep-96
TSOP17..
Optical Test Signal
Ee ( IR diode TSIP 5201, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms ) 1.0

T on ,Toff Output Pulse Length (ms)

0.9
0.8
Ton
t 0.7
tpi * 0.6
0.5
T
* tpi w 10/fo is recommended for optimal function 0.4 Toff

0.3
Output Signal 96 12109 0.2 l = 950 nm,
VO optical test signal, fig.8
1) 0.1
"
VOH 7/f0 < td < 15/f0
2) tpo = tpi 6/f0 0
0.1 1.0 10.0 100.0 1000.0 10000.0
VOL
t 96 12114 Ee Irradiance (mW/m2)
td1 ) tpo2 )

Figure 7. Output Function Figure 10. Output Pulse Diagram

Optical Test Signal
Ee 1.0
0.9
Vs = 5 V
0.8
I s Supply Current ( mA )

t 0.7
600 ms 600 ms
0.6
T = 60 ms 0.5
0.4
94 8134
0.3
Output Signal, ( see Fig.10 ) 0.2
VO
0.1
VOH
0
VOL 30 15 0 15 30 45 60 75 90
Ton Toff t 96 12115 Tamb Ambient Temperature ( C )

Figure 8. Output Function Figure 11. Supply Current vs. Ambient Temperature

3.0 1.2
S ( l ) rel Relative Spectral Sensitivity
E e min Threshold Irradiance (mW/m2 )

N=16 1.0
2.5
pulses per burst

2.0 0.8

1.5 0.6

1.0 0.4

0.5 N=32 0.2

0 0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 750 850 950 1050 1150
96 12113 tp/T Duty Cycle 94 8408 l Wavelength ( nm )

Figure 9. Sensitivity vs. Duty Cycle Figure 12. Relative Spectral Sensitivity vs. Wavelength

4 (6) TELEFUNKEN Semiconductors

Rev. A2, 24-Sep-96
 TSOP17..
1.0 1.0
0.9 0.9
Relative Transmission distance

Relative Transmission distance

0.8 0.8
0.7 0.7
0.6 0.6
0.5 0.5
0.4 0.4
0.3 0.3
0.2 0.2
0.1 0.1
0 0
907560453015 0 15 30 45 60 75 90 907560453015 0 15 30 45 60 75 90
95 11339 Angle (deg) 95 11340 Angle (deg)

Figure 13. Vertical Directivity y Figure 14. Horizontal Directivity x

Dimensions in mm

96 12116

TELEFUNKEN Semiconductors 5 (6)

Rev. A2, 24-Sep-96
 TSOP17..
Ozone Depleting Substances Policy Statement

It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs).

The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.

TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of
continuous improvements to eliminate the use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain
such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized
application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of,
directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.

TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

6 (6) TELEFUNKEN Semiconductors

Rev. A2, 24-Sep-96