Sei sulla pagina 1di 6

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

Complementary Silicon Plastic Power Transistors

Designed for use in general purpose amplifier and switching applications.

Features

Collector-Emitter Saturation Voltage - V CE(sat) = 1.2 Vdc (Max) @ I C = 3.0 Adc

Collector-Emitter Sustaining Voltage - V CEO(sus) = 40 Vdc (Min) - TIP31, TIP32

= 60 Vdc (Min) - TIP31A, TIP32A

= 80 Vdc (Min) - TIP31B, TIP32B

= 100 Vdc (Min) - TIP31C, TIP32C

High Current Gain - Bandwidth Product f T = 3.0 MHz (Min) @ I C = 500 mAdc

Compact TO-220 AB Package

Pb-Free Packages are Available*

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector - Emitter Voltage

TIP31, TIP32

TIP31A, TIP32A

ÎÎÎÎÎÎÎÎÎÎÎ

TIP31B, TIP32B

TIP31C, TIP32C

V

CEO

ÎÎ ÎÎÎ 60

40

ÎÎ ÎÎÎ

80

100

ÎÎ

Vdc

ÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Collector-Base Voltage

TIP31, TIP32

ÎÎÎÎÎÎÎÎÎÎÎ

TIP31A, TIP32A

TIP31B, TIP32B

ÎÎÎÎÎÎÎÎÎÎÎ

TIP31C, TIP32C

 

ÎÎ V CB ÎÎÎ 40

ÎÎ ÎÎÎ 80

60

ÎÎ ÎÎÎ

100

ÎÎ Vdc

ÎÎ

ÎÎ

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter-Base Voltage

ÎÎ

V

EB

5.0

ÎÎÎ

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current

Continuous

Peak

ÎÎ

I

C

ÎÎÎ

3.0

5.0

ÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎ

I

B

1.0

ÎÎÎ

ÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

ÎÎÎÎÎÎÎÎÎÎÎ

@ T

C

=

25°C

Derate above 25°C

P

D

ÎÎ ÎÎÎ

ÎÎ ÎÎÎ

40

0.32

ÎÎ

ÎÎ

W

W/°C

Total Power Dissipation

ÎÎÎÎÎÎÎÎÎÎÎ

@

T A

=

25°C

ÎÎÎÎÎÎÎÎÎÎÎ

Derate above 25°C

P

D

ÎÎ ÎÎÎ

2.0

ÎÎ ÎÎÎ

0.016

ÎÎ

W

ÎÎ

W/°C

Unclamped Inductive Load Energy (Note 1)

ÎÎÎÎÎÎÎÎÎÎÎ

ÎÎ

E

32

ÎÎÎ

ÎÎ

mJ

Operating and Storage Junction

ÎÎÎÎÎÎÎÎÎÎÎ

Temperature Range

T

ÎÎ

J

,

T stg

65 to

ÎÎÎ

+

150

°C

ÎÎ

T stg – 65 to ÎÎÎ + 150 ° C ÎÎ http://onsemi.com 3 AMPERE POWER TRANSISTORS

http://onsemi.com

3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40-60-80-100 VOLTS, 40 WATTS

COMPLEMENTARY SILICON 40-60-80-100 VOLTS, 40 WATTS 1 2 3 4 TO-220AB CASE 221A STYLE 1 MARKING

1 2 3

4

TO-220AB

CASE 221A

STYLE 1

MARKING

DIAGRAM

TIP3xxG AYWW
TIP3xxG
AYWW

TIP3xx

= Device Code

xx

= 1, 1A, 1B, 1C,

A

2, 2A, 2B, 2C, = Assembly Location

Y

= Year

WW

= Work Week

G

Pb-Free Package

ORDERING INFORMATION

See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet.

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1. I C = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, V CC = 10 V, R BE = 100

*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

© Semiconductor Components Industries, LLC, 2007

November, 2007 - Rev. 11

1

Publication Order Number:

TIP31A/D

 
 

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

THERMALÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

CHARACTERISTICS

Characteristic

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎ

Max

ÎÎÎÎÎ

ÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction-to-Ambient

ÎÎÎÎ

R

JA

62.5

ÎÎÎÎÎ

ÎÎ

°C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction-to-Case

ÎÎÎÎ

R

JC

3.125

ÎÎÎÎÎ

ÎÎ

°C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (T

C

= 25°C unless otherwise noted)

Characteristic

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Symbol

ÎÎÎÎ

ÎÎ

Min

Max

ÎÎÎ

ÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (I ÎÎÎÎ

Collector-Emitter Sustaining Voltage (Note 2)

TIP31, TIP32

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ

C

B

TIP31B, TIP32B

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ

TIP31C, TIP32C

= 30 mAdc, I

= 0)

TIP31A, TIP32A

V

CEO(sus)

40

80

100

ÎÎ 60 ÎÎÎ

-

ÎÎ ÎÎÎ

-

-

ÎÎ ÎÎÎ

-

ÎÎ

Vdc

ÎÎ

ÎÎ

Collector Cutoff Current (V

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

CE

=

30 Vdc, I

B

=

0)

TIP31, TIP32, TIP31A, TIP32A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

CE

=

B

=

Collector Cutoff Current (V

60 Vdc, I

0)

TIP31B, TIP31C, TIP32B, TIP32C

ÎÎÎÎ

I

CEO

ÎÎ

-

ÎÎ

-

ÎÎÎ

0.3

0.3

ÎÎÎ

ÎÎ

mAdc

ÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ I CES

Collector Cutoff Current

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ

(V

CE

=

40 Vdc, V

EB

=

0)

TIP31, TIP32

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ (V CE = EB = 0) ÎÎÎÎ

(V

CE

=

60 Vdc, V

EB

=

0)

TIP31A, TIP32A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ

(V

CE

=

100 Vdc, V

EB

= 0)

TIP31C, TIP32C

80 Vdc, V

TIP31B, TIP32B

ÎÎÎÎ

ÎÎ

-

-

-

-

ÎÎÎ

ÎÎ ÎÎÎ

200

ÎÎ ÎÎÎ 200

200

ÎÎ ÎÎÎ

200

ÎÎ

Adc

ÎÎ

ÎÎ

ÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (V

BE

= 5.0 Vdc, I

C

= 0)

ÎÎÎÎ

I

EBO

ÎÎ

-

1.0

ÎÎÎ

ÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (Note 2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (I

DC Current Gain (I

C

C

=

=

1.0 Adc, V

3.0 Adc, V

CE

CE

=

=

4.0 Vdc)

4.0 Vdc)

ÎÎÎÎ

h

FE

ÎÎ

25

10

ÎÎÎ

-

50

ÎÎ

-

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector-Emitter Saturation Voltage (I

C

= 3.0 Adc, I

B

= 375 mAdc)

ÎÎÎÎ

V

CE(sat)

ÎÎ

-

ÎÎÎ

1.2

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base-Emitter On Voltage (I

C

=

3.0 Adc, V

CE

= 4.0 Vdc)

ÎÎÎÎ

V

BE(on)

ÎÎ

-

1.8

ÎÎÎ

ÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current-Gain - Bandwidth Product (I

C

= 500 mAdc, V

CE

= 10 Vdc,

f

test

= 1.0 MHz)

f T

ÎÎÎÎ

ÎÎ

3.0

-

ÎÎÎ

ÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small-Signal Current Gain (I

C

= 0.5 Adc, V

CE

= 10 Vdc, f = 1.0 kHz)

ÎÎÎÎ

h

fe

ÎÎ

20

-

ÎÎÎ

ÎÎ

-

2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.

ORDERING INFORMATION

Device

Package

 

Shipping

TIP31

TO-220

50

Units / Rail

TIP31G

TO-220

50

Units / Rail

(Pb-Free)

 

TIP31A

TO-220

50

Units / Rail

TIP31AG

TO-220

50

Units / Rail

(Pb-Free)

 

TIP31B

TO-220

50

Units / Rail

TIP31BG

TO-220

50

Units / Rail

(Pb-Free)

 

TIP31C

TO-220

50

Units / Rail

TIP31CG

TO-220

50

Units / Rail

(Pb-Free)

 

TIP32

TO-220

50

Units / Rail

TIP32G

TO-220

50

Units / Rail

(Pb-Free)

 

TIP32A

TO-220

50

Units / Rail

TIP32AG

TO-220

50

Units / Rail

(Pb-Free)

 

TIP32B

TO-220

50

Units / Rail

TIP32BG

TO-220

50

Units / Rail

(Pb-Free)

 

TIP32C

TO-220

50

Units / Rail

TIP32CG

TO-220

50

Units / Rail

(Pb-Free)

 

P D , POWER DISSIPATION (WATTS)

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

T C

40

30

20

10

0

T A

4.0

3.0

2.0

1.0

0

T C T A 0 20 40 60 80 100 120 140 160
T
C
T
A
0
20
40
60
80
100
120
140
160

T, TEMPERATURE ( °C)

Figure 1. Power Derating

TURN-ON PULSE V CC APPROX R C +11 V SCOPE V in V in 0
TURN-ON PULSE
V
CC
APPROX
R
C
+11 V
SCOPE
V
in
V in 0
R
B
V
EB(off)
t
1
C jd << C eb
t
3
APPROX
+11 V
- 4.0 V
t 1 ≤ 7.0 ns
100 < t 2 < 500 s
V
t 3 < 15 ns
in
t
2
DUTY CYCLE ≈ 2.0%
APPROX - 9.0 V
TURN-OFF PULSE
t, TIME ( s)

R B and R C VARIED TO OBTAIN DESIRED CURRENT LEVELS.

Figure 2. Switching Time Equivalent Circuit

2.0 I C /I 10 B = 1.0 T J = 25°C 0.7 t r
2.0
I C /I
10
B =
1.0
T J = 25°C
0.7
t r @
V CC = 30 V
0.5
0.3
t r @
V CC = 10 V
0.1
0.07
t d
@ V EB(off) = 2.0 V
0.05
0.03
0.02
0.03 0.05 0.1
0.3
0.5
1.0 3.0

I C , COLLECTOR CURRENT (AMP)

Figure 3. Turn-On Time

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

1.0 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 0.1 P (pk) = r(t)
1.0
0.7
D = 0.5
0.5
0.3
0.2
0.2
0.1
0.1
P
(pk)
=
r(t) R JC
0.05
Z JC(t)
0.07
R JC (t) = 3.125°C/W MAX
0.05
D
CURVES APPLY FOR POWER
0.02
PULSE TRAIN SHOWN
0.03
t
1
READ TIME AT t
t
1
2
0.02
0.01
T J(pk) - T C
= P (pk) Z JC(t)
DUTY
CYCLE, D = t 1 /t 2
SINGLE PULSE
0.01
0.01
0.02
0.05
1.0
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0 k
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

t, TIME (ms)

Figure 4. Thermal Response

10 5.0 100 s 5.0 ms 2.0 1.0 ms SECONDARY BREAKDOWN 1.0 LIMITED @ T
10
5.0
100
s
5.0
ms
2.0
1.0
ms
SECONDARY BREAKDOWN
1.0
LIMITED @ T J ≤ 150°C
THERMAL LIMIT @ T C = 25°C
0.5
(SINGLE PULSE)
BONDING WIRE LIMIT
TIP31A, TIP32A
0.2
CURVES APPLY
TIP31B, TIP32B
BELOW RATED V CEO
TIP31C, TIP32C
0.1
5.0
10
20
50
100
I C , COLLECTOR CURRENT (AMP)

V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 5. Active Region Safe Operating Area

There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 150°C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150°C. T J(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.

3.0 I B1 = I 2.0 B2 t s ′ I C /I B =
3.0
I B1 = I
2.0
B2
t
s ′
I C /I B = 10
t s ′ = t s - 1/8 t f
1.0
t f @ V CC = 30 V
T J = 25°C
0.7
0.5
0.3
=
10
V
t f @ V CC
0.2
0.1
0.07
0.05
0.03
0.03 0.05 0.07 0.1
0.2
0.3
0.5
0.7
1.0
2.0
3.0
t, TIME ( s)μ
CAPACITANCE (pF)

I C , COLLECTOR CURRENT (AMP)

Figure 6. Turn-Off Time

300 T J = + 25°C 200 100 C eb 70 50 C cb 30
300
T J = + 25°C
200
100
C eb
70
50
C cb
30
0.1
0.2 0.3
0.5
1.0
2.0
3.0
5.0
10 20
30 40

V R , REVERSE VOLTAGE (VOLTS)

Figure 7. Capacitance

R BE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS)

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

500 300 T = 150°C V = 2.0 V J CE 25°C 100 70 -
500
300
T
= 150°C
V
= 2.0 V
J
CE
25°C
100
70
-
55°C
50
30
10
7.0
5.0
0.03 0.05 0.07
0.1 0.3
0.5
0.7
1.0
3.0
h FE , DC CURRENT GAIN
V CE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

I C , COLLECTOR CURRENT (AMP)

Figure 8. DC Current Gain

1.4 T J = 25°C 1.2 1.0 0.8 V BE(sat) @ I C /I B
1.4
T J = 25°C
1.2
1.0
0.8
V BE(sat) @ I C /I B = 10
0.6
V
= 2.0 V
BE
@ V CE
0.4
0.2
10
V CE(sat) @ I C /I B =
0
0.003 0.005
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0
V, VOLTAGE (VOLTS)
V , TEMPERATURE COEFFICIENTS (mV/ C)°θ

I C , COLLECTOR CURRENT (AMPS)

Figure 10. “On” Voltages

3 10 V CE = 30 V 2 10 T J = 150°C 1 10
3
10
V CE = 30
V
2
10
T
J = 150°C
1
10
0
10
100°C
-1
REVERSE
FORWARD
10
-2
10
25°C
I
CES
-3
10
- 0.4
- 0.3
- 0.2
-
0.1
0
+ 0.1
+
0.2
+
0.3
+ 0.4
+
0.5
+ 0.6
C , COLLECTOR CURRENT ( A)μI

V BE , BASE-EMITTER VOLTAGE (VOLTS)

Figure 12. Collector Cut-Off Region

2.0

T J = 25°C I C = 0.3 A 1.0 A 3.0 A 0 1.0
T J = 25°C
I C = 0.3
A 1.0 A
3.0 A
0
1.0
2.0
5.0
10 20
50
100
200
500
1000
I
, BASE CURRENT (mA)
B

1.6

1.2

0.8

0.4

Figure 9. Collector Saturation Region + 2.5 + 2.0 *APPLIES FOR I C /I B
Figure 9. Collector Saturation Region
+ 2.5
+ 2.0
*APPLIES
FOR I C /I B
≤ h FE /2
= - 65°C TO
+ 150°C
+ 1.5
T J
+ 1.0
+ 0.5
* VC FOR
V CE(sat)
0
- 0.5
- 1.0
- 1.5
VB FOR
V BE
- 2.0
- 2.5
0.003 0.005
0.01
0.02
0.05
0.1
0.2 0.3
0.5
1.0
2.0 3.0

I C , COLLECTOR CURRENT (AMP)

Figure 11. Temperature Coefficients

7 10 V CE = 30 V I C = 10 x I CES 6
7
10
V CE = 30 V
I C = 10 x I CES
6
10
I C ≈ I
5
CES
10
4
10
I
= 2 x I CES
C
3
10
(TYPICAL I CES VALUES
OBTAINED FROM FIGURE 12)
2
10
20
40
60
80
100
120
140
160

T J , JUNCTION TEMPERATURE (°C)

Figure 13. Effects of Base-Emitter Resistance

TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP)

B 4 Q A 1 23 H K Z L V G D N
B
4
Q
A
1 23
H
K
Z
L
V
G
D
N

PACKAGE DIMENSIONS

TO-220

CASE 221A-09

F

ISSUE AE SEATING -T- PLANE C T S U R J
ISSUE AE
SEATING
-T-
PLANE
C
T
S
U
R
J

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. DIMENSION Z DEFINES A ZONE WHERE ALL

BODY AND LEAD IRREGULARITIES ARE

ALLOWED.

 

INCHES

MILLIMETERS

DIM

MIN

MAX

MIN

MAX

A

0.570

0.620

14.48

15.75

B

0.380

0.405

9.66

10.28

C

0.160

0.190

4.07

4.82

D

0.025

0.035

0.64

0.88

F

0.142

0.161

3.61

4.09

G

0.095

0.105

2.42

2.66

H

0.110

0.155

2.80

3.93

J

0.014

0.025

0.36

0.64

K

0.500

0.562

12.70

14.27

L

0.045

0.060

1.15

1.52

N

0.190

0.210

4.83

5.33

Q

0.100

0.120

2.54

3.04

R

0.080

0.110

2.04

2.79

S

0.045

0.055

1.15

1.39

T

0.235

0.255

5.97

6.47

U

0.000

0.050

0.00

1.27

V

0.045

---

1.15

---

Z

---

0.080

---

2.04

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

LITERATURE FULFILLMENT:

 Literature Distribution Center for ON Semiconductor  P.O. Box 5163, Denver, Colorado 80217 USA  Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada  Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada  Email: orderlit@onsemi.com

N. American Technical Support: 800-282-9855 Toll Free  USA/Canada Europe, Middle East and Africa Technical Support:

 Phone: 421 33 790 2910 Japan Customer Focus Center  Phone: 81-3-5773-3850

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your loca Sales Representative

http://onsemi.com

6

TIP31A/D