MODELS 2017 COMPLETE MODEL ANSWER

Chapter (8)

Exam (1)

Q1
A. What is meant by each of the following?
a. The law of mass action in semi-conductors.
The product of electrons concentration and holes concentration in semiconductor remains constant and
doesn't depend on the type of impurity.
b. Electronic components.
The building blocks of all electronic circuits work with.
c. The depletion region in diode.
A intermediate region in the PN junction, empty of free electrons and holes, only positive ions in the N-
crystal and negative ions in the P-type crystal.
d. The diffusion current in diode.
The transfer of electrons from N-type crystal to P-type crystal.
e. The thermal dynamic equilibrium in pure silicon crystal.
The state at which the rate of bond breaking equals the rate of bond mended, so the concentration of
electrons and holes remains constant.
B. First; compare between:
a. P-type crystal [trivalent atoms, like; Al, B, Ga] and N-type crystal [pentavalent atoms, like; P, AS, Sb].
b. Silicon crystal [electric conductivity increases, as more bonds broken, so the concentration of electrons
and holes increases] and metallic ohmic resistance [electric conductivity decreases, as the amplitude of
vibrating atoms increases as well as its resistivity increases].
c. Forward connection [P-crystal is joined with the positive pole, while N-crystal is joined with the negative
pole, current flows] and backward connection [N-crystal is joined with the positive pole, while P-crystal
is joined with the negative pole, almost no current].
Second; give reasons for:
a. The work of PN junction behaves as a switch in the circuit.
As it allows the passage of current (switch ON) as the connection is forward, and prevents the flow of
current where the connection is backward (switch OFF).
b. Ohmmeter can be used to check the function ability of the PN junction.
As the measured resistance of diode in forward connection is small, while in backward connection it is
very high.
c. The base thickness in transistor is thin.
So, little amount of carrier charges passes through it and most of emitter current to flow through the
collector.
C. As the current of collector in transistor is 700 mA, and the base current is 7 mA, calculate:
700
a. The current gain (e) = = 7
= 100.

100
b. The distribution factor (e) = = = 0.99.
1+ 101
c. The emitter current (IE) = IC + IB = 700 + 7 = 707 mA.

Q2
A. Mention the results of
a. Joining the PN junction with a suitable a.c source.
Current is rectified, half wave rectification.
b. Joining the PN junction a forward connection.
Current flows, as the potential barrier and depletion region decrease.
c. Doping a pure silicon crystal with penta-valent atoms.

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The crystal becomes an N-type crystal semi-conductor, due to the increase of free electrons
concentration over the concentration of holes.
d. Raising the temperature of pure semiconductor crystal.
Electric conductivity increases, as more bonds are broken, increasing the concentration of free charges.
e. The transfer of free electrons to P region and holes to N region in the PN junction.
A depletion region is formed in between the crystal, N-type crystal gains positive potential while P-type
crystal gains negative potential
B. First; what is meant by ?
a. The amplification of current in transistor is 99.
The ratio between the collector current to the base current is 99.
b. The potential barrier in diode is 0.3 V.
The least voltage at the depletion region that prevents the flow of more electrons and holes in diode is
0.3 volt.
c. The distribution factor of transistor is 0.98.
The ratio between the collector current to the emitter current is 0.98.
Second; name the logic gate which fulfil the following conditions:
a. The gate which has only one input. NOT (inverter)
b. The gate of LOW output if its input is HIGH and vice-versa. NOT (inverter)
c. The gate of two inputs its output is HIGH only if all its inputs are HIGH. AND

C. As the concentration of free electrons and holes in a pure semiconductor crystal is 110 10 cm-3, then on
adding traces of Boron at concentration of 1012, calculate:
2 ( )
a. The concentration of electron in the doped crystal. n = =
= 108 cm-3.

b. The concentration of holes in the doped crystal. P = 1012 cm-3.
c. Mention the type of the formed crystal, N-type or P-type. P-type crystal.

Q3

A. Show only with drawing

a. The symbol of diode in electric circuit.
b. The forward connection in PN junction.

c. The backward connection in PN junction.

d. The symbol of NPN transistor in electric circuit.

e. The symbol of NOT gate in electric circuit.

B. First; the given figure presents a diode joined in series with a lamp:
a. Show on the diagram the way of joining a battery at the points (a & b)
to illuminate the lamp, explain your work.
As the connection of battery as forward connection, decreases the potential barrier, depletion region as
well as the resistance of the diode, allowing the flow of current, it acts as a switch ON, lamp lights.
b. On replacing the battery with an a.c source name the type of current flowing through the lamp,
explain your answer.
The passing current is half wave rectified current, as current flows through the diode in a half cycle
where the connection if forward, but not htrough the other half where the conncetion is backward.

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Second; the mathematical relation for the law of mass action in the pure semiconductors:
[The product of free electrons concentration and the free holes concentration equals constant, doesn't
depend on the type of impurity atom, n.p = 2 ],
Its form in the following cases:
2
a. An N-type crystal. P , n =

2
b. P-type crystal. n + ,P= +

C. Calculate the passing current intensity through the resistance 40 in both of given two circuits, neglecting
the internal resistance of the source and the resistance of diodes.

Figure (1); I = = = 0.1 A.
+( )
+

Figure (2); I =
= +
= 0.06 A.

Q4

A. Knowing that silicon is tetravalent element, it is a semiconductor, answer the following questions:
a. What is the number of valence electrons in the impure atoms added to silicon crystal to obtain a P-
type crystal? three electrons
b. Is doping silicon crystal in the previous case makes it positively charged? Explain your answer.
No, the crystal remains neutral, as a neutral impure atom replaces another silicon atom, and the
concentration of positive ions equals the concentration of negative ions [P = n + ].
c. Name the dominant carrier charges in the P-type crystal. Positive holes
d. What is the number of valence electrons in the impure atoms added to silicon crystal to obtain a N-
type crystal? five
e. Is doping silicon crystal in the previous case makes it negatively charged? Explain your answer.
No, the crystal remains neutral, as a neutral impure atom replaces another silicon atom, and the
concentration of positive ions equals the concentration of negative ions [n = p + +].

B. First; when could each of the following equals zero?

a. The collector current in an NPN transistor when being used as a switch.
As the input base potential is LOW (base-emitter connection is backward)
b. The output voltage (VCE) in an NPN transistor when being used as a switch.
As the input base potential is HIGH (base-emitter connection is forward)

Second; prove that: e = +
.

As; e = , IC = e.IB , IE = IC + IB = IB (e + 1)

.
e = = =
( +1) ( +1)
C. Complete the given truth table:

INPUT (A) INPUT (B) X Y Z OUTPUT

0 0 0 0 1 0
0 1 1 0 1 1
1 0 1 0 1 1
1 1 1 1 0 0

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Exam (2)

Q1
A. What is meant by?
a. Semiconductors; they are elements of group 4A in the periodic table, like; silicon and germanium, their
electrical conductivity increases by raising temperature contrary with metals and become perfect
insulator at zero kelvin.
b. Doping of semiconductors; adding traces from atoms of groups 3A or 5A of the periodic table to the
crystal of semi-conductor to improve its electrical conductivity.
c. Potential barrier in diode; the least voltage at the depletion region in diode that prevents the flow of
more electrons or holes.
d. Forward bias in diode; the connection of diode with a battery where the P-crystal is joined with the
positive pole, while the N-crystal is joined with the negative pole, that the potential barrier decreases, as
well as both of depletion region and resistance allowing the passage of electric current.
e. Logic gates; electronic components in modern electronic circuits, whose work depends on the Boolean
algebra.

B. First; choose the correct answer:

a. In the given figure, which incidence could be happened?
i. Both lamps illuminate.
ii. Only (A) illuminate.
iii. Only (B) illuminate.
b. Which of the following graphical relations presents the
current voltage relation for a PN junction?

c. The dominant carrier charges in the N-type crystal are

i. Free electrons.
ii. Negative ions.
iii. Positive holes.
iv. Positive ions.
Second; give reasons for:
a. Silicon crystal contains impure Boron atoms is called P-type crystal.
As the concentration of positive holes is more than the concentration of free electrons.
b. In transistor, most of emitter current goes to collector, and the base current is very small.
Due to the smaller thickness of base, that small carrier charges flow through it.
c. The PN junction is used to rectify the a.c.
As it permits the flow of electric current in the half cycle of forward connection and prevents its flow in
the half cycle of backward connection.

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C. As the concentration of free electrons and holes in a pure semiconductor crystal at 20 oC is 11010 cm-3,
then on adding traces of Phosphorus at concentration of 1012, calculate:
a. The concentration of free electrons, and holes in the doped crystal.
2 (1010 )2
n = ND+ = 1012 cm-3, P = + = 1012
= 108 cm-3.

b. The concentration of aluminum atoms added to the crystal to obtain a pure crystal at 20oC = 1012 cm-3.

Q2
A. Mention the results for each of the following.
a. Breaking one covalent bond in the semiconductor crystal.
Electric conductivity increases, due to the availability of more carrier charges "electrons and holes".
b. Doping a pure silicon crystal with atoms of Boron.
Electric conductivity increases, the crystal is P-type as holes concentration is more than the free
electrons concentration.
c. Joining the base in an NPN transistor with a negative potential as emitter is common.
The transistor acts as a switch OFF condition, and almost no current flows.
d. Joining a PN junction as reverse bias.
Almost no current flows, as the depletion region, potential barrier and resistance increase.
e. Doping a pure silicon crystal with atoms of group 5 in the periodic table of elements.
Electric conductivity increases, the crystal is N-type as free electrons concentration is more than the
holes concentration.
B. First; mention one use for:
a. Diode; acts as a switch, rectifier for a.c.
b. Transistor. acts as a switch, amplifier.
c. Logic gates. In modern electronic circuits for arithmetic and logic operations.
Second; name the logic gate which fulfils the following:
a. The gate of two inputs, giving HIGH output as one input is HIGH while the other is LOW. OR
b. The gate of two inputs, giving HIGH output as both inputs are HIGH. AND
c. The logic gate of LOW output if its only input is HIGH. NOT
C. In the given circuit, a battery of e.m.f 6 volt is joined at the points a, b.
Calculate the reading of ammeter in the following cases:
a. Va > Vb. Diode connection is forward,
Rtotal = 6 + [10-1 + 10-1 + 20-1]-1 = 6 + 4 = 10 ,
6
I total = = = 0.6 A.
10
0.6 4
Reading of ammeter = = = 0.24 A.
10

b. Vb > Va. Diode connection is backward,

Rtotal = 6 + [10-1 + 20-1]-1 = 6 + 6.66 = 12.66 ,
6
I total = = = 0.47 A.
12.66
0.47 6.66
Reading of ammeter = = = 0.315 A.
10

Q3
A. Write the scientific term:
a. An intermediate region inside the PN junction has no free charges. Depletion region
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b. The least voltage at the depletion region of a PN junction that prevents the transfer of more carrier
charges. Potential barrier of diode
c. The process of adding impure atoms of group 3A or 5A in the periodic table to semiconductor crystal
to increase its electrical conductivity. doping
d. The impure semiconductor crystal resulted from doping a pure crystal with pentavalent atoms. N-type
e. The ratio between collector current to base current in transistor, when being joined as common
emitter. Current gain (e)
B. First; mention the types of each of the following:
a. Electronic components (due to structure). Simple complex more complicated.
b. Joining the PN junction in an electric circuit. Forward backward.
c. Electronics being used in T.V transmission and receiving. Analog digital
Second; convert the following binary codes into its equivalent decimal codes:
a. |10001|2 = (124) + (023) + (022) + (021) + (120) = 16 + 1 = 17.
b. |10100|2 = (124) + (023) + (122) + (021) + (020) = 14 + 4 = 20.
c. |1010011|2 = (126) + (025) + (124) + (023) + (022) + (121) + (120) = 64 + 16 + 2 + 1 = 83.
C. For an NPN transistor, the collector current is 20 A, and the amplification of its current e = 50, calculate:
50
a. The distribution factor e = 1+ e = 50 +1
= 0.98.
e
C
b. The base current. IB = e
=
= 0.4 A.
c. The emitter current. IE = IC + IB = 20 + 0.4 = 20.4 A.

Q4
A. Complete the following table depending on the given figure for a PN junction:

a. Name the region (Z). Depletion region

b. Mention the type of the semiconductor (X) and (Y). X is N-type, Y is p-type
c. Which pole from a battery is joined with terminal (-ve) pole
(4) in case of forward connection?
d. Name the element from which the diode is made. Silicon or germanium
B. First; using the given figure, what happens in the following cases?
a. As the element is copper.
Reading of ammeter decreases, as conductors lose their conductivity
by heating because of the increase of amplitude of vibrating molecules.
b. As the element is silicon.
Reading of ammeter increases, as semi-conductors improve their conductivity by heating because of
breaking more bonds, and the availability of higher concentration of electrons and holes.
Second; complete the following truth table, providing all possible inputs:

INPUT (A) INPUT (B) OUTPUT (D)

0 0 1
0 1 0
1 0 0
1 1 1
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C. The following table relates the concentration of the free electrons and the reciprocal of acceptor ions in a
P type crystal, at constant temperature.
n- 106 1 2 2.5 5 10
0.01 0.02 0.025 0.05 0.1

cm3

Plot the graphical relation

between the concentration of
free electrons on vertical axis,
and the reciprocal of acceptor

ions on the horizontal axis,

then use the graph to

determine:
a. The concentration of electrons in the pure crystal at similar temperature
(101) 106
n = = (0.10.01)
= 108 = 1 104 cm-3.

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