PLASTIC SILICON INFRARED

PHOTOTRANSISTOR

QSC112 QSC113 QSC114

PACKAGE DIMENSIONS
0.116 (2.95)

REFERENCE
SURFACE

0.193 (4.90)
0.052 (1.32)
0.032 (0.082)

0.030 (0.76)
NOM

0.800 (20.3)
MIN

0.050 (1.27) EMITTER

SCHEMATIC
0.100 (2.54)
NOM
COLLECTOR

0.155 (3.94)

0.018 (0.46)
SQ. (2X)
NOTES:

1. Dimensions for all drawings are in inches (mm). EMITTER

2. Tolerance of .010 (.25) on all non-nominal dimensions
unless otherwise specified.

DESCRIPTION
The QSC112/113/114 is a silicon phototransistor encapsulated in an infrared transparent, black T-1 package.

FEATURES
Tight production distribution.
Steel lead frames for improved reliability in solder mounting.
Good optical-to-mechanical alignment.
Plastic package is infrared transparent black to attenuate visible light.
Mechanically and spectrally matched to the QECXXX LED.
Black plastic body allows easy recognition from LED.

2001 Fairchild Semiconductor Corporation

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 PLASTIC SILICON INFRARED
PHOTOTRANSISTOR

QSC112 QSC113 QSC114

ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise specified)

Parameter Symbol Rating Unit

Operating Temperature TOPR -40 to +100 C
Storage Temperature TSTG -40 to +100 C
Soldering Temperature (Iron)(2,3,4) TSOL-I 240 for 5 sec C
Soldering Temperature (Flow)(2,3) TSOL-F 260 for 10 sec C
Collector-Emitter Voltage VCE 30 V
Emitter-Collector Voltage VEC 5 V
Power Dissipation(1) PD 100 mW

1. Derate power dissipation linearly 1.33 mW/C above 25C.

2. RMA flux is recommended.
3. Methanol or isopropyl alcohols are recommended as cleaning agents.
4. Soldering iron 1/16 (1.6mm) minimum from housing.
5. ! = 880 nm, AlGaAs.

ELECTRICAL / OPTICAL CHARACTERISTICS (TA = 25C)

PARAMETER TEST CONDITIONS SYMBOL MIN TYP MAX UNITS

Peak Sensitivity Wavelength !PS 880 nm
Reception Angle " 8 Deg.
Collector-Emitter Dark Current VCE = 10 V, Ee = 0 ICEO 100 nA
Collector-Emitter Breakdown IC = 1 mA BVCEO 30 V
Emitter-Collector Breakdown IE = 100 A BVECO 5 V
On-State On-State Collector QSC112 1 4
Ee = 0.5 mW/cm2,
On-State On-State Collector QSC113 IC(ON) 2.40 9.60 mA
VCE = 5 V(5)
On-State On-State Collector QSC114 4.00
Ee = 0.5 mW/cm2,
Saturation Voltage VCE(sat) 0.4 V
IC = 0.5 mA(5)
Rise Time VCC = 5 V, RL = 100 # tr 5.0
s
Fall Time IC = 2 mA tf 5.0

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 PLASTIC SILICON INFRARED
PHOTOTRANSISTOR

QSC112 QSC113 QSC114

Figure 1. Light Current vs. Radiant Intensity
102
VCE = 5V Figure 2. Angular Response Curve
GaAs Light Source 90
100 80
110 70
120 60
IC(ON) - Light Current (mA)

130 50
101
140 40

150 30

160 20
100

170 10

180 0
1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 1.0
-1
10
0.1 1

2
Ee - Radiant Intensity (mW/cm )

Figure 3. Dark Current vs. Collector - Emitter Voltage Figure 4. Light Current vs. Collector - Emitter Voltage
101 101

Ie = 1mW/cm 2

Ie = 0.5mW/cm 2
I L - Normalized Light Current

100
I CEO - Dark Current (nA)

100 Ie = 0.2mW/cm 2
Ie = 0.1mW/cm 2

10-1

10-1
10-2 Normalized to:
VCE = 5V
Ie = 0.5mW/cm 2
TA = 25 oC
10-3 10-2
0 5 10 15 20 25 30 0.1 1 10

VCE - Collector-Emitter Voltage (V) VCE - Collector-Emitter Voltage (V)

Figure 5. Dark Current vs. Ambient Temperature

104
Normalized to:
VCE = 25V
o VCE = 25V
I CEO - Normalized Dark Current

103 TA = 25 C

VCE = 10V
102

101

100

10-1
25 50 75 100

o
TA - Ambient Temperature ( C )

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 PLASTIC SILICON INFRARED
PHOTOTRANSISTOR

QSC112 QSC113 QSC114

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF
OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD
SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body,or (b) support or sustain life,
and (c) whose failure to perform when properly
used in accordance with instructions for use provided
in labeling, can be reasonably expected to result in a
significant injury of the user.
2. A critical component in any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.

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