EE368 POWER

ELECTRONICS
Switching Dissipation and Power Losses
 2

I +
Ideal Switch V
-
1. Turns on & off instantaneously initiates by control signal of nil
energy (no gate drives required)
2. Zero switching power dissipation (no overlap of I & V)
3. When switch is on, it offers zero impedance to conduction of
any current (zero voltage drop across switch & infinite current
conduction capability)
4. When switch is off, it
i. offers infinite impedance to current conduction (zero leakage
current)
ii. blocks any voltage (infinite breakdown voltage)
iii. is immune to sudden voltage changes dV/dt (remains off)
 3

Switching Dissipation (LOSS) Safe Operating Area

RL-load (hard load) R-load (soft load)

I ON I max I ON I max
Iload SOA Iload
SOA

OFF
OFF
V V
Vbus Vmax Vbus Vmax

TYPICAL SWITCHING WAVEFORM

toff Vbus ton
Iload Iload

t t
SWITCH OFF SWITCH ON
 4

t off Vbus
Woff v i d t
0
t t
where v Vbus ; i I max 1
t off t off
W
t
t o ff
t t
off Vbus

I max 1 Imax
t t off
0 off
Vbus I max
t o ff
t 2
t d t

t off 0 t off t

to ff
toff
Vbus I max t2 t3

t off
2 3t off
0
Vbus I max t off [J]
p.4 SHL
6
 5

Similarly,
t on Vbus I max t on
Won v i d t [J]
0 6
Therefore, total switching dissipation = (Won + Woff ) fs [W]
 6

RL load: Simplified Waveform p. 5 SHL

Vbus
Imax

toff ton
t off t
W off Vbus Imax 1 dt
0 t off
t 2 t off
Vbus Imax t off
Vbus Imax t [J]
2 t off 0 2

t on
t Vbus I max t on
Won I max Vbus 1 d t [J]
0 t on 2
Comparison between R and RL loads

R load RL load

Switching Vbus I load (ton + toff ) f Vbus I load (ton + toff ) f

Loss 6 2
Peak 0.25 Vbus Iload Vbus Iload
power
 8

Tutorial: Calculate the switching energy loss during turn-on

and turn-off periods as shown. Calculate the average power
loss if the switching frequency is 10 kHz. What is the max.
instantaneous power dissipated?
200
I 100
100 V 100 100
50

toff = 5s ton = 2 s

toff Vmax Imax toff
t t
Woff = Vmax
toff {
Imax 1- }
toff
=
6
0 200 100 5 10-6
= = 16.67 mJ
6
Vmax Imax t on 100 50 2 10-6
Won = = = 1.67 mJ
6 6
 9

Average switching power loss = Ps = (Won + Woff) fs

= (16.17 + 1.67 )10-3 10103 = 183.4 W
Instantaneous power = Pon (t) = Vmax (1- t/ton) Imax (t/ton)
= Vmax Imax (t - t2/ton )
(1)
ton
For maximum Pon, dPon(t)/dt and set to zero
d Pon ( t ) Vmax I max 2t
1 0
dt t on t on
1
t t on
2
Substitute t into equation (1),
Pon max (t) = Vmax Imax = 10050 /4 = 1250 W
Similarly,
Poff max (t) = Vmax Imax = 200100 /4 = 5000 W
 10

Tutorial: A circuit designer has to decide which of the following two

devices is suitable for his chosen application described as follows:
Supply voltage 400 V d.c. rail
Maximum load current 8A
Duty Cycle 50%
Switching frequency 20 kHz
Typical rise/fall time 100 ns
Maximum junction temp. 150C
Typical Casing temp. 110C
Typical ambient temp.40 C
Device available : 1. MOSFET -IRFP450 2. IGBT - IRGP430
i. Using the data sheets provided, calculated the conduction loss for
each of the two devices. Show which figures you have consulted
to come up with your answers
ii. Determine the switching losses for each of the two devices. Also
determine the total incidental dissipation for each device, neglect
other minor losses.
In view of the results calculated, which device would you recommend
for this particular application. Justify your answer.
11
12
13
14
15
 16

Solutions: Conduction loss calculation

For MOSFET, PC = ID2 RDS (on) [@110C] duty cycle
Or = ID VDS [@ID = 8A, TC = 110 C]
For IGBT, PC = VCE(sat) IC duty cycle

Using the data sheet provided,

MOSFET
Fig. 4(IRFP450) RDS(on) [@110 C] = 2 RDS(on) [@25C] = 2 0.4
= 0.8 W
PC (MOSFET) = 82 0.8 0.5 = 25.6 W
Alternative method, use Fig. 2, VDS [@ID = 8A, TC = 110 C] = 6V
PC (MOSFET) = 8 6 0.5 = 24 W

IGBT
Fig. 5(IRGP430U), VCE(sat) = 1.8 V [@ID = 8A, TC =110 C]
PC (IGBT) = 1.8 8 0.5 = 7.2 W
 17

Switching loss calculation

MOSFET:
PSW = V I (tr + tf) f = 0.5 400 8 (200 10-9 ) 20 103 = 6.4W

IGBT: (Fig.11, Fig. 10, IRGP430U)

PSW = Ets f = 0.38 mJ 20 kHz = 7.6 W

Total dissipation calculation

For MOSFET, PD = PC + PSW = 24 + 6.4 = 30.4 W

For IGBT, PD = PC + PSW = 7.2 + 7.6 = 14.8 W

Conclusion
In view of the comparison, IGBT deemed to be the better choice as its
total incidental dissipation is only halved of that of the MOSFET in this
particular application.
 18

Tutorial: A circuit designer has to decide which of the following two

devices is suitable for his chosen application described as follows:
Supply voltage 400 V d.c. rail
Maximum load current 8A
Duty Cycle 50%
Switching frequency 20 kHz
Typical rise/fall time 100 ns
Maximum junction temp. 150C
Typical Casing temp. 110C
Typical ambient temp.40 C
Device available : 1. MOSFET -IRFP460 2. IGBT - IRGP440UD2
i. Using the data sheets provided, calculated the conduction loss for
each of the two devices. Show which figures you have consulted
to come up with your answers
ii. Determine the switching losses for each of the two devices. Also
determine the total incidental dissipation for each device, neglect
other minor losses.
In view of the results calculated, which device would you recommend
for this particular application. Justify your answer.
19
20
21
22
23
24
25
 26

Solutions: Conduction loss calculation

For MOSFET, PC = ID2 RDS (on) [@110C] duty cycle
Or = ID VDS [@ID = 8A, TC = 110 C]
For IGBT, PC = VCE(sat) IC duty cycle

Using the data sheet provided,

MOSFET
Fig. 4(IRFP460) RDS(on) [@110 C] = 2 RDS(on) [@25C] = 2 0.27
= 0.54 W
PC (MOSFET) = 82 0.54 0.5 = 17.28 W
Alternative method, use Fig. 2, VDS [@ID = 8A, TC = 110 C] = 5V
PC (MOSFET) = 8 5 0.5 = 20 W

IGBT
Fig. 5(IRGP440UD2), VCE(sat) = 1.8 V [@ID = 8A, TC =110 C]
PC (IGBT) = 1.8 8 0.5 = 7.2 W
 27

Switching loss calculation

MOSFET:
PSW = V I (tr + tf) f = 0.5 400 8 (200 10-9 ) 20 103 = 6.4W

IGBT: (Fig.11, Fig. 10, IRGP430U)

PSW = Ets f = 1.0 mJ 20 kHz = 20 W

Total dissipation calculation

For MOSFET, PD = PC + PSW = 20 + 6.4 = 26.4 W

For IGBT, PD = PC + PSW = 7.2 + 20 = 27.2 W

Conclusion
In view of the comparison, either devices will be suitable for use in this
particular application, as there are no significant differences in the power
switching dissipation of the two different devices
 28

Losses (W)
40
30
20 Switching
Switching
10 Conduction
Conductio
MOSFET n IGBT

Fig. 1: Power losses in IRFP460 MOSFET and

a IRGPC440UD2 IGBT at 8.0A @ 20 kHz