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IRLB8721PbF
Applications HEXFET Power MOSFET
l Optimized for UPS/Inverter Applications
l High Frequency Synchronous Buck
VDSS RDS(on) max Qg (typ.)
Converters for Computer Processor Power :
30V 8.7m @VGS = 10V 7.6nC
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification D
for Telecom and Industrial Use
Benefits S
D
l Very Low RDS(on) at 4.5V VGS G
l Ultra-Low Gate Impedance
TO-220AB
l Fully Characterized Avalanche Voltage IRLB8721PbF
and Current
l Lead-Free
G D S
Gate Drain Source
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy d 98 mJ
IAR Avalanche Current c 25 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current 62 MOSFET symbol
(Body Diode) A showing the
ISM Pulsed Source Current 250 integral reverse
(Body Diode)c p-n junction diode.
VSD Diode Forward Voltage 1.0 V TJ = 25C, IS = 25A, VGS = 0V e
trr Reverse Recovery Time 16 24 ns TJ = 25C, IF = 25A, VDD = 15V
Qrr Reverse Recovery Charge 14 21 nC di/dt = 200A/s e
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IRLB8721PbF
1000 1000
VGS VGS
TOP 10V TOP 10V
9.0V 9.0V
ID, Drain-to-Source Current (A)
10 10 3.0V
3.0V
60s PULSE WIDTH 60s PULSE WIDTH
Tj = 25C Tj = 175C
1 1
0.1 1 10 100 0.1 1 10 100
1000 2.0
RDS(on) , Drain-to-Source On Resistance
ID = 25A
VGS = 10V
ID, Drain-to-Source Current (A)
100
1.5
(Normalized)
10
TJ = 175C
TJ = 25C
1.0
1
VDS = 15V
60s PULSE WIDTH
0.1
0.5
0.0 2.0 4.0 6.0 8.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
10000 14
VGS = 0V, f = 1 MHZ ID= 25A
Ciss = Cgs + Cgd, Cds SHORTED
VDS= 24V
1000 Ciss
Coss 8
6
Crss
100
4
0
10
0 4 8 12 16 20 24 28
1 10 100
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
1000 1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100 100sec
100
TJ = 175C
1msec
10msec
10 10
TJ = 25C
1 1
TC= 25C
TJ = 175C
VGS = 0V Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)
80 2.5
ID = 1.0mA
40 1.5
20 1.0
0 0.5
25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175
Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature
Case Temperature
10
Thermal Response ( ZthJC )
1 D = 0.50
0.20
0.10
R1
R1
R2
R2
R3
R3
R4 Ri (C/W) (sec)
R4
0.1 0.05 J 0.003454 13.68748
C
0.02 J
1 2 3 4 0.17246 7.21E-05
1 2 3 4
0.01 0.786312 0.001227
Ci= i/Ri 1.368218 0.007178
0.01 Ci i/Ri
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IRLB8721PbF
32 400
RDS(on), Drain-to -Source On Resistance (m)
20
200
16
TJ = 125C
12 100
8
TJ = 25C
4 0
Fig 12. On-Resistance vs. Gate Voltage Fig 13a. Maximum Avalanche Energy
vs. Drain Current
V(BR)DSS
15V
tp
L DRIVER
VDS
RG D.U.T +
V
- DD
IAS A
20V
VGS
tp 0.01
I AS
Fig 13b. Unclamped Inductive Test Circuit Fig 13c. Unclamped Inductive Waveforms
RD
VDS VDS
90%
VGS
D.U.T.
RG
+
-V DD
10%
V GS
VGS
Pulse Width 1 s
Duty Factor 0.1 % td(on) tr t d(off) tf
Fig 14a. Switching Time Test Circuit Fig 14b. Switching Time Waveforms
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IRLB8721PbF
VGS=10V *
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
- Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
-
+ Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Ripple 5% ISD
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs
Current Regulator
Same Type as D.U.T.
Id
Vds
50K
Vgs
12V .2F
.3F
+
V
D.U.T. - DS
Vgs(th)
VGS
3mA
Fig 16a. Gate Charge Test Circuit Fig 16b. Gate Charge Waveform
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IRLB8721PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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IRLB8721PbF
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by When mounted on 1" square PCB (FR-4 or G-10 Material).
max. junction temperature. For recommended footprint and soldering techniques refer to
Starting TJ = 25C, L = 0.32mH, RG = 25, application note #AN-994.
IAS = 25A. R is measured at TJ approximately 90C.
Pulse width 400s; duty cycle 2%.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.04/2009
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