Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
nMOS transistor:
G Closed (conducting) when
(gate) Gate = 1 (VDD)
Open (non-conducting) when
D S Gate = 0 (ground, 0V)
(drain) (source)
pMOS transistor:
Closed (conducting) when
G Gate = 0 (ground, 0V)
For nMOS switch, source is typically tied to ground and is used to pull-down signals:
Out
when Gate = 1, Out = 0, (OV)
G
when Gate = 0, Out = Z (high impedance)
S
For pMOS switch, source is typically tied to VDD, used to pull signals up:
S
when Gate = 0, Out = 1 (VDD)
G
when Gate = 1, Out = Z (high impedance)
Out
Note: The MOS transistor is a symmetric device. This means that the drain and source terminals
are interchangeable. For a conducting nMOS transistor, VDS > 0V; for the pMOS transistor, VDS
< 0V (or VSD > 0V).
The CMOS Inverter
Truth Table
I Out
VDD
0 1
1 0
I Out I Out
Rin
GND
Note: Ideally there is no static power dissipation. When "I" is fully is high or fully low, no
current path between VDD and GND exists (the output is usually tied to the gate of another MOS
Power is dissipated as "I" transistions from 01 and 10 and a momentory current path exists
between Vdd and GND. Power is also dissipated in the charging and discharging of gate
capacitances.
Parallel Connection of Switches
Y
Y = 0, if A or B = 1
A B
A+B
Y = 1 if A or B = 0
A B
A+B
A Y = 0, if A and B = 1
B A B
A
Y = 1, if A and B = 0
B A B
Y
NAND Gate Design
p-type transistor tree will provide "1" values of logic function
n-type transistor tree will provide "0" values of logic function
01 1 1 1 0
10 1
11 0
K-map (NAND):
NAND circuit example:
Vdd
Ptree = A + B
Ntree = A B
A
B Y
B
A
NOR Gate Design
p-type transistor tree will provide "1" values of logic function
n-type transistor tree will provide "0" values of logic function
Truth Table:
A
B 0 1
AB
0 1 0
00 1
01 0 1 0 0
10 0
11 0
K-map:
NOR circuit example:
Vdd
A
Ptree = A B
Ntree = A + B
B
Y
A
Y
B
What logic gate is this?
Vdd
A
Y = 1 when A B
Y = 0 when A + B
B
G 5V
S D D ?
0V 5V 0V ?
When VS > 4.3V, then VGS < VT, so switch stops conducting.
VD left at 5V VT = 5V 0.7V = 4.3V or VDD VT.
5V 5V 5V 5V
0V
G VTp = 0.7V
VGS = 0V 5V = 5V
5V
S D
5V 0V 5V ?
So when |VGS| < |0.7V|, VD will go from 5V
S D D ?
0.7V,
a weak "0"
When I = 1,
A B B = strong 1, if A = 1;
B = strong 0, if A = 0
I When I = 0, non-conducting
About that AND Gate...
Vdd
A No!!!
Poorly designed AND
(circuit designer fired)
A
Y
B
Vdd
A
More Complex Gates
0's of function F is F, F = AB + CD = AB + CD
nMOS transistors need high true inputs, so it is desirable for all input variables to be high true,
just as above.
A C
AB + CD
B D
A B
F = AB CD = ( A + B) (C + D)
Implementation
C D
Y
Can also use K-maps:
AB
1 1 0 1
F = AB + CD
1 1 0 1
CD
0 0 0 0
1 1 0 1
AB
0
CD Ntree = AB + CD
0 0 0 0
AB
1 1 1
1 1 1
Ptree = AC + AD + BC + BD
CD
= A (C + D) + B (C + D)
= (A + B) (C + D)
1 1 1
Introduction to Static Load Inverters
1)
resistor load
R
When I = 1, inverter dissipates static power.
O
VOH = 5V,
VOL close to 0V, depends on ratio R/RON
S
O
Using a transistor as a load tends to require much less silicon area than a resistor.
nMOS device with VTn < 0V (negative threshold voltage). Device is always conducting if VGS >
0V.
3)
D
VGS = 0V always
S
O
Load device is always on, looks like a load
I resistor.
Depletion-mode devices were used before it was economical to put both p-type and n-type
devices on the same die.
D
O
Dissipates static power when I = 1.
I
Source
The nMOS device is a four terminal device: Gate, Drain, Source, Bulk.
Bulk (substrate) terminal is normally ignored at schematic level, usually tied to ground for the
nMOS case. In analog applications, however, the bulk terminal may not be ignored.
Gate controls channel formation for conduction between Drain and Source. Drain at higher
potential than Source Source usually tied to GND to act as pull-down (nMOS).
Cutoff region
Linear region
V
2
(
Note: ID is linear with respect to (VGS VTn) only when VDS
2
)
2 is small.
Saturation region
ID = (VGS VTn )2 0 < VGS VTn < VDS
2
Device parameters:
K' = Cox = t = KP
ox
So,
K' W
ID = (VGS VTn )2 ; saturation region
2 L
VI characteristic
ID
VDS
VGS
boundary between
linear & saturation
regions (dashed line) |VGS - V T| = |V DS |
V GS5
LINEAR
GS
V
V GS4
ID
SATURATION
V GS3
V GS2
V GS1
CUTOFF
V DS
Things to note:
In the "linear" region, ID becomes less and less linear with VGS as VDS becomes large.
(
This is because the VDS
2
)
2 term in the linear region grows large.
Higher VGS values increase channel conductance allowing for higher values of ID for a
given VDS.
*MOSFET Characteristics
Vds 1 0 DC 10
Vgs 2 0 DC -.723
Vdummy 3 0 DC 0
M1 1 2 3 3 Mfet
.MODEL Mfet NMOS(KP=3686U VTO=2.30 LAMBDA=0.137)
.DC Vds 0 10 .2 Vgs 2.5 5 .5
.probe
.end
What do W and L physically look like?
nMOSFET layout:
Gate (polysilicon)
Source Drain
n+ diffusion n+ diffusion
In digital logic, typically will draw all transistors with the minimum gate length and vary the
width.
Larger W larger transconductance (more current flow for given gate voltage), higher gate
capacitance
During fabrication process, the actual width and length of the channel can be reduced by
diffusion from the bulk, source, and drain into the device channel.
SPICE has some MOSFET model parameters to account for this effect, LD and WD, where the
actual the actual length and width is calculated as
Leffective = Ldrawn - 2 LD
Weffective = Wdrawn - 2 WD
If LD, WD parameters not specified in the model, then SPICE assumes they are 0.
Ideal Inverter
Vout
VDD
switching
point
Vin
VDD
2
VIL represents the maximum logic 0 (LOW) input voltage that will guarantee a logic 1
(HIGH) at the output
VIH represents the minimum logic 1 (HIGH) input voltage that will guarantee a logic 0
(LOW) at the output
Noise Margin
Vin Vout
VDD VDD
Output logic 1
VOH
Input logic 1
NMH
VIH
VIL
A B D E
5 1.5 10 -4
Vout
4 1.2 10 -4
3 9 10 -5
V out (V)
I DD (A)
C
2 6 10 -5
IDD
1 3 10 -5
0 0 10 0
0 1 2 3 4 5
V in (V)
Region A:
0 Vin < VTn pMOS nonsaturated; nMOS cutoff
Note that the pMOS device can be in linear region even if IDp 0A!
Region B:
Because (VDSn = Vout) > Vth and (VGSn = Vin) < Vth ,
Vout in the above expression (Eqn. [B-2]) is decreasing towards Vth and Vin is increasing
towards Vth. When Eqn. [B-2] no longer holds, then the pMOS device will become
saturated.
n
The nMOS is saturated, so IDn = (Vin VTn ) 2 = n (VGSn VTn ) 2
2 2
VDD
S
IDp
IDn
S
GND
So Vout in region C,
The CMOS inverter has very high gain in region C so small changes in Vin produce large
changes in Vout. No closed form equation for Vout. Somewhere in this region, Vout = Vin,
which is the switching point for this gate.
VDD
IDp
Vout
IDn
What is Vin in region C?
p
IDp = (VDD Vin | VTp |) 2
2
n
IDn = (Vin VTn ) 2
2
So, using IDn = IDp, Vin can be solved for (more on this later....)
Region D:
p
Hence, IDp = (VDD Vin | VTp |) 2
2
IDn =
n
2
(
2(Vin VTn )Vout Vout
2
)
Again, since IDp = IDn, we can solve for Vout:
p
Vout2 2(Vin VTn)Vout + (VDD Vin | VTp |) 2 = 0
n
b b 2 4ac
using x=
2a
p
a = 1, b = 2(Vin VTn), c = (VDD Vin | VTp |) 2
n
we get
p
Vout = (Vin VTn) (Vin VTn ) 2 (Vin VDD | VTp |) 2 .
n
IDp
Region E:
Vout 0V
4 1.2 10 -4
3 9 10 -5
V out (V)
I DD (A)
C
2 6 10 -5
IDD
1 3 10 -5
0 0 10 0
0 1 2 3 4 5
V in (V)
Analysis:
VOH: Vin < VTn, the nMOS transistor is in cutoff while the pMOS transistor is turned-on
(inversion layer established). The result is
VOH VDD.
VOL: (VDD Vin) < |VTp|, the pMOS is in cutoff while the nMOS is on and providing a
conduction channel to ground. Hence,
VOL 0V.
VIL: Input low voltage, here the nMOS transistor is saturated and the pMOS is nonsaturated.
Equating the currents provides
n
(VIL VTn ) 2 = p (2(VDD VIL | VTp |)(VDD Vout ) (VDD Vout ) 2 ) .
2 2
VIL: (continued) Since two unknowns exist, Vin = VIL and Vout, a second equation is needed.
Use the unity-gain condition to obtain this second equation,
provides
n n
VIL 1 + = 2Vout + VTn VDD |VTp|.
p
p
Now the two equations needed to solve for VIL and Vout exist.
VIH: Input high voltage, here the nMOS is nonsaturated and the pMOS is saturated.
Equating the drain currents yields
n
2
( 2
2(VIH VTn )Vout Vout =
p
2
)
(VDD VIH | VTp |) 2 ,
the first of two equations needed to solve two unknowns, Vin = VIH and Vout. Use the
unity-gain condition to get the second,
This provides
p
VIH 1 + = 2Vout + VTn + p (VDD | VTp |) ,
n n
n
(Vth VTn ) 2 = p (VDD Vth | VTp |) 2
2 2
is obtained which can be easily solved to provide Vth,
p
VTn + (VDD | VTp |)
n
Vth =
p
1 +
n
VDD n
Note: switching point of gate (Vth) is -if- = 1 and VTn = VTp.
2 p
So, switching point of inverter is function of the ratio of the nMOS/pMOS gains and the
threshold voltages of the nMOS, pMOS transistors.
n/p Ratio
The n (gain of nMOS) / p (gain of pMOS) ratio determines the switching point of the CMOS
inverter.
3
n = 10 n = 1 n = 0.1
p p p
2
0 Vin (V)
0 1 2 3 4 5
VDD
Strong 2
pull-down
If we assume that the nMOS and pMOS transistors have equal W/L ratios, then
n Wn
n tox Ln n electron mobility
= = p = hole mobility .
p p Wp
tox Lp
in order for n = p .
Wp Wn
Vout if = because n > 1
Lp Ln p
5
0 Vin
0 1 2 3 4 5
VDD
2
Calculate the switching point of a static load inverter as function of n/p:
VDD
Vout
Vin
and I Dp =
p
2
(2(V
SGp | VTp |)VSDp VSDp
2
)
I Dp =
p
2
(2(VDD | VTp |)(VDD Vout ) (VDD Vout ) 2 )
Vout = | VTp | + (VDD | VTp |) 2 n (Vin VTn ) 2
p
2 2
n (VDD | VTp |) (Vout | VTp |)
=
p (Vin VTn ) 2
VDD
Let |VTp| = VTn = 0.2VDD and Vin = Vout = . Then, for VDD = 5V,
2
n
6.1 !!!
p
Note that this is very different result from the CMOS inverter case!
If VDD = 3.3V, but the value of VTn = |VTp| is unchanged (i.e., 1V in the above example),
then
n
11.5
p
VDD
for a switching point equal to .
2
The n/p ratio depends on the absolute value of VDD! This means that the operation of
the pseudo-nMOS inverter will NOT scale with VDD (for a given CMOS technology).
For the CMOS inverter, the n/p ratio for a switching point of VDD/2 is independent of
VDD so its operation will scale with supply voltage. This is a another big advantage of
CMOS technology.
Not unusual for static CMOS circuits to operate over a very large range of power supply
voltages, i.e., 2.0V to 6.0V is common.