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T1610, T1635
Features A2
insulated BTA
A1 A2
High commutation (4Q) or very high
G
commutation (3Q) capability
D2PAK
BTA series UL1557 certified (File ref: 81734) T1610G
RoHS ( 2002/95/EC) compliant T1635G
Insulated tab (BTA series, rated at 2500 VRMS)
A2
Applications
Snubberless versions (BTA/BTB...W and
A1 A1
T1635) especially recommended for use on A2
G A2
G
inductive loads, because of their high TO-220AB
commutation performances TO-220AB
insulated
BTB16
On/off or phase angle function in applications BTA16
such as static relays, light dimmers and
appliance motor speed controllers
Description
Available either in through-hole or surface-mount
packages, the BTA16, BTB16, T1610 and T1635
Triacs series are suitable for general purpose
mains power AC switching.
1 Characteristics
D2PAK /
Tc = 100 C
On-state rms current TO-220AB
IT(RMS) 16 A
(full sine wave) TO-220AB
Tc = 86 C
insulated
Non repetitive surge peak on-state F = 50 Hz t = 20 ms 160
ITSM current A
(full cycle, Tj initial = 25 C) F = 60 Hz t = 16.7 ms 168
I - II - III 25 50
IGT (1) Max. mA
VD = 12 V RL = 33 IV 50 100
VGT ALL Max. 1.3 V
VGD VD = VDRM RL = 3.3 k Tj = 125 C ALL Min. 0.2 V
IH (2) IT = 500 mA Max. 25 50 mA
I - III - IV 40 60
IL IG = 1.2 IGT Max. mA
II 80 120
dV/dt (2) VD = 67 %VDRM gate open Tj = 125 C Min. 200 400 V/s
(dV/dt)c
(2) (dI/dt)c = 7 A/ms Tj = 125 C Min. 5 10 V/s
IDRM Tj = 25 C 5 A
VDRM = VRRM Max.
IRRM Tj = 125 C 2 mA
Figure 1. Maximum power dissipation versus Figure 2. On-state rms current versus case
on-state rms current (full cycle) temperature (full cycle)
P(W) IT(RMS)(A)
20 18
18 16 BTB / T16
16
14
BTA
14
12
12
10
10
8
8
6
6
4 4
2 2
IT(RMS)(A) TC(C)
0 0
0 2 4 6 8 10 12 14 16 0 25 50 75 100 125
3.0
Zth(j-a)
2.5
2.0 1E-1
1.5
1.0
0.5
TC(C) tp(s)
0.0 1E-2
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0 25 50 75 100 125
ITM(A) ITSM(A)
200 180
Tj max.
100 Vto = 0.85V 160
Rd = 25 m
140 t=20ms
40
20
VTM(V) Number of cycles
1 0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1 10 100 1000
Figure 7. Non-repetitive surge peak on-state Figure 8. Relative variation of gate trigger
current for a sinusoidal current
2 2
ITSM(A), I t (A s) IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25C]
3000 2.5
Tj initial=25C holding current and latching current versus junction
dI/dt limitation: temperature (typical values)
50A/s
2.0
IGT
1000
ITSM 1.5
IH & IL
1.0
I2t
0.5
Figure 9. Relative variation of critical rate of Figure 10. Relative variation of critical rate of
decrease of main current versus decrease of main current versus
(dV/dt)c (typical values) (dV/dt)c (typical values)
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c (dI/dt)c [Tj] / (dI/dt)c [Tj specified]
2.0 6
Snubberless and Logic level types Standard types
1.8 SW
5
1.6 C
B 4
1.4
1.2 T1635/CW/BW 3
1.0
2
0.8
1
0.6
(dV/dt)c (V/s) Tj(C)
0.4 0
0.1 1.0 10.0 100.0 0 25 50 75 100 125
Figure 11. D2PAK thermal resistance junction to ambient versus copper surface under tab
(printed circuit board FR4, copper thickness: 35 m)
Rth(j-a)(C/W)
80
70
60
50
D2PAK
40
30
20
10
S(cm)
0
0 4 8 12 16 20 24 28 32 36 40
2 Ordering information
TRIAC series
Insulation
A = insulated
B = non insulated
Current
16 = 16 A
Voltage
600 = 600 V
800 = 800 V
Sensitivity and type
B = 50 mA Standard BW = 50 mA Snubberless
C = 25 mA Standard CW = 35 mA Snubberless
SW = 10 mA Logic Level
Packing mode
RG = Tube
TRIAC series
Current
16 = 16 A
Sensitivity
10 = 10 mA
35 = 35 mA
Voltage
600 = 600 V
800 = 800 V
Package
2
G = D PAK
Packing mode
Blank = Tube
-TR = Tape and reel
3 Package information
V2
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
R 0.40 0.016
V2 0 8 0 8
16.90
10.30 5.08
1.30
3.70
8.90
B C a1 3.75 0.147
I b2 a2 13.00 14.00 0.511 0.551
4 Ordering information
5 Revision history
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