BC817UPN

NPN Silicon AF Transistor Array

For AF stages and driver applications

4
High current gain 5 3
6 2
Low collector-emitter saturation voltage 1

Two (galvanic) internal isolated

NPN/PNP transistors in one package
Pb-free (RoHS compliant) package
Qualified according AEC Q101

C1 B2 E2

Tape loading orientation 6 5 4

TR2
Marking on SC74 package TR1
Top View
(for example W1s)
6 5 4 corresponds to pin 1 of device
1 2 3
W1s
E1 B1 C2

1 2 3 Position in tape: pin 1 EHA07177

opposite of feed hole side

Direction of Unreeling SC74_Tape

Type Marking Pin Configuration Package

BC817UPN 1Bs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74

Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 45 V
Collector-base voltage VCBO 50
Emitter-base voltage VEBO 5
Collector current IC 500 mA
Peak collector current, tp 10 ms ICM 1000
Base current IB 100
Peak base current IBM 200
Total power dissipation- Ptot 330 mW
TS 115 C
Junction temperature Tj 150 C
Storage temperature Tstg -65 ... 150

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 BC817UPN

Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 105 K/W

Electrical Characteristics at TA = 25C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage V(BR)CEO 45 - - V
IC = 10 mA, IB = 0
Collector-base breakdown voltage V(BR)CBO 50 - -
IC = 10 A, IE = 0
Emitter-base breakdown voltage V(BR)EBO 5 - -
IE = 10 A, IC = 0
Collector-base cutoff current ICBO A
VCB = 25 V, IE = 0 - - 0.1
VCB = 25 V, IE = 0 , TA = 150 C - - 50
Emitter-base cutoff current IEBO - - 100 nA
VEB = 4 V, IC = 0
DC current gain2) hFE -
IC = 100 mA, VCE = 1 V 160 250 400
IC = 300 mA, VCE = 1 V 100 - -
Collector-emitter saturation voltage2) VCEsat - - 0.7 V
IC = 500 mA, IB = 50 mA
Base emitter saturation voltage2) VBEsat - - 1.2
IC = 500 mA, IB = 50 mA

AC Characteristics
Transition frequency fT - 170 - MHz
IC = 50 mA, VCE = 5 V, f = 100 MHz
Collector-base capacitance Ccb - 6 - pF
f = 1 MHz, VBE = 10 V
Emitter-base capacitance Ceb - 60 -
VEB = 0.5 V, f = 1 MHz
1For calculation of R
thJA please refer to Application Note AN077 (Thermal Resistance Calculation)
2Pulse test: t < 300s; D < 2%

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 BC817UPN

DC current gain hFE = (IC) Collector-emitter saturation voltage

VCE = 1 V IC = (VCEsat ), hFE = 10

10 3 BC 817/818 EHP00223
10 3
mA
C
150 C
25 C
10 2 -50 C

5
hFE

10 2 10 1
5
105 C
85 C
65 C
25 C 10 0
-40 C
5

10 1 -5 -4 -3 -2 -1 0 10 -1
10 10 10 10 10 A 10 0 0.2 0.4 0.6 V 0.8
IC VCEsat

Base-emitter saturation voltage Collector cutoff current ICBO = (TA)

IC = (VBEsat), hFE = 10 VCBO = 25 V

BC 817/818 EHP00222 BC 817/818 EHP00221

10 3 10 5
mA nA
C 150 C CBO
25 C
-50 C 10 4
2
10
5
max
10 3

10 1
5 typ
10 2

10 0
5 10 1

10 -1 10 0
0 1.0 2.0 3.0 V 4.0 0 50 100 C 150
V BEsat TA

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 BC817UPN

Transition frequency fT = (IC) Collector-base capacitance Ccb = (VCB)

VCE = parameter in V, f = 2 GHz Emitter-base capacitance Ceb = (VEB)

BC 817/818 EHP00218 65
10 3
pF
MHz
fT
5 55

50

CCB/CEB
45

40

35
10 2
30

25
5
20 CEB

15

10
CCB
5
1
10 0
10 0 10 1 10 2 mA 10 3 0 2 4 6 8 10 12 14 16 V 20
C VCB/V EB

Total power dissipation P tot = (TS) Permissible Pulse Load RthJS = (tp)

400 10 3

K/W
mW

300 10 2
RthJS
Ptot

250

200 10 1

D=0.5
0.2
150
0.1
0.05
100 10 0 0.02
0.01
0.005
50 0

0 10 -1 -6 -5 -4 -3 -2 0
0 20 40 60 80 100 120 C 150 10 10 10 10 10 s 10
TS tp

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 BC817UPN

Permissible Pulse Load

Ptotmax/PtotDC = (tp )

10 3
Ptotmax/PtotDC

D=0
0.005
0.01
10 2 0.02
0.05
0.1
0.2
0.5

10 1

10 0 -6 -5 -4 -3 -2 0
10 10 10 10 10 s 10
tp

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 Package SC74 BC817UPN

Package Outline
2.9 0.2
B 1.1 MAX.
(2.25)
(0.35) 0.15 +0.1
-0.06

6 5 4

2.5 0.1
0.25 0.1

1.6 0.1
10 MAX.

10 MAX.
1 2 3
0.35 +0.1
-0.05 A
Pin 1 0.2 M B 6x 0.1 MAX.
marking 0.95
1.9 0.2 M A

Foot Print

0.5
2.9
1.9

0.95

Marking Layout (Example)

Small variations in positioning of
Date code, Type code and Manufacture are possible.

Manufacturer

2005, June
Date code (Year/Month)

Pin 1 marking BCW66H

Laser marking Type code

Standard Packing
Reel 180 mm = 3.000 Pieces/Reel
Reel 330 mm = 10.000 Pieces/Reel
For symmetric types no defined Pin 1 orientation in reel.
4 0.2
8
2.7

Pin 1 3.15 1.15

marking

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 BC817UPN

Edition 2009-11-16

Published by
Infineon Technologies AG
81726 Munich, Germany

2009 Infineon Technologies AG

All Rights Reserved.

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee

of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.

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