DM Practical-1 16MECV01 Ketan Baladaniya

PRACTICAL: 2
AIM: Design BJT device and simulation in Visual TCAD.

Layout of NPN BJT transistor

Mash file
DM Practical-1 16MECV01 Ketan Baladaniya

Input characteristic data

DM Practical-1 16MECV01 Ketan Baladaniya

Ib VS Vbe (Vce=.8v const.)

OUTPUT characteristic data

DM Practical-1 16MECV01 Ketan Baladaniya

Ic VS Vce (Vbe=1v const.)

DM Practical-1 16MECV01 Ketan Baladaniya

OUTPUT characteristic data

DM Practical-1 16MECV01 Ketan Baladaniya

Ic VS Vce (Vbe=2v const.)