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Actually a 2 port network requires 4 terminals, 2 for input port and 2 for
output port; but transistor has only 3 terminals. So by taking a terminal common to
input and output ports we can consider a transistor as a 2 port network.
v1=z11i1+z12i2
v2=z21i1+z22i2
v
1
z11= i i =0 open circuit input impedance (
2
1
v
1
z12= i i =0 open circuit reverse transfer impedance (
1
2
v2
z21= i i =0 open circuit forward transfer impedance( )
2
1
v2
z22= i i =0 open circuit output impedance()
1
2
i1=y11v1+y12v2
i2=y21v1+y22v2
i1
y11= v v =0 short circuit input admittance ( )
2
1
i1
y12= v v =0 short circuit transfer reverse admittance ( )
1
2
i2
y21= v v =0 short circuit transfer forward admittance ()
2
1
i2
y22= v v =0 short circuit output admittance ( )
1
2
v1=h11i1+h12v2
i2=h21i1+h22v2
v
1
h11= i v =0 short circuit input impedance ( = hi
2
1
v1
h12= v i =0 open circuit reverse voltage gain=hr (no units)
1
2
i2
h21= i V =0 short circuit forward current gain=hf (no units)
2
1
i2
h22= V i =0 open circuit output admittance=h0 ( )
1
2
Like wise
Step: -1
Step:-2 ho v 2
+ hi
hr v 2 hf i 1 ho
hi i1
hrv2 and hfi1 cannot be directly related to input port and output ports respectively.
So, indicated as dependent sources in Fig 2(b).
BJT (Bipolar junction transistor) is a non-linear device. h-parameter
model is nothing but linear ( linear equations), so by considering a transistors
characteristics piece wise linearly, we can find voltage gain, current gain, power
gain, input impedance, output impedance, ..etc.
(a) Current gain( A I : It is defined as the ratio of load current (iL) to input
current (i1). So
iL i 2
AI = i = i (from Fig3, iL=-i2)
1 1
i 2 hf
Ai = i1
= 1+ h z
o L
(b) Input impedance (zi): It is defined as the ratio of input voltage (v1)to
input current(i1).
v1
zi =
i1
From equation (1)
v1=hii1+hrv2
=hii1+hr (-i2zL) ( v2= iL z L =-i2zL)
= hii1+hr.i1.AI.zL ( AI =
i 2
i1 )
=i1 (hi + hr A I z L )
V1
zi = = hi + hr A I z L
i1
(c) Voltage gain (AV): It is defined as the ratio of output voltage (v0) to input
voltage(vi).
vo v2 i 2 . z L
AV= v = v = i 1 . zi
i 1
zL
AV = AI.
zi
(d) Output admittance (yo): It is defined as the ratio of output current (i2) to
output voltage (v2)with input supply voltage v s = 0.
i2
yo =
v 2 v =0
S
i2=hfi1+hov2
i2 hf i 1
=> v = v2
+ ho ---------------> (3)
2
i1
Now let us find v when vS=0
2
h f hr
y o = ho -
R S +hi
(e) Output impedance (zo):
v2
z0 =
i 2 v =0
S
1
z0 =
yo
v
(f) Overall voltage gain (AvS): - It is defined as the ratio of output voltage )
v
to supply voltage ).
o 2 v v
A vs = v = v
s s
v2 v1
= v . v
1 s
v1
=AV. v -------------------> (5)
s
Rs + R1 RS +
v ~s = v 1 Ri
~
v1
- -
Ri
i R
v1= v s . R + R
i S
v1 Ri
=> v = R + R ----------------------> (6)
s i S
i R
A v s =AV. R + R
i S
(g) Overall current gain (AIS): - It is defined as the ratio of output current(iL) to
supply current (is).
Consider input circuit of Fig3 and applying source transformation
i1
iS RS Ri
iL i 2
AIS = i = iS
S
i 2 i1
= . ---------------------> (7)
i1 iS
AP=AI.AV
v cc
R1 Rc
CC
vo
A CC
RL
RS
R2
RE CE
vS ~
B
Description:
For a.c analysis, capacitors are treated as short circuit as they offer
very small resistance i.e.emitter will be connected to ground, so acts common to
input and output.
v cc , R1, R2 and RE forms the self biasing to fix the operating point in
the active region.
CCs are coupling capacitors to block d.c signals from one stage to
next stage so as not to change the operating point of next stages.
CE is a bypass capacitor to provide low reactance path to a.c signals
and hence avoids negative feedback for a.c signals.
For proper operation of the circuit, polarities of the capacitors must be
connected correctly. The curve bar, which indicates negative terminal
must always be connected to a d,c voltage less than or equal to the d.c
level of positive terminal, straight bar.
Operation:
From figure4,
v o = v cc c - i c Rc
So v o decreases.
Description :
During the negative half-cycle of input a.c is added to d.c as they are in the
same polarity and net forward bias on emitter-base junction will be increased, so
base current will be increased and hence collector current will be increased.
R1
C1
C2
R2
v S~ RE RL
Description : Vcc, R1, R2, and RE form the biasing for transistor to operate in the
active region. C1 and C2 are coupling capacitors used to couple only a.c signals
from one stage to the next stage.
Operation: During the positive half-cycle of input, net forward bias on emitter-
bias junction will be increased, so base current and hence collector current will be
increased.
During the negative half cycle of input, net forward bias on emitter-base
junction will be decreased, so base current and hence collector current will be
decreased and output also will be decreased. So output is in phase with the input.
Fig9: Input and output waveforms of Common Base amplifier
Analysis problems:
1. Find Ai, Ri , Av, A v s , AIS and Ro for the following circuit. Given h je
=1.1k, hoe=25 A/v, hfe =50 and h =2.510-7
v CC =12 v
RC
1K 1K
0.1f v0
0.1f cc
50=
cc 1.2K
1K
0.1f RL
2K
v ~ 470 Ce
B ib C
Equivalent of BJT hie
h v cc +- hoe
hfe i b
E
This is a.c analysis, so v cc =0 =>ground.
So RC should be connected from collector to ground. All capacitors are
short circuited so RL should be connected from collector to ground. Emitter
is directly connected to ground. At the input R1 is connected from base to
ground ( v cc =0=ground) and R2 is connected from base to ground and
v ss in series with RS is also connected from base to ground.
i bB hie C
+ +
1K 1.2K +
RS +_ h v ce
R2 R1 v 1 hfe i b hoev 2 RC RL vo
_
vS ~ _ E _
'
Ri Ri
From the above figure,
Effective load R'L =RC||RL
=1K||1.2K
=545.45
IL h fe
Current gain (AI) = =
I1 1+ hoe R'L
50
=
1+25 106 545.45
= -49.32
Vi '
Input resistance ( Ri ) = Ii
= hie + A I h R L
= 1.1K + (-49.32)(2.510-4)545.45
= 1.093K
V0 R 'L
Voltage gain (AV) = V1
= A I. RS
Ri
545.45
= -49.32 1093 [ ] '
Ri
v s~
=-24.6
'
R = R1||R2||Ri = 1K||2K||1.093K
i
=0.414K
'
Vo Ri
Overall voltage gain A v S = = AV . '
VS R i+ R S
0.414 K
= -24.6 0.414 K +1 K
= -7.2
50 2.5 104
yo= 25 10-6 -
1100+0.4 K
iL iL iC ib
Overall current gain AIS= i = i
ib
iS
S C
RC R S R1 R 2
= R +R (-AI)
RS R1 R2 + Ri
C L
CC
RS 1K 10f
R2 o vo
100K 5K
v S~ 20K
The h- parameters equivalent circuit is
i1B hic ie E iL
+
RS
R2 R1
1K
100K
hrc v ec +_ hoc 5K 20K
10K hfc i b
v S~ vo
C _
Ri
'
Ri Ro R'0
iL h fc
Current gain AI= i =
1 1+ hoc R'L
= 4K
(101)
AI =
1+25 106 4 103
=91.8
Vi
Input resistance Ri = Ii
=1.2K+91.8 1 4K =368.4K
'
V0 R
Voltage gain (AV) = V1
=AI. L
Ri
4K
= 91.8 368.4 K
=0.996
o o 1 V V V
Overall voltage gain A v s = V = V . V
S 1 S
V1
=AV. V
S
RS
'
+ Ri
v1 A v s =AV. '
v s~ R'i R i+ R S
_
8.87 K
= 0.996 8.87 K +1 K
=0.895
R'i =R1||R2||Ri
=10K||100K||368.4K
=8.87K
h fc hrc
Output admittance (yo) = hoc - R S +hic
(101 ) (1)
=25 10-6 1 k+ 1.2 K
iL ie ib
Overall Current gain (AIS) = i .
ib
. i
e S
5 K RS R1 R2
= 5 K +20 K (-AI). R R R + R
S 1 2 i
3. For the common base circuit, the transistor parameters are hib=22, hfb=-
0.98, hob=0.49A/V, hrb =2.9 10-4. Calculate the values of Ri , Ro, AI,
AV, A v s , Ro and R'o .
CC CC
RS RE RC RL
5K 10K 12K
vS ~ vE
v CC
i1 E hie C iL
RS
5K hrb v cb+_ ho bRC RL
1K hfb i e 10K 12K
v S~
B
R
Effective load ) = RC||RL
=10K||12K
=5.45K
iL h fc
(1.) Current gain (AI) = i = '
1 1+ hob R L
(0.98 )
= 6 3
1+0.49 10 5.45 10
=0.977
R Vi
(2.) Input resistance )= = hib +AI.hrb. R'L
Ii
= 22+0.977 2.9 10-4 5.45 103
=23.544
'
V0 R
(3.) Voltage gain (AV) = V1
=AI. L
Ri
5.45 K
= 0.977 23.544
=226
o o 1 V V V
Overall voltage gain (A v s ) = A v s = V = V . V
S 1 S
RS V1
=AV. V
+ S
v1 '
vs Ri
~ R'i
_
A vs =AV. '
R i+ R S
Ri = R1||RE = 23.54||5K
'
= 23.42
23.42
A v s =226 23.42+1 K
=5.17
fb rb h h
Output admittance ( y o ) = hob - R +h
S ib
=0.768 ( )
1 1
Output resistance Ro= y = 0.768 = 1.3M
o
'
R0 =Ro||RC = 1.3M||10k= 9.923k
iL iL iC ie
Overall current gain (AIS) = i = i . i . i
S C e S
iL RC 10 K
= = 10 K +12 K = -0.45
iC R C+ R L
iC
ie
=-AI=-0.977
ie RS R E 1 K 5 K
= = 1 K5 K +23.54
iS R S R E + Ri
0.833 K
= 0.833 K +23.54
=0.9725
A IS = (-0.45) (-0.977) (0.9725)
= 0.4725
AV = 20 log 10 A V , AI = log 10 A I
and AP = log 10 A P
0 f
fL B.W fH
Fig 10: Frequency response
of an amplifier
AV is maximum voltage gain of the amplifier fL and fH are lower and upper
max
Bandwidth is defined as the range of frequencies over which gain is greater than
1
or equal to times the maximum gain.
2
Bandwidth= f H - f L
v CC
3.3K R1 RC
1.2K CC
vo
CC
10f
1K 10f RL
RS 100f 1K
R2
vs 6.8K Ce
~ 1K
1mv
S.NO f VO Vo
20 log( V )
S
10
1
2
.
.
.
.
0 f
From the plot, we can say that gain at low frequencies is increasing, gain at high
frequencies is decreasing and gain at mid frequencies is constant as frequency is
increasing. The reasons for gain fall at low and high frequencies is as follows.
Practically the value of bypass capacitors is very high so the effect of bypass
capacitor is low compared to coupling capacitor.
E B C C
B
E
RS
~ vS
Ri
C Stray
the signal will be passed through c stray compared to input of the amplifier and
hence gain decreases.
Corollary: For common base and common collector amplifiers coupling
capacitors cause diminished gain at low frequencies and , shunt capacitances &
stray capacitances cause diminished gain at high frequencies.
5.14. FET amplifiers: From the operation of FETs studied in second unit, we
know 2 d.c supplies v gs and Vds are required. So current is due to both v gs and
v ds . From the super position theorem,
Where gm is transconductance.
b) id due to voltage source v ds is
V ds
id =
2
rd
V ds
id = i d +i d = gm V gs + --------------> (9)
1 2
rd
Constructing the equation (9) as a 2 port network results in small signal
model of FET as shown below.
g d
+ v ds r +
v gs gm v gs d v ds
rd
- _
s
5.15. Analysis of common source FET amplifier using small signal model:
cc
)| R D cc
RG v0
vi
v gs
Fig 14: FET amplifier with fixed bias
I1 G id D
+
vi ~ RG gm v gs rd RD
v gs v0
_ S
zi Z0 Z0
'
Vi
(i) Input impedance ( z i ) = Ii
= RG
(ii)Output impedance ( z o ) = r d
g m V gs r d gm V gs r d
=>id = rd + R D
= vo = rd + R D
RD
Vo gm R D r d
AV= V = rd+ R D
gs
Self-bias:
v DD
RD
c2
c1 v0
vi
RG
RS cS
v0
+
vi RG v gs gm v gs rd RD
Zi z0 z '0
Input impedance ( z i ) = RG
Output impedance ( z o ) =rd
v DD
RD
v0
vi
c1
RG
RS
S
o
i dD
G +
v gs gm v gs rd RD
vi RG - v0
RS
Zi z0 '
z0
Fig 19: AC equivalent of FET amplifier with self bias and un bypassed Rs
Input impedance ( z i ) = RG
V o
Output impedance ( z o ) = i V =0 i
0
D d S S
gm vi r d R D
vo=-idRD= ( = gm r d
R D +r d + R S ( 1+ )
vo g m r d R D
AV = vi
=
R D +r d + R S ( 1+ )
v DD
vi
RG v0
c2
RS
vi G D
+
v gs gm v gs rd
_ S
RG
o v0
RS
R0
Ri
Fig 21: AC equivalent of FET Common drain amplifier
G S v0
+ id
RG gm v gs rd RS
vi
i dg m v S
_ D
id
Ri R0 '
R0
vo=idRS=-(id-gmVgs)rd
=-(id+gmvo)rd ( from (13))
vo(1+gmrd) = - idrd
vo r d
id
= 1+ g r
m d
r d
=
1+
V o r d
As 1 Ro= i V =0 =
d
i
r d 1
= 1+ g r = - g
m d m
' 1
Ro =Ro || RS =
g m ||RS
vo
Voltage gain (AV) = vi
-vi+Vgs+ idRS=0
idRS+(id-gm(vi- idRS))rd=0
id(RS+rd+gmrdRS)=gmvird
vi
=>id= R +r + R ----------------> (17)
S d S
vo RS
AV= vi
= R +r + R
S d S
As rdRS(1+)
RS
AV= R (1+ ) = 1+
S
Note 2: Positive sign of AV indicates 0 phase shift between input and output.
c1 S D c2
RS RD
vi v0
v DD
Equivalent circuit
i+
r
gm v dgs
S i id D
+ +
vi RS gm v gs
v0
RD
G _
-
Z 'i Zi
=
v iiR D
- gm(-vi)
( Vgs=-vi)
rd
R vi
i= 1+ r(D
d
) = r + gmvi = vi
d
( r1 +g )
d
m
RD
1+
vi rd rd + R D
=> zi= = =
i 1 1+ gm r d
+g
rd m
z 'i =zi||RS
Vo
Output impedance (zo) =
i o V =0 i
i.e impedance seen from output port when input port is short circuited.
zo=rd||RD
Vo
Voltage gain (AV) = Vi
vo= -iDRD
vi=-Vgs
-vi+(i+gmVgs)rd+iRD=0
As Vgs=-vi, we get
-vi+(i-gmvi)rd+iRD=0
=> i(rD+RD)=vi(1+gmrd)
v i (1+ gm r d )
=> i= rd + R D
v i R D (1+ g m r d )
=> vo= iRD= r d + RD
vo R D ( 1+ g m r d )
=> AV= v = rd + R D
i
This quantity allows circuit designers to determine the maximum gain that can be
extracted from the device for a given frequency and vice-versa.
IF GBWP of an amplifier is 10KHz, it means that the gain of the device falls
to unity at 10KHz.
GBWP is constant for a given amplifier. That is even we add some more
circuitry to increase (or decrease) gain then bandwidth will be decreased (or
increased) and GBWP is constant.