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8550

8550

PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages.

The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As complementary type the NPN transistor ST 8050 is recommended.

On special request, these transistors can be manufactured in different pin configurations.

Absolute Maximum Ratings (T a = 25)

configurations. Absolute Maximum Ratings (T a = 25 ℃ ) TO-92 Plastic Package Weight approx. 0.19g
configurations. Absolute Maximum Ratings (T a = 25 ℃ ) TO-92 Plastic Package Weight approx. 0.19g

TO-92 Plastic Package Weight approx. 0.19g

 

Symbol

Value

Unit

Collector Emitter Voltage

-V CEO

25

 

V

Collector Base Voltage

-V CBO

40

 

V

Emitter Base Voltage

-V EBO

6

 

V

Collector Current

-I

C

800

mA

Peak Collector Current

-I

CM

1

 

A

Base Current

-I

B

100

mA

Power Dissipation

P

tot

625

1)

mW

Junction Temperature

T

j

150

O

C

Storage Temperature Range

T

S

-55 to +150

O

C

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

 

8550

8550

Characteristics at T amb =25 O C

 

Symbol

Min.

Typ.

Max.

Unit

DC Current Gain at -V CE =1V, -I C =100mA

ST 8550B

 

h

FE

70

-

120

-

ST 8550C

h

FE

120

-

200

-

ST 8550D

h

FE

160

-

300

-

ST 8550E

h

FE

300

-

380

-

at -V CE =1V, -I C =350mA

h

FE

60

-

-

-

Collector Cutoff Current at -V CB =35V

 

I

CBO

-

-

100

nA

Collector Saturation Voltage at -I C =500mA, -I B =50mA

V

CE(sat)

-

-

0.5

V

Base Saturation Voltage at -I C =500mA, -I B =50mA

V

BE(sat)

-

-

1.2

V

Collector Emitter Breakdown Voltage at -I C =2mA

V

(BR)CEO

25

-

-

V

Collector Base Breakdown Voltage at -I C =10μA

V

(BR)CBO

40

-

-

V

Emitter Base Breakdown Voltage at -I E =100μA

V

(BR)EBO

6

-

-

V

Gain Bandwidth Product at -V CE =5V, -I C =10mA, f=50MHz

 

f

T

-

100

-

MHz

Collector Base Capacitance at -V CB =10V, f=1MHz

 

C

CBO

-

12

-

pF

Thermal Resistance Junction to Ambient

 

R

thA

-

-

200

1)

K/W

1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

 

8550

8550 Admissible power dissipation versus ambient temperature Collector current versus base emitter voltage Valid
Admissible power dissipation versus ambient temperature Collector current versus base emitter voltage Valid provided
Admissible power dissipation
versus ambient temperature
Collector current
versus base emitter voltage
Valid provided that leads are kept at
ambient temperature
at a distance of 2 mm from case
W
mA
ST 8550
ST 8550
3
1
10
o
25
C
5
o
-50 C
2
0.8
2
10
o
150 C
5
Ptot
0.6
-IC
typical
2
limits
o
at Tamb=25 C
10
5
0.4
2
1
0.2
5
2
-1
10
0
o
0
1
2 V
0
100
200 C
Tamb
-VBE

Pulse thermal resistance versus pulse duration

Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case

K/W ST 8550 3 10 5 2 2 10 0.5 5 rthA 0.2 2 0.1
K/W
ST 8550
3
10
5
2
2
10
0.5
5
rthA
0.2
2
0.1
10
0.05
5
0.02
2
1
tp
0.01
5
0.005
v= T tp
PI
v=0
2
T
-1
10
-6
-4
-1
-3
-2
1
10
10
10
10 -5
10
10
10
10
tp

2 S

Collector cutoff current versus ambient temperature

nA ST 8550 10 4 5 2 3 -ICES 10 5 2 2 10 5
nA
ST 8550
10 4
5
2
3
-ICES
10
5
2
2
10
5
2
10
5
2
1
0
100
current versus ambient temperature nA ST 8550 10 4 5 2 3 -ICES 10 5 2

Tamb

8550

8550 DC current gain versus collector current Common emitter collector characteristics mA ST 8550 ST 8550
DC current gain versus collector current Common emitter collector characteristics mA ST 8550 ST 8550
DC current gain
versus collector current
Common emitter
collector characteristics
mA
ST 8550
ST 8550
500
1000
0.9
-VCE=1V
0.85
700
500
400
400
o
150
C
300
300
200
-IC
hFE
o
0.8
-50
C
100
200
70
50
40
30
100
0.75
20
Tamb=25 o C
-VBE=0.7V
0
10
0
1
2V
10 -1
1
10
10 2
10 3
-VCE
-IC

Common emitter collector characteristics

mA ST 8550 500 3.2 2.8 2.4 400 2 1.8 1.6 300 -IC 1.4 1.2
mA
ST 8550
500
3.2
2.8
2.4
400
2
1.8
1.6
300
-IC
1.4
1.2
1
200
0.8
0.6
100
0.4
-IB=0.2mA
0
0
1
2V
-VCE

Common emitter collector characteristics

mA ST 8550 100 0.35 80 0.3 0.25 60 -IC 0.2 40 0.15 0.1 20
mA
ST 8550
100
0.35
80
0.3
0.25
60
-IC
0.2
40
0.15
0.1
20
-IB=0.05mA
0
0
10
20V
-VCE

8550

8550

Collector saturation voltage versus collector current

V ST 8550 0.5 typical limits o at Tamb=25 C 0.4 -Ic =10 -IB 0.3
V
ST 8550
0.5
typical
limits
o
at Tamb=25
C
0.4
-Ic
=10
-IB
0.3
-VCEsat
0.2
o
0.1
25
C
o
150
C
o
-50
C
0
-1
2
10
1
10
10
10
-IC

3 mA

Base saturation voltage versus collector current

V ST 8550 2 typical limits o at Tamb=25 C -Ic =10 -IB -VBEsat 1
V
ST 8550
2
typical
limits
o
at Tamb=25 C
-Ic
=10
-IB
-VBEsat
1
o
-50
C
o
150
C
o
25 C
0
10 -1
1 10
10 2
10
1 o -50 C o 150 C o 25 C 0 10 -1 1 10 10

-IC

3 mA

Gain bandwidth product versus collector current MHz ST 8550 10 3 o Tamb=25 C 7
Gain bandwidth product
versus collector current
MHz
ST 8550
10 3
o
Tamb=25 C
7
f=20MHz
5
4
3
2
-VCE=5V
fT
10 2
1V
7
5
4
3
2
10
2
1
10
10
2
5
2
5
2
5
10
3 mA
-IC