FGH60N60SFD 600V, 60A Field Stop IGBT

April 2009

FGH60N60SFD tm
600V, 60A Field Stop IGBT
Features General Description
High current capability Using Novel Field Stop IGBT Technology, Fairchilds new series
Low saturation voltage: VCE(sat) =2.3V @ IC = 60A of Field Stop IGBTs offer the optimum performance for Induction
High input impedance Heating, UPS, SMPS and PFC applications where low conduc-
tion and switching losses are essential.
Fast switching
RoHS compliant

Applications
Induction Heating, UPS, SMPS, PFC

E C
C
G

COLLECTOR
(FLANGE) E

Absolute Maximum Ratings

Symbol Description Ratings Units
VCES Collector to Emitter Voltage 600 V
VGES Gate to Emitter Voltage 20 V
Collector Current @ TC = 25oC 120 A
IC
Collector Current @ TC = 100oC 60 A
ICM (1) Pulsed Collector Current o
@ TC = 25 C 180 A
Maximum Power Dissipation @ TC = 25oC 378 W
PD
o
Maximum Power Dissipation @ TC = 100 C 151 W
o
TJ Operating Junction Temperature -55 to +150 C
o
Tstg Storage Temperature Range -55 to +150 C
Maximum Lead Temp. for soldering o
TL 300 C
Purposes, 1/8 from case for 5 seconds

Notes:
1: Repetitive test, Pulse width limited by max. juntion temperature

Thermal Characteristics
Symbol Parameter Typ. Max. Units
o
RJC(IGBT) Thermal Resistance, Junction to Case - 0.33 C/W
o
RJC(Diode) Thermal Resistance, Junction to Case - 1.1 C/W
oC/W
RJA Thermal Resistance, Junction to Ambient - 40

2009 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FGH60N60SFD Rev. A1
 FGH60N60SFD 600V, 60A Field Stop IGBT
Package Marking and Ordering Information
Max Qty
Packaging
Device Marking Device Package Type Qty per Tube per Box
FGH60N60SFD FGH60N60SFDTU TO-247 Tube 30ea -

Electrical Characteristics of the IGBT TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A 600 - - V
BVCES Temperature Coefficient of Breakdown
TJ Voltage
VGE = 0V, IC = 250A - 0.4 - V/oC

ICES Collector Cut-Off Current VCE = VCES, VGE = 0V - - 250 A

IGES G-E Leakage Current VGE = VGES, VCE = 0V - - 400 nA

On Characteristics
VGE(th) G-E Threshold Voltage IC = 250A, VCE = VGE 4.0 5.0 6.5 V
IC = 60A, VGE = 15V - 2.3 2.9 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 60A, VGE = 15V,
- 2.5 - V
TC = 125oC

Dynamic Characteristics
Cies Input Capacitance - 2820 - pF
Coes Output Capacitance VCE = 30V, VGE = 0V, - 350 - pF
f = 1MHz
Cres Reverse Transfer Capacitance - 140 - pF

Switching Characteristics
td(on) Turn-On Delay Time - 22 - ns
tr Rise Time - 42 - ns
td(off) Turn-Off Delay Time VCC = 400V, IC = 60A, - 134 - ns
tf Fall Time RG = 5, VGE = 15V, - 31 62 ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 1.79 - mJ
Eoff Turn-Off Switching Loss - 0.67 - mJ
Ets Total Switching Loss - 2.46 - mJ
td(on) Turn-On Delay Time - 22 - ns
tr Rise Time - 44 - ns
td(off) Turn-Off Delay Time VCC = 400V, IC = 60A, - 144 - ns
tf Fall Time RG = 5, VGE = 15V, - 43 - ns
Inductive Load, TC = 125oC
Eon Turn-On Switching Loss - 1.88 - mJ
Eoff Turn-Off Switching Loss - 1.0 - mJ
Ets Total Switching Loss - 2.88 - mJ
Qg Total Gate Charge - 198 - nC
Qge Gate to Emitter Charge VCE = 400V, IC = 60A, - 22 - nC
VGE = 15V
Qgc Gate to Collector Charge - 106 - nC

FGH60N60SFD Rev. A1 2 www.fairchildsemi.com

 FGH60N60SFD 600V, 60A Field Stop IGBT
Electrical Characteristics of the Diode TC = 25C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max Units

TC = 25oC - 2.0 2.6
VFM Diode Forward Voltage IF = 30A V
TC = 125oC - 1.8 -
TC = 25oC - 47 -
trr Diode Reverse Recovery Time ns
TC = 125oC - 179 -
IES = 30A, dIES/dt = 200A/s
TC = 25oC - 83 -
Qrr Diode Reverse Recovery Charge nC
o
TC = 125 C - 567 -

FGH60N60SFD Rev. A1 3 www.fairchildsemi.com

 FGH60N60SFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics

180 180
o o
TC = 25 C TC = 125 C
20V 20V
15V 15V
150 150
12V
Collector Current, IC [A]

Collector Current, IC [A]

12V 10V
120 10V 120

90 90

60 60 VGE = 8V
VGE = 8V
30 30

0 0
0 2 4 6 8 0 2 4 6 8
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics

Characteristics
180 180
Common Emitter Common Emitter
VGE = 15V VCE = 20V
150 o
150 o
TC = 25 C TC = 25 C
Collector Current, IC [A]
Collector Current, IC [A]

o o
TC = 125 C TC = 125 C
120 120

90 90

60 60

30 30

0 0
0 1 2 3 4 5 0 1 2 3 4 5
Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE
Temperature at Variant Current Level
4.0 20
Common Emitter Common Emitter
VGE = 15V
Collector-Emitter Voltage, VCE [V]

o
Collector-Emitter Voltage, VCE [V]

TC = -40 C
3.5
120A 16

3.0
12
2.5
60A
8
2.0

IC = 30A 120A
1.5 4
60A
IC = 30A
1.0 0
25 50 75 100 125 0 4 8 12 16 20
o
Collector-EmitterCase Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]

FGH60N60SFD Rev. A1 4 www.fairchildsemi.com

 FGH60N60SFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
o o
TC = 125 C
Collector-Emitter Voltage, VCE [V]

TC = 25 C

Collector-Emitter Voltage, VCE [V]

16 16

12 12

8 8

120A
60A 120A
4 4
60A
IC = 30A
IC = 30A
0 0
0 4 8 12 16 20 0 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

Figure 9. Capacitance Characteristics Figure 10. Gate charge Characteristics

6000 15
Common Emitter Common Emitter
VGE = 0V, f = 1MHz o
TC = 25 C
5000
Gate-Emitter Voltage, VGE [V]

o
TC = 25 C 12
Cies 300V
Capacitance [pF]

4000 VCC = 100V

9
200V
3000
Coes 6
2000

3
1000 Cres

0
1 10 30 0 50 100 150 200
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]

Figure 11. SOA Characteristics Figure 12. Turn off Switching SOA Characteristics
500 300

10s
100
100
100s
Collector Current, Ic [A]

Collector Current, IC [A]

10 1ms

10 ms
1 DC 10
Single Nonrepetitive
Pulse TC = 25oC
0.1
Curves must be derated
linearly with increase Safe Operating Area
in temperature o
VGE = 15V, TC = 125 C
0.01 1
1 10 100 1000 1 10 100 1000
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

FGH60N60SFD Rev. A1 5 www.fairchildsemi.com

 FGH60N60SFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics

Figure 13. Turn-on Characteristics vs. Figure 14. Turn-off Characteristics vs.
Gate Resistance Gate Resistance
300 6000
Common Emitter
VCC = 400V, VGE = 15V
IC = 60A
100 o
1000 TC = 25 C

Switching Time [ns]

Switching Time [ns]

o
tr TC = 125 C
td(off)

Common Emitter 100

tf
td(on) VCC = 400V, VGE = 15V
IC = 60A
o
TC = 25 C
o
TC = 125 C
10 10
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance, RG [] Gate Resistance, RG []

Figure 15. Turn-on Characteristics vs. Figure 16. Turn-off Characteristics vs.
Collector Current Collector Current
500 1000
Common Emitter Common Emitter
VGE = 15V, RG = 5 VGE = 15V, RG = 5
o o
TC = 25 C TC = 25 C
o o
TC = 125 C TC = 125 C
Switching Time [ns]

Switching Time [ns]

tr
td(off)
100
100

td(on)
tf

10 10
0 20 40 60 80 100 120 0 20 40 60 80 100 120
Collector Current, IC [A] Collector Current, IC [A]

Figure 17. Switching Loss vs Gate Resistance Figure 18. Switching Loss vs Collector Current
20
10 30
Common Emitter Common Emitter
VCC = 400V, VGE = 15V VGE = 15V, RG = 5
IC = 60A 10 o
TC = 25 C
o Eon
TC = 25 C TC = 125 C
o
Switching Loss [mJ]

Switching Loss [mJ]

o
TC = 125 C

Eon
Eoff
1

Eoff
1

0.5 0.1
0 10 20 30 40 50 0 20 40 60 80 100 120
Gate Resistance, RG [] Collector Current, IC [A]

FGH60N60SFD Rev. A1 6 www.fairchildsemi.com

 FGH60N60SFD 600V, 60A Field Stop IGBT
Typical Performance Characteristics

Figure 19. Forward Characteristics Figure 20. Reverse Current

200 500

100 100 o
TC = 125 C

Reverse Current , IR [A]

Forward Current, IF [A]

o
TJ = 125 C o 10
TJ = 25 C

o
TC = 75 C
10 1
o
TJ = 75 C

o
0.1
TC = 25 C o
TC = 25 C
o
TC = 125 C
1 0.01
0 1 2 3 4 0 200 400 600
Forward Voltage, VF [V] Reverse Voltage, VR [V]

Figure 21. Stored Charge Figure 22. Reverse Recovery Time

100 60
Stored Recovery Charge, Qrr [nC]

Reverse Recovery Time, trr [ns]

200A/s
80 200A/s 50

di/dt = 100A/s

60 di/dt = 100A/s 40

40 30
5 20 40 60 5 20 40 60
Forward Current, IF [A] Forward Current, IF [A]

Figure 23. Transient Thermal Impedance of IGBT

1
Thermal Response [Zthjc]

0.5
0.1
0.2
0.1
0.05
0.02 PDM
0.01
0.01
t1
single pulse t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
1E-3
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]

FGH60N60SFD Rev. A1 7 www.fairchildsemi.com

 FGH60N60SFD 600V, 60A Field Stop IGBT
Mechanical Dimensions

TO-247AB (FKS PKG CODE 001)

Dimensions in Millimeters

FGH60N60SFD Rev. A1 8 www.fairchildsemi.com

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Advance Information
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No Identification Needed
Obsolete
Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change in
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any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I40

2008 Fairchild Semiconductor Corporation www.fairchildsemi.com