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2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • R D S ( O N )
2N7002 60V N-Channel Enhancement Mode MOSFET FEATURES • R D S ( O N )

2N7002

60V N-Channel Enhancement Mode MOSFET

FEATURES

• R DS(ON) , V GS @10V,I DS @500mA=5

• R DS(ON) , V GS @4.5V,I DS @75mA=7.5

• Advanced Trench Process Technology

• High Density Cell Design For Ultra Low On-Resistance

• Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.

• Lead free in comply with EU RoHS 2011/65/EU directives

• Green molding compound as per IEC61249

(Halogen Free)

MECHANICALDATA

• Case : SOT-23 Package

• Terminals : Solderable per MIL-STD-750,Method 2026

• Approx. Weight : 0.0003 ounces, 0.008 grams

• Marking : S72

0.120(3.04) 0.110(2.80) 0.056(1.40) 0.047(1.20) 0.079(2.00) 0.008(0.20) 0.070(1.80) 0.003(0.08) 0.004(0.10)
0.120(3.04)
0.110(2.80)
0.056(1.40)
0.047(1.20)
0.079(2.00)
0.008(0.20)
0.070(1.80)
0.003(0.08)
0.004(0.10)
0.044(1.10)
0.000(0.00)
0.035(0.90)
0.020(0.50)
0.013(0.35)
0.006(0.15)MIN.

Maximum

Ratings and Thermal Characteristics (T A =25 O C unless otherwise noted )

 

PA RA ME TE R

ymbol

S Limit

Units

D

rain-S ource Voltage

V

D S

 

60

V

Gate-S ource Voltage

 

V

G S

 

+20

V

C

ontinuous D rain C urrent

I

D

 

250

mA

P

ulsed D rain C urrent 1 )

I D M

 

1300

mA

Maximum P ower D issipation

T

T

A =25 O C

P

 

350

mW

A =75 O C

 

D

210

Operating Junction and S torage Temperature Range

 

T J ,T S T G

-55

to

+ 150

O C

Junction-to Ambient Thermal Resistance(PCB mounted) 2

 

R

θ J A

 

357

O C /W

Note:1. Maximum DC current limited by the package 2. Surface mounted on FR4 board, t < 10 sec

2N7002 ELECTRICALCHARACTERISTICS Parameter Symbol   Test Condition Min. Typ. Max. Units
2N7002 ELECTRICALCHARACTERISTICS Parameter Symbol   Test Condition Min. Typ. Max. Units Static

2N7002

ELECTRICALCHARACTERISTICS

Parameter

Symbol

 

Test Condition

Min.

Typ.

Max.

Units

Static

Drain-Source Breakdown Voltage

BV DSS

 

V

GS =0V, I D =10uA

60

-

 

-V

Gate Threshold Voltage

V

GS(th)

V

DS =V GS , I D =250uA

 

1-

2.5

V

Drain-Source On-State Resistance

R

DS(on)

 

V

GS =4.5V, I D =75mA

 

--57.

 

Ω

Drain-Source On-State Resistance

R

DS(on)

 

V

GS =10V, I D =500mA

-

-5

 

Zero Gate Voltage Drain Current

I

DSS

 

V DS =60V, V GS =0V

-

-

 

1Au

Gate Body Leakage

I

GSS

V

GS =+20V, V DS =0V

-

 

-+100

nA

Forward Transconductance

 

g

fS

V

DS =15V, I D =250mA

200

-

 

-Sm

Dynamic

Total Gate Charge

 

Q

g

 

-

0.6

0.7

 

Gate-Source Charge

 

Q

 

V

DS =15V, I D =500mA

-

0.1

-

nC

 

gs

V

DD =4.5V

Gate-Drain Charge

 

Q

gd

 

-

0.08

-

Turn-On Time

 

t

on

   

V

DD =10V , R L =20Ω

-

951

   
   

I

D =500mA , V GEN =10V

     

ns

         

Turn-Off Time

 

t

off

   

R G =10Ω

-

21

26

 

Input Capacitance

 

C

iss

   

--05

   

Output Capacitance

C oss

 

V

DS =25V, V GS =0V f=1.0MH Z

 

- -52

 

pF

Reverse Transfer Capacitance

 

C

     

- -5

 
 

rss

Source-Drain Diode

Max. Diode Forward Current

 

I

 

-

 

--

250

mA

 

s

 

Diode Forward Voltage

 

V

SD

I S =250mA , V GS =0V

 

-30.9

1.2

V

Switching V DD Test Circuit RL V IN V OUT RG
Switching
V DD
Test Circuit
RL
V IN
V OUT
RG
Gate Charge V DD Test Circuit RL V GS 1mA RG
Gate Charge
V DD
Test Circuit
RL
V GS
1mA
RG
2N7002 O Typical Characteristics Curves (T =25 C,unless otherwise noted) A 1.2 V GS =
2N7002 O Typical Characteristics Curves (T =25 C,unless otherwise noted) A 1.2 V GS =

2N7002

O Typical Characteristics Curves (T =25 C,unless otherwise noted) A 1.2 V GS = 6.0~10V
O
Typical Characteristics Curves (T =25 C,unless otherwise noted)
A
1.2
V GS = 6.0~10V
5.0V
1
4.0V
0.8
0.6
0.4
3.0V
0.2
0
012345
V DS - Drain-to-Source Voltage (V)
Fig. 1-TYPICAL FORWARD CHARACTERISTIC
FIG.1- Output
Characteristic
I D - Drain-to-Source Current (A)
5 4 3 V GS = 4.5V 2 1 VGS=10V 0 0 0.2 0.4 0.6
5
4
3
V GS = 4.5V
2
1
VGS=10V
0
0
0.2
0.4
0.6
0.8
1
1.2
I D - Drain Current (A)
FIG.3-
On Resistance vs Drain Current
R DS (ON) - On-Resistance
( )
2 V =10V GS 1.8 I D =500mA 1.6 1.4 1.2 1 0.8 0.6 0.4
2
V
=10V
GS
1.8
I D =500mA
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
T J - Junction Temperature ( o C)
FIG.5-
On Resistance vs Junction Temperature
R DS(ON) - On-Resistance(Normalized)
1.2 =10V V DS 1 0.8 0.6 0.4 T =25 o C J 0.2 0
1.2
=10V
V DS
1
0.8
0.6
0.4
T
=25 o C
J
0.2
0
0123456
V GS - Gate-to-Source Voltage (V)
FIG.2- Transfer Characteristic
I D - Drain Source Current (A)
10 I D =500mA 8 6 o T =125 C 4 J 2 T =25
10
I D
=500mA
8
6
o
T =125
C
4
J
2
T
=25 o C
J
0
2
3
4
5
6
7
8
9
10
V GS - Gate-to-Source Voltage (V)
FIG.4-
On Resistance vs Gate to Source Voltage
R DS(ON) - On-Resistance
( )
2N7002 Vgs Qg Qsw Vgs(th) Qg(th) Qgs Qgd Qg Fig.6 - Gate Charge Waveform 1.2
2N7002 Vgs Qg Qsw Vgs(th) Qg(th) Qgs Qgd Qg Fig.6 - Gate Charge Waveform 1.2

2N7002

Vgs Qg Qsw Vgs(th) Qg(th) Qgs Qgd Qg Fig.6 - Gate Charge Waveform
Vgs
Qg
Qsw
Vgs(th)
Qg(th)
Qgs
Qgd
Qg
Fig.6 - Gate Charge Waveform
1.2 I D =250 A 1.1 1 0.9 0.8 0.7 0.6 -50 -25 0 25
1.2
I D =250
A
1.1
1
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
125
150
T J - Junction Temperature ( o C)
Fig.8 - Threshold Voltage vs Temperature
V th - G-S Threshold Voltage (NORMALIZED)
10 = 0V V GS 1 T =25 o C J T J =125 o
10
= 0V
V GS
1
T
=25 o C
J
T J =125 o C
T
=-55 o C
J
0.1
0.01
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
V SD - Source-to-Drain Voltage (V)
Fig.10 - Source-Drain Diode Forward Voltage
I S - Source Current (A)
10 V DS= 15V 8 I D =500mA 6 4 2 0 0 0.2 0.4
10
V DS= 15V
8
I D =500mA
6
4
2
0
0
0.2
0.4
0.6
0.8
1
Q g - Gate Charge (nC)
Fig.7 - Gate Charge
V GS - Gate-to-Source Voltage (V)
73 I = 250 A D 72 71 70 69 68 67 66 65 64
73
I
=
250
A
D
72
71
70
69
68
67
66
65
64
-50
-25
0
25
50
75
100
125
150
T J - Junction Temperature ( o C)
Fig.9 - Breakdown Voltage vs Junction Temperature
BV DSS - Breakdown Voltage (V)
80 f = 1MHz 70 V GS = 0V 60 50 Ciss 40 30 20
80
f
= 1MHz
70
V
GS = 0V
60
50
Ciss
40
30
20
Coss
10
Crss
0
0
5
10
15
20
25
V DS - Drain-to-Source Voltage (V)
Fig.11 - Capacitance vs Drain to Source Voltage
C - Capacitance (pF)
2N7002 MOUNTING PAD LAYOUT 0.031 MIN. (0.80) MIN. 0.037 (0.95) 0.043 (1.10) 0.106 (2.70) 0.035
2N7002 MOUNTING PAD LAYOUT 0.031 MIN. (0.80) MIN. 0.037 (0.95) 0.043 (1.10) 0.106 (2.70) 0.035

2N7002

MOUNTING PAD LAYOUT

2N7002 MOUNTING PAD LAYOUT 0.031 MIN. (0.80) MIN. 0.037 (0.95) 0.043 (1.10) 0.106 (2.70) 0.035 MIN.
0.031 MIN. (0.80) MIN. 0.037 (0.95) 0.043 (1.10) 0.106 (2.70) 0.035 MIN. (0.90) MIN. 0.043
0.031 MIN.
(0.80) MIN.
0.037
(0.95)
0.043
(1.10)
0.106
(2.70)
0.035 MIN.
(0.90) MIN.
0.043
(1.10)
0.078
(2.00)

ORDER INFORMATION

• Packing information T/R - 12K per 13" plastic Reel T/R - 3K per 7" plastic Reel

2N7002 Part No_packing code_Version 2N7002_R1_00001 2N7002_R2_00001 For example : RB500V-40 _ R2 _ 00001 Part
2N7002 Part No_packing code_Version 2N7002_R1_00001 2N7002_R2_00001 For example : RB500V-40 _ R2 _ 00001 Part

2N7002

Part No_packing code_Version

2N7002_R1_00001

2N7002_R2_00001

For example :

RB500V-40_R2_00001

Part No.
Part No.

Serial number Version code means HF Packing size code means 13" Packing type means T/R

 

Packing Code XX

 

Version Code XXXXX

Packing type

1 st Code

Packing size code

2 nd Code

HF or RoHS

1 st Code

2 nd ~5 th Code

Tape and Ammunition Box (T/B)

A

N/A

0

HF

 

0 serial number

Tape and Reel (T/R)

R

7"

1

RoHS

 

1 serial number

Bulk Packing

B

13"

2

     

(B/P)

Tube Packing

T

26mm

X

     

(T/P)

Tape and Reel (Right Oriented) (TRR)

S

52mm

Y

     

Tape and Reel (Left Oriented) (TRL)

L

PANASERT T/B CATHODE UP (PBCU)

U

     

FORMING

F

PANASERT T/B CATHODE DOWN (PBCD)

D

     
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