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VCC V CC3
TX EN Bias Circuitry
50 Ohm C1
RXOUT Match
C2
C3
C4
ANT_A
ANT_B
GND
GND
GND
GND
GND
24 23 22 21 20 19 18
GND 1 17 C4
VCC3 2 16 C3
VCC 3 15 C2
GND 4 14 C1
GND 5 13 PD_OUT
6 7 8 9 10 11 12
RX_OUT
TXEN
GND
GND
GND
TX_IN
N/C
1 GND Ground
2 VCC3 +3.3 V DC for 3rd stage power amplifier collector voltage
3 VCC +3.3 V DC
4,5 GND Ground
6 TX_IN Transmit Input
7,8,9 GND Ground
10 RX_OUT Receive Output
11 N/C No Connect
12 TXEN Transmit Enable
13 PD_OUT Power Detector
14 C1 Control 1 Input
15 C2 Control 2 Input
16 C3 Control 3 Input
17 C4 Control 4 Input
18 ANT_B Antenna B (50 ohm)
19,20 GND Ground
21 ANT_A Antenna A (50 ohm)
22,23,24 GND Ground
These are stress ratings only. Exposure to stresses beyond these maximum ratings may cause permanent damage
to, or affect the reliability of the device. Avoid operating the device outside the recommended operating conditions
defined below. This device is ESD sensitive. Handling and assembly of this device should be at ESD protected
workstations.
DC Electrical Characteristics
Conditions: VCC = VEN = 3.3 V, TA = 25 °C, as measured on SiGe Semiconductor’s SE2521A80-EV1 evaluation
board (de-embedded to device), all unused ports terminated with 50 ohms, unless otherwise noted
Symbol Parameter Conditions Min. Typ. Max. Unit
Logic Characteristics
Conditions: VCC = VEN = 3.3 V, TA = 25 °C, as measured on SiGe Semiconductor’s SE2521A80-EV1 evaluation
board (de-embedded to device), all unused ports terminated with 50 ohms, unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
Switch Characteristics
Conditions: VCC = VEN = 3.3 V, TA = 25 °C, as measured on SiGe Semiconductor’s SE2521A80-EV1 evaluation
board (de-embedded to device), all unused ports terminated with 50 ohms, unless otherwise noted.
Symbol Parameter Conditions Min. Typ. Max. Unit
Control Voltage
VCTL_ON - 3.0 - 3.6 V
(On State)
Control Voltage
VCTL_OFF - 0.0 - 0.2 V
(OFF State)
Low Loss Switch High State = VCTL_ON -
SWON 2.8 - VCC V
Control Voltage VCTL_OFF
High Loss Switch Low State = VCTL_OFF -
SWOFF 0 - 0.3 V
Control Voltage VCTL_OFF
On pin (C1,C2,C3,C4)
Switch Control Bias
ICTL_ON being driven high. RF - - 100 μA
Current (RF Applied)
Applied
Switch Control Bias On pin (C1,C2,C3,C4)
ICTL_ON - - 30 μA
Current (No RF) being driven high. No RF
Control Input
CCTL - - - 100 pF
Capacitance
AC Electrical Characteristics
Conditions: VCC = VEN = 3.3 V, TA = 25 °C, as measured on SiGe Semiconductor’s SE2521A80-EV1 evaluation
board (de-embedded to device), all unused ports terminated with 50 ohms, unless otherwise noted.
Symbol Parameter Condition Min. Typ. Max. Unit
Receive Characteristics
Conditions: VCC = VEN = 3.3 V, TA = 25 °C, as measured on SiGe Semiconductor’s SE2521A80-EV1 evaluation
board (de-embedded to device), all unused ports terminated with 50 ohms, unless otherwise noted.
Symbol Parameter Condition Min. Typ. Max. Unit
Conditions: VCC = VEN = 3.3 V, TA = 25 °C, as measured on SiGe Semiconductor’s SE2521A80-EV1 evaluation
board (de-embedded to device), unless otherwise noted.
Symbol Parameter Condition Min. Typ. Max. Unit
0.8
0.6
VDET (V)
0.4
0.2
0
5 7 9 11 13 15 17 19 21 23 25
POUT (dBm)
SE2521A80 802.11g EVM vs. POUT over Frequency SE2521A80 802.11g EVM vs. POUT over Voltage
2400 MHz 2425 MHz 2450 MHz 2500 MHz 2.7 V 3V 3.3 V 3.6 V
5 5
4 4
EVM (%)
3
EVM (%)
2 2
1 1
0 0
5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 11 12 13 14 15 16 17 18 19 20 21
POUT (dBm) POUT (dBm)
(a) (b)
Figure 4: SE2521A80 802.11g 54 Mbps EVM vs. POUT (a) Over Frequency (b) Over Voltage
802.11b Performance
SE2521A80 802.11b ACPR vs. POUT SE2521A80 Harmonics vs. POUT (802.11b CCK 1Mbps)
ACPR-ADJ ACPR-ALT 2fo 3fo
-30 -45
-35
Harmonic (dBm/1MHz)
-50
-40
ACPR (dBc)
-45 -55
-50
-60
-55
-60
-65
-65
-70 -70
15 16 17 18 19 20 21 22 23 24 25 10 11 12 13 14 15 16 17 18 19 20
POUT (dBm) POUT (dBm)
(a) (b)
Figure 5: SE2521A80 802.11b Performance (a) ACPR vs. POUT, (b) Harmonics vs. POUT
CW Typical Performance
SE2521A80 P1dB, Small Signal Gain vs. Frequency SE2521A80 ICC vs. POUT over Frequency
P1dB SSG 2400 MHz 2425 MHz 2450 MHz 2500 MHz
29 33 600
28.5 32
500
P1dB (dBm)
28 31
SSG (dB)
I CC (mA)
400
27.5 30
300
27 29
26.5 28
200
26 27 100
2400 2420 2440 2460 2480 2500 6 8 10 12 14 16 18 20 22 24 26
Frequency (MHz) POUT (dBm)
(a) (b)
0.8
0.6
VDET (V)
0.4
0.2
0
5 7 9 11 13 15 17 19 21 23 25
POUT (dBm)
(c)
Figure 6: SE2521A80 CW Typical Performance (a) P1dB, Gain vs. Frequency, (b) ICC vs. POUT over Frequency
and (c) Power Detector Response over Frequency
Package Information
Figure 7 shows the detailed device package diagram. The pads on the SiGe RF modules are plated with gold over
nickel, with a gold thickness of nominally 0.75 um. The modules can be reflowed onto FR4 based material using
eutectic SnPb or common tin based Pb free solder pastes.
5 4 3 2 1
1 2 3 4 5
6 24 24 6
8 22 22 8
GND GND
GND GND
21 9
9 21
GND GND
GND GND
10 20 20 10
GND GND
GND GND
GND GND
11 19 19 11
GND GND GND GND GND
GND GND GND GND GND
12 18 18 12
17 16 15 14 13
13 14 15 16 17
TOP SIDE
GROUND PAD
NOTES : SIGNAL PAD DETAIL
DETAIL
BOTTOM SIDE
GROUND SIGNAL
PAD DETAIL LAND DETAIL
VIA IN SIGNAL LAND TABLE
PIN NAME DESCRIPTION RECOMMENDED
NOTES :
RECOMMENDED FOOTPRINT
LGA100P800X700-24-610X505
PASTE SCREEN PATTERN
01
Branding Information
The device branding is shown in Figure 9.
Pin 1 Identifier
Terminal Finish
Pin 1
Part Number e4
SiGe
Lot Code
2521A80
Lot Code
Parameter Value
Devices Per Reel 2500
Reel Diameter 13 inches
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Email: sales@sige.com
United Kingdom
Phone: +44 1279 464217
Fax: +44 1279 464201
Product Preview
The datasheet contains information from the product concept specification. SiGe Semiconductor, Inc. reserves the right to change
information at any time without notification.
Preliminary Information
The datasheet contains information from the design target specification. SiGe Semiconductor, Inc. reserves the right to change
information at any time without notification.
Information furnished is believed to be accurate and reliable and is provided on an “as is” basis. SiGe Semiconductor, Inc. assumes
no responsibility or liability for the direct or indirect consequences of use of such information nor for any infringement of patents or
other rights of third parties, which may result from its use. No license or indemnity is granted by implication or otherwise under any
patent or other intellectual property rights of SiGe Semiconductor, Inc. or third parties. Specifications mentioned in this publication
are subject to change without notice. This publication supersedes and replaces all information previously supplied. SiGe
Semiconductor, Inc. products are NOT authorized for use in implantation or life support applications or systems without express
written approval from SiGe Semiconductor, Inc.