Freescale Semiconductor Document Number: MMG2401

Technical Data Rev. 3, 5/2006

Indium Gallium Phosphorus HBT

WLAN Power Amplifier
Designed for 802.11g and dual mode applications with frequencies from
2400 to 2500 MHz. MMG2401NR2
• 26.5 dBm P1dB @ 2450 MHz
• Power Gain: 27.5 dB Typ (@ f = 2450 MHz, Class AB)
• High Gain, High Efficiency and High Linearity
• EVM = 3% Typ @ Pout = +19 dBM, 14% PAE
• RoHS Compliant
2400- 2500 MHz, 27.5 dB, 26.5 dBm
• In Tape and Reel. R2 Suffix = 1,500 Units per 12 mm, 7 inch Reel. 802.11g WLAN POWER AMPLIFIER
InGaP HBT

CASE 1483 - 01
QFN 3x3

Table 1. Maximum Ratings

Rating Symbol Value Unit
Collector Supply VCC 5 V
Base Supply First Stage VB1 5 V
Base Supply Second Stage VB2 5 V
Detector Bias Supply VBIAS 5 V
DC Current IDC 171 mA

Table 2. Thermal Characteristics

Characteristic Symbol Value Unit
Thermal Resistance, Junction to Case RθJC 185 (1) °C/W
Case Operating Temperature Range TC - 40 to +85 °C
Storage Temperature Range Tstg - 55 to +150 °C

Table 3. ESD Protection Characteristics

Test Methodology Class
Human Body Model (per JESD22 - A114) 2 (Minimum)
Machine Model (per EIA/JESD22 - A115) A (Minimum)
Charge Device Model (per JESD22 - C101) II (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology Rating Package Peak Temperature Unit
Per JESD 22 - A113, IPC/JEDEC J - STD - 020 1 260 °C
1. Simulated.

© Freescale Semiconductor, Inc., 2006. All rights reserved. MMG2401NR2

RF Device Data
Freescale Semiconductor 1
Table 5. Electrical Characteristics (TA = 25°C unless otherwise noted.) VCC = 3.3 Vdc, VBIAS = 3 Vdc, ICQ = 83 mA, f = 2450 MHz
Characteristic Symbol Min Typ Max Unit
Output Power at 1dB Compression P1dB 24 26.5 — dBm
Power Gain Gp 26 27.5 29 dB
(Pout = 19 dBm)
Error Vector Magnitude EVM — 3 — %
(Pout = 19 dBm, 64 QAM/54 Mbps)
Total Current ICtotal — 210 — mA
(Pout = 19 dBm)
Quiescent Current IDCQ — 156 — mA
Bias Control Reference Current Iref — 8.4 — mA
(ICQ = 66 mA)
Gain Flatness GF — ±0.2 — dB
(Over 100 MHz)
Gain Variation over Temperature — — ±1 — dB
( - 40 to 85°C)
Input Return Loss IRL — - 10 - 7.5 dB
Reverse Isolation — — - 35 — dB
Second Harmonic — — - 45 — dBc
(Pout = 19 dBm)
Third Harmonic — — - 35 — dBc
(Pout = 19 dBm)
Ramp - On Time (10 - 90%) tON — 100 — ns

MMG2401NR2
RF Device Data
2 Freescale Semiconductor
Table 6. Functional Pin Description
Name Pin Description
Number
VCC1 NC VB2
VB1 1 Base power supply for first stage amplifier. 12 11 10
RFIN 2, 3 RF input for the power amplifier. This pin is DC - shorted to
GND and AC - coupled to the transistor base of the first VB1 1 9 RFOUT
stage. 2 8
RFIN RFOUT
VBIAS 4 Detector bias voltage supply. RFIN 3 7 VCC2
VREF 5 Detector output voltage reference. Vout - VREF is useful for
tracking detector performance over temperature. 4 5 6
VOUT 6 Detector output voltage. VBIAS VREF VOUT

VCC2 7 Collector power supply for second stage amplifier.

(Top View)
RFOUT 8, 9 RF output for the power amplifier. This pin is DC - coupled
and requires a DC - blocking series capacitor.
Figure 1. Pin Connections
VB2 10 Base power supply for second stage amplifier.
NC 11 Not connected.
VCC1 12 Collector power supply for first stage amplifier.
GND Backside The center metal base of the QFN 3x3 package provides
Center both DC and RF ground as well as heat sink contact for the
Metal power amplifier.

MMG2401NR2
RF Device Data
Freescale Semiconductor 3
 VB1 VCC1 VB2 VCC2

C11 C1 C2 C3 C4 C5 C12 C10 C9 C8 C7 C6

L1
RF RF
INPUT OUTPUT

Z1 Z2

C14 C15 C13

VBIAS VREF VOUT

Z1, Z2 0.10″ x 0.5395″ Microstrip

PCB Getek ML200M, 0.005″, εr = 3.8

Figure 2. MMG2401NR2 Test Circuit Schematic

Table 7. MMG2401NR2 Test Circuit Component Designations and Values

Part Description Part Number Manufacturer
C1, C6 1 μF Chip Capacitor 12065A105JAT2A AVX
C2, C7 0.1 μF Chip Capacitor 12065A104JAT2A AVX
C3, C8 0.01 μF Chip Capacitor 12065A103JAT2A AVX
C4, C9, C11, C12 100 pF Chip Capacitor 08055A101FAT2A AVX
C5, C10, C13, C14, C15 20 pF Chip Capacitor 12065A200CAT2A AVX
L1 7.5 nH Chip Inductor 0402CS - 7N5XJBC Coilcraft

MMG2401NR2
RF Device Data
4 Freescale Semiconductor
 C1
C2
C3

C4
C11
C5 C12

VB1 VB2

VCC1

VCC2

VBIAS
VREF
VOUT
L1

C14 C10
C15 C13

C9

C8

C7

C6

Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.

Figure 3. MMG2401NR2 Test Circuit Component Layout

MMG2401NR2
RF Device Data
Freescale Semiconductor 5
 TYPICAL CHARACTERISTICS

29 7

EVM, ERROR VECTOR MAGNITUDE (%)

VCC = 3.3 Vdc
6 VB1 = 2.9 Vdc
28 f = 2450 MHz
Gp, POWER GAIN (dB)

TC = 25_C 5

27 −40_C 4
85_C
3
26

2
85_C
25 VCC = 3.3 Vdc TC = 25_C
VB1 = 2.9 Vdc 1
−40_C
f = 2450 MHz
24 0
0 5 10 15 20 25 0 5 10 15 20 25
Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm)
Figure 4. Power Gain versus Output Power Figure 5. Error Vector Magnitude versus
Output Power

25 10

TC = −40_C Vout , DETECTOR OUTPUT VOLTAGE (V)

20
25_C
η, EFFICIENCY (%)

1
15
85_C
TC = 85_C
10
0.1
−40_C
VCC = 3.3 Vdc 25_C VCC = 3.3 Vdc
5
VB1 = 2.9 Vdc VB1 = 2.9 Vdc
f = 2450 MHz f = 2450 MHz
0 0.01
0 5 10 15 20 25 0 5 10 15 20 25
Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm)
Figure 6. Efficiency versus Output Power Figure 7. Detector Output Voltage versus
Output Power

4 250
VCC = 3.3 Vdc
3 VB1 = 2.9 Vdc
f = 2450 MHz 200
I CC , TOTAL CURRENT (mA)

2
TC = 85_C
AM to PM (_)

1 150
25_C
0
100
−1 −40_C
−2 VCC = 3.3 Vdc
50
VB1 = 2.9 Vdc
−3
f = 2450 MHz
−4 0
0 5 10 15 20 25 30 0 5 10 15 20 25
Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (dBm)
Figure 8. AM to PM versus Output Power Figure 9. Total Current versus Output Power

MMG2401NR2
RF Device Data
6 Freescale Semiconductor
 TYPICAL CHARACTERISTICS

35 0

IRL, INPUT RETURN LOSS (dB)

30 −5
G p , POWER GAIN (dB)

25 −10

20 −15

15 −20
VCC = 3.3 Vdc VCC = 3.3 Vdc
VB1 = 2.9 Vdc VB1 = 2.9 Vdc
10 −25
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8
f, FREQUENCY (GHz) f, FREQUENCY (GHz)
Figure 10. Power Gain (S21) versus Figure 11. Input Return Loss (S11) versus
Frequency Frequency
REVERSE TRANSCONDUCTANCE ISOLATION (dB)

−20 0

−30 ORL, OUTPUT RETURN LOSS (dB) −5

−40 −10

−50 −15

−60 −20
VCC = 3.3 Vdc VCC = 3.3 Vdc
VB1 = 2.9 Vdc VB1 = 2.9 Vdc
−70 −25
2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8
f, FREQUENCY (GHz) f, FREQUENCY (GHz)
Figure 12. Reverse Transconductance Figure 13. Output Return Loss (S22) versus
Isolation (S12) versus Frequency Frequency

MMG2401NR2
RF Device Data
Freescale Semiconductor 7
 A 4X D
C b 1

E
E/2
PIN1 ID
N=12
4X D
2
0.45 1
1 2 F (Ny - 1)e
2 B 3 F/2
3 L
0.25 MIN.

0.25 MIN. e
(Nx - 1)e 2
SEATING
PLANE

TOP VIEW SIDE VIEW BOTTOM VIEW

NOTES:
1. DIMENSION b APPLIES TO PLATED TERMINAL AND IS
MEASURED BETWEEN 0.20 AND 0.25 MM FROM
TERMINAL TIP.
2. N IS THE NUMBER OF TERMINALS (12).
Nx IS THE NUMBER OF TERMINALS IN X−DIRECTION
AND
Ny IS THE NUMBER OF TERMINALS IN Y−DIRECTION.
3. ALL DIMENSIONS ARE IN MILLIMETERS.

DIM MIN NOM MAX

A 3.00 BSC
B 3.00 BSC
C − 0.85 1.00
D 0.24 0.42 0.60 STANDARD
E SEE EXPOSED PAD
F SEE EXPOSED PAD
b 0.18 0.23 0.30
e 0.50 BSC DETAIL ”A” - PIN #1 ID AND TIE BAR MARK OPTION
Nx 3
Ny 3

SYMBOLS E F
MIN NOM MAX MIN NOM MAX
EXPOSED PAD 1.15 1.30 1.45 1.15 1.30 1.45

Figure 14. MMG2401NR2 Specific Mechanical Outline Information

MMG2401NR2
RF Device Data
8 Freescale Semiconductor
 PACKAGE DIMENSIONS

3 A
PIN 1 INDEX M
AREA 2X
0.1 C

DETAIL G

B M
2X
0.1 C

1.55
1.25
10 12

EXPOSED DIE
ATTACH PAD DETAIL M
PIN 1 INDEX

9
1

1.55
1.25

3
7
DETAIL N

NOTES:
1. ALL DIMENSIONS ARE IN MILLIMETERS.
6 4
12X 0.75 2. INTERPRET DIMENSIONS AND
TOLERANCES PER ASME Y14.5M, 1994.
0.50 3. THE COMPLETE JEDEC DESIGNATOR FOR
12X 0.30 THIS PACKAGE IS: HF−PQFP−N.
9 0.18 8X 0.5 4. FOR ANVIL SINGULATED QFN PACKAGES,
MAXIMUM DRAFT ANGLED IS 12 _.
0.10 M C A B 5. PACKAGE WARPAGE MAX 0.05 MM.
6. CORNER CHAMFER MAY NOT BE PRESENT.
DIMENSIONS OF OPTIONAL FEATURES ARE
FOR REFERENCE ONLY.
VIEW M - M 7. CORNER LEADS CAN BE USED FOR
THERMAL OR GROUND AND ARE TIED TO
THE DIE ATTACH PAD. THESE LEADS ARE
NOT INCLUDED IN THE LEAD COUNT.
8. COPLANARITY APPLIES TO LEAD, CORNER
LEADS, AND DIE ATTACH PAD.
9. THIS DIMENSION APPLIES TO PLATED
TERMINAL AND IS MEASURED BETWEEN
0.20 MM AND 0.25 MM FROM TERMINAL TIP.

CASE 1483 - 01
ISSUE A
QFN 3x3 Page 1 of 3

MMG2401NR2
RF Device Data
Freescale Semiconductor 9
 0.60
(45_) 0.24

(0.25) (0.25)
0.60
0.24
DETAIL N DETAIL N
PREFERRED CORNER CONFIGURATION CORNER CONFIGURATION

6 6

0.1 C

1.0 1.00
0.8 0.75

0.05 C 8

0.05
C SEATING
0.00
DETAIL G PLANE
VIEW ROTATED 90_ CW

CASE 1483 - 01
ISSUE A
QFN 3x3
Page 2 of 3

MMG2401NR2
RF Device Data
10 Freescale Semiconductor
 0.217
0.137

DETAIL S
(0.25)

0.217
0.137

(0.1)

(0.25)
DETAIL M DETAIL S
PREFERRED BACKSIDE PIN 1 INDEX BACKSIDE PIN 1 INDEX

7 TIE BAR MARK OPTION

4X 0.23
0.13
PIN 1 ID

(45_ )

4X 0.65
0.30

(0.45)

(0.35)
R0.2
PIN 1 ID
DETAIL M DETAIL M
BACKSIDE PIN 1 INDEX OPTION BACKSIDE PIN 1 INDEX OPTION

CASE 1483 - 01
ISSUE A
QFN 3x3
Page 3 of 3

MMG2401NR2
RF Device Data
Freescale Semiconductor 11
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MMG2401NR2
Document Number: MMG2401 RF Device Data
Rev. 3, 5/2006
12 Freescale Semiconductor