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  AON7406
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AON7406

30V N-Channel MOSFET

30V N-Channel MOSFET

General Description

 

Product Summary

 

• The AON7406 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in SMPS and general purpose applications.

V DS

30V

I D (at V GS =10V)

 

25A

R DS(ON) (at V GS =10V)

< 17m

 

R DS(ON) (at

V GS =4.5V)

< 23m HBM Class 2

Typical ESD protection

• RoHS and Halogen-Free Compliant

   
 

100% UIS Tested 100% R g Tested

 
  100% UIS Tested 100% R g Tested  
 

DFN 3x3A

 

D

Top View

Pin 1
Pin 1

Bottom View

Pin 1
Pin 1

S

S

S

G

Top View

Top View D D D D
Top View D D D D
Top View D D D D
Top View D D D D
Top View D D D D
Top View D D D D
Top View D D D D
Top View D D D D
Top View D D D D

D

D

D

D

G S
G
S

Absolute Maximum Ratings T A =25°C unless otherwise noted

 

Parameter

Symbol

 

Maximum

Units

Drain-Source Voltage

 

V DS

 

30

V

Gate-Source Voltage

 

V GS

 

±20

V

Continuous Drain

T

C =25°C

I D

 

25

 

Current

T

C =100°C

 

15

A

Pulsed Drain Current C

 

I DM

 

50

Continuous Drain

T

A =25°C

I DSM

 

9

A

Current

T

A =70°C

 

7

Avalanche Current C

 

I AS , I AR

 

19

A

Avalanche energy L=0.1mH C

 

E AS , E AR

 

18

mJ

 

T

C =25°C

P D

 

15.5

W

Power Dissipation B

T

C =100°C

 

6

 

T

A =25°C

P DSM

 

3.1

W

Power Dissipation A

T

A =70°C

 

2

Junction and Storage Temperature Range

 

T J , T STG

 

-55 to 150

°C

Thermal Characteristics

Parameter

Symbol

Typ

Max

Units

Maximum Junction-to-Ambient A

t

10s

R JA

30

40

°C/W

Maximum Junction-to-Ambient A D

Steady-State

60

75

°C/W

Maximum Junction-to-Case

Steady-State

R JC

6.6

8

°C/W

AON7406
AON7406
AON7406

AON7406

AON7406

Electrical Characteristics (T J =25°C unless otherwise noted)

 

Symbol

Parameter

Conditions

 

Min

Typ

Max

Units

 

STATIC PARAMETERS

 
 

BV DSS

Drain-Source Breakdown Voltage

I D =250 A, V GS =0V

 

30

   

V

I

 

Zero Gate Voltage Drain Current

V DS =30V, V GS =0V

     

1

 

DSS

T

J =55°C

   

5

A

I

GSS

Gate-Body leakage current

V DS =0V, V GS = ±16V

     

10

A

 

V

GS(th)

Gate Threshold Voltage

V DS =V GS I D =250 A

 

1.2

1.8

2.4

V

I

D(ON)

On state drain current

V GS =10V, V DS =5V

 

50

   

A

     

V GS =10V, I D =9A

   

14

17

 

R

DS(ON)

Static Drain-Source On-Resistance

T

J =125°C

 

20

24

m

 

V GS =4.5V, I D =8A

   

18

23

m

 

g

FS

Forward Transconductance

V DS =5V, I D =9A

   

40

 

S

 

V

SD

Diode Forward Voltage

I S =1A,V GS =0V

   

0.75

1

V

I

S

Maximum Body-Diode Continuous Current

     

15

A

 

DYNAMIC PARAMETERS

 
 

C

iss

Input Capacitance

 

600

740

888

pF

 

C

oss

Output Capacitance

V GS =0V, V DS =15V, f=1MHz

77

110

145

pF

 

C

rss

Reverse Transfer Capacitance

50

82

115

pF

 

R

g

Gate resistance

V GS =0V, V DS =0V, f=1MHz

 

0.5

1.1

1.7

 
 

SWITCHING PARAMETERS

 
 

Q

g (10V)

Total Gate Charge

 

12

15

18

nC

 

Q

g (4.5V)

Total Gate Charge

V GS =10V, V DS =15V, I D =9A

6

7.5

9

nC

 

Q

gs

Gate Source Charge

 

2.5

 

nC

 

Q

gd

Gate Drain Charge

   

3

 

nC

t

D(on)

Turn-On DelayTime

   

5

 

ns

t

r

Turn-On Rise Time

V GS =10V, V DS =15V, R L =1.67 ,

 

3.5

 

ns

t

D(off)

Turn-Off DelayTime

R

GEN =3

 

19

 

ns

t

f

Turn-Off Fall Time

   

3.5

 

ns

t

rr

Body Diode Reverse Recovery Time

I F =9A, dI/dt=500A/ s

 

6

8

10

ns

 

Q

rr

Body Diode Reverse Recovery Charge

I F =9A, dI/dt=500A/ s

 

14

18

22

nC

A. The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The

Power dissipation P DSM is based on R JA t 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design.

B. The power dissipation P D is based on T J(MAX) =150°C, using junction-to-case thermal resistance, and is more useful in setting the upper

dissipation limit for cases where additional heatsinking is used.

C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150°C. Ratings are based on low frequency and duty cycles to keep

initial T J =25°C.

D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient.

E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max.

F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming

a maximum junction temperature of T J(MAX) =150°C. The SOA curve provides a single pulse rating.

G. The maximum current rating is package limited.

H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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AON7406

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 10V 4V 25 5V 20 3V 15 10 5 V GS =2.5V 0 0
30
10V
4V
25
5V
20
3V
15
10
5
V
GS =2.5V
0
0
1
2
3
4
5
I D (A)

V DS (Volts) Fig 1: On-Region Characteristics (Note E)

30 V DS =5V 25 20 15 10 125°C 5 25°C 0 1 1.5 2
30
V
DS =5V
25
20
15
10
125°C
5
25°C
0
1
1.5
2
2.5
3
3.5
4
V
GS (Volts)
I D (A)

Figure 2: Transfer Characteristics (Note E)

30 25 V GS =4.5V 20 15 10 V GS =10V 5 0 0 5
30
25
V
GS =4.5V
20
15
10
V
GS =10V
5
0
0 5
10
15
20
R DS(ON) (m )
1.8 1.6 V GS =10V I D =9A 1.4 17 5 1.2 2 V GS
1.8
1.6
V
GS =10V
I
D =9A
1.4
17
5
1.2
2
V
GS =4.5V
10
I
=8A
D
1
0.8
0 25
50
75
100
125
150
175
0
Temperature (°C)
Normalized On-Resistance

1.0E+02

1.0E+01

40

1.0E+00

1.0E-01

1.0E-02

1.0E-03

1.0E-04

1.0E-05

I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)

40 I D =9A 35 30 125° C 25 20 15 25°C 10 2 4
40
I
D =9A
35
30
125°
C
25
20
15
25°C
10
2 4
6
8
10
R DS(ON) (m )
I S (A)

Figure 4: On-Resistance vs. Junction Temperature

18

(Note E) 125°C 25° C 0.0 0.2 0.4 0.6 0.8 1.0 1.2
(Note E)
125°C
25°
C
0.0
0.2
0.4
0.6
0.8
1.0
1.2

V GS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)

V SD (Volts) Figure 6: Body-Diode Characteristics (Note E)

AON7406
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AON7406
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1200 V DS =15V I D =9A 1000 8
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
V
DS =15V
I
D =9A
1000
8
800
6
600
4
400
2
200
0
0
0
3
6
9
12
15
Q g (nC)
Figure 7: Gate-Charge Characteristics
V GS (Volts)
Capacitance (pF)
100.0 10 s R 10 s DS(ON) 10.0 limited 100 s 1.0 1ms DC 10ms
100.0
10
s
R
10 s
DS(ON)
10.0
limited
100
s
1.0
1ms
DC
10ms
T
C
0.1
J(Max) =150°
T
C =25°
C
0.0
I D (Amps)
Power (W)

200

160

120

80

40

0

C iss C oss C rss 0 5 10 15 20 25 30 V DS
C iss
C oss
C rss
0
5
10
15
20
25
30
V DS (Volts)
Figure 8: Capacitance Characteristics
T J(Max) =150°C T C =25 ° C 17 5 2 10
T
J(Max) =150°C
T
C =25
° C
17
5
2
10
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 0 10 V DS (Volts)
0.01
0.1
1
10
100
0.0001
0.001
0.01
0.1
1
0 10
V DS (Volts)
Pulse Width (s)
18
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-to-
Case (Note F)
10
D=T on /T
In descending order
D=0.5, 0.3,
0.1, 0.05, 0.02, 0.01, single
pulse
T J,PK =T C +P DM .Z
JC .R
JC
R JC =8°C/W
40
1
P
0.1
D
T
on
T
Single
Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
Z JC Normalized Transient
Thermal Resistance

Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

AON7406
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AON7406

AON7406

AON7406

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 T A =25 ° C T A =100°C T A =150 ° C 10
100
T
A =25
°
C
T
A =100°C
T A =150
°
C
10
T
A =125°
C
1
1
10
100
1000
I AR (A) Peak Avalanche Current
20 16 12 8 4 0 0 25 50 75 100 125 150 Power Dissipation
20
16
12
8
4
0
0
25
50
75
100
125
150
Power Dissipation (W)

Time in avalanche, t A ( s) Figure 12: Single Pulse Avalanche capability (Note

C)

10000 30 25 1000 20 100 15 10 10 5 0 1 Current rating I
10000
30
25
1000
20
100
15
10
10
5
0
1
Current rating I D (A)
Power (W)
T CASE (°°°°C) Figure 13: Power De-rating (Note F) T A =25°C 17 5 2
T CASE (°°°°C)
Figure 13: Power De-rating (Note F)
T A =25°C
17
5
2
10
25 50 10 0 0 75 100 125 150 0.00001 0.001 0.1 1000 T CASE
25
50
10
0
0
75
100
125
150
0.00001
0.001
0.1
1000
T CASE (°°°°C)
Figure 14: Current De-rating (Note F)
Pulse Width (s)
Fi ure 15: Sin le Pulse Power Ratin
Ambient (Note H)
18
g
g
g
Junction-to-
10
D=T on /T
In
descending
order
D=0.5, 0.3, 0.1, 0.05,
0.02,
0.01,
single pulse
T J,PK =T A +P DM .Z JA .R
JA
1
R JA =75°
C/W
40
0.1
P
D
0.01
Single
Pulse
T
on
T
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Z JA Normalized Transient
Thermal Resistance

Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

AON7406
AON7406
AON7406

AON7406

AON7406

Gate Charge Test Circuit & Waveform

Vgs

+ VDC + - Vds VDC - DUT Vgs Ig
+
VDC
+
-
Vds
VDC
-
DUT
Vgs
Ig

Vgs

10V

Vgs 10V  
 

Qg

   
   
   
Qgs Qgd

Qgs

Qgd

   
Vgs 10V   Qg         Qgs Qgd    
Vgs 10V   Qg         Qgs Qgd    

Charge

Resistive Switching Test Circuit & Waveforms

RL

Vds + DUT Vgs VDC Rg -
Vds
+
DUT
Vgs
VDC
Rg
-

Vdd

Vds

90% 10% Vgs t t r d(on) t f t d(off) t t on off
90%
10%
Vgs
t
t r
d(on)
t f
t d(off)
t
t on
off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

Vgs

 
  L  

L

  L  
  L  
  L  
  L  
 

Vds

Vds            
           

Id

Id
+ Vgs VDC -
+
Vgs
VDC
-
 

Vgs

Rg
Rg
Vgs Rg
 
Vgs Rg      
 
Vgs Rg      
 
       
  DUT
  DUT
 

DUT

  DUT

Vdd

2 = 1/2 LI AR E AR BV DSS Vds I AR Id Vgs
2
= 1/2 LI AR
E AR
BV DSS
Vds
I
AR
Id
Vgs

Diode Recovery Test Circuit & Waveforms

Vds + DUT Vds - L Isd + Vgs VDC - Ig
Vds +
DUT
Vds -
L
Isd
+
Vgs
VDC
-
Ig

Vdd

= - Idt Q rr Vgs t rr Isd I F dI/dt I RM Vds
= -
Idt
Q rr
Vgs
t rr
Isd
I F
dI/dt
I RM
Vds

Vdd