AON7406

30V N-Channel MOSFET

General Description Product Summary

The AON7406 uses advanced trench technology and VDS 30V

design to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 25A
This device is suitable for use in SMPS and general RDS(ON) (at VGS=10V) < 17m
purpose applications.
RDS(ON) (at VGS=4.5V) < 23m
Typical ESD protection HBM Class 2
RoHS and Halogen-Free Compliant
100% UIS Tested
100% Rg Tested

DFN 3x3A
Top View Bottom View D
Top View

S D
S D
S D G
G D
Pin 1 S
Pin 1

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 20 V
Continuous Drain TC=25C 25
ID
Current TC=100C 15 A
C
Pulsed Drain Current IDM 50
Continuous Drain TA=25C 9
IDSM A
Current TA=70C 7
Avalanche Current C IAS, IAR 19 A
Avalanche energy L=0.1mH C EAS, EAR 18 mJ
TC=25C 15.5
PD W
Power Dissipation B TC=100C 6
TA=25C 3.1
PDSM W
Power Dissipation A TA=70C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t 10s 30 40 C/W
RJA
Maximum Junction-to-Ambient A D Steady-State 60 75 C/W
Maximum Junction-to-Case Steady-State RJC 6.6 8 C/W

Rev.6.0: July 2013 www.aosmd.com Page 1 of 6

 AON7406

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250A, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current A
TJ=55C 5
IGSS Gate-Body leakage current VDS=0V, VGS= 16V 10 A
VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 1.2 1.8 2.4 V
ID(ON) On state drain current VGS=10V, VDS=5V 50 A
VGS=10V, ID=9A 14 17
m
RDS(ON) Static Drain-Source On-Resistance TJ=125C 20 24
VGS=4.5V, ID=8A 18 23 m
gFS Forward Transconductance VDS=5V, ID=9A 40 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 15 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 600 740 888 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 77 110 145 pF
Crss Reverse Transfer Capacitance 50 82 115 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.5 1.1 1.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 12 15 18 nC
Qg(4.5V) Total Gate Charge 6 7.5 9 nC
VGS=10V, VDS=15V, ID=9A
Qgs Gate Source Charge 2.5 nC
Qgd Gate Drain Charge 3 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.67, 3.5 ns
tD(off) Turn-Off DelayTime RGEN=3 19 ns
tf Turn-Off Fall Time 3.5 ns
trr Body Diode Reverse Recovery Time IF=9A, dI/dt=500A/s 6 8 10 ns
Qrr Body Diode Reverse Recovery Charge IF=9A, dI/dt=500A/s 14 18 22 nC
A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
Power dissipation PDSM is based on R JA t 10s value and the maximum allowed junction temperature of 150C. The value in any given
application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25C.
D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.6.0: July 2013 www.aosmd.com Page 2 of 6

 AON7406

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 30
10V
4V VDS=5V
25 25

5V
20 20
3V
ID (A)

ID(A)
15 15

10 10 125C

5 VGS=2.5V 5 25C

0 0
0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

30 1.8

Normalized On-Resistance
25
1.6 VGS=10V
VGS=4.5V ID=9A
20
)
RDS(ON) (m

1.4
17
15
5
1.2 2
10 VGS=10V VGS=4.5V
ID=8A
10
1
5

0 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

40 1.0E+02
ID=9A
35 1.0E+01
40
1.0E+00
30
)
RDS(ON) (m

1.0E-01 125C
IS (A)

125C
25
1.0E-02
20 25C
1.0E-03

15 25C 1.0E-04

10 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev.6.0: July 2013 www.aosmd.com Page 3 of 6

 AON7406

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=15V
ID=9A
1000
8
Ciss

Capacitance (pF)
800
VGS (Volts)

6
600
4
400 Coss

2
200

Crss
0 0
0 3 6 9 12 15 0 5 10 15 20 25 30
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 200

10s
RDS(ON) 10s 160
10.0 TJ(Max)=150C
limited
100s TC=25C
ID (Amps)

Power (W)

120 17
1.0 DC 1ms 5
10ms 80 2
TJ(Max)=150C 10
0.1
TC=25C 40

0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18Junction-to-
Figure 10: Single Pulse Power Rating
Operating Area (Note F) Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZJC.RJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z JC Normalized Transient
Thermal Resistance

RJC=8C/W 40
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev.6.0: July 2013 www.aosmd.com Page 4 of 6

 AON7406

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 20
TA=25C
IAR (A) Peak Avalanche Current

TA=100C
16

Power Dissipation (W)

TA=150C
12
10

TA=125C 8

1 0
1 10 100 1000 0 25 50 75 100 125 150
s)
Time in avalanche, tA ( C)
TCASE (
Figure 12: Single Pulse Avalanche capability (Note Figure 13: Power De-rating (Note F)
C)

30 10000

25 TA=25C
1000
Current rating ID(A)

20
17
Power (W)

100
5
15
2
10
10
10
5

0 1
0 25 50 75 100 125 150 0.00001 0.001 0.1 10 0 1000
C)
TCASE ( Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Z JA Normalized Transient

TJ,PK=TA+PDM.ZJA.RJA
Thermal Resistance

1 RJA=75C/W 40

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

Rev.6.0: July 2013 www.aosmd.com Page 5 of 6

 AON7406

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev.6.0: July 2013 www.aosmd.com Page 6 of 6