Autohauler Electromechanical Design

Adam Villareal

advillareal@cpp.edu

March 17th, 2017

Technical Report

Department of Electromechanical Systems Engineering Technology

California State Polytechnic University, Pomona

ETT321 Final

Winter 2017

I hereby state that all of the work is my own and that I did not communicate any of my work with others in
the class, nor ask for help from individuals not in the class. Any material that is not my own work is
referenced accordingly, and provided to complete the package. Due at 3/17/2017 11:59pm. Please slide a
copy under my door if you are submitting a physical copy otherwise submit your work electronically via
Blackboard.

If you are submitting a hardcopy of your written work, include any associated data sheets that complete your
design as well. Place all contents into a sealed large envelop the size of the submitted material i.e. 9x12

Signature: Date: 17 March 2017

It is the year 2115, and we have successfully discovered unobtainium and have begun mining operations for
extracting it. Being that it is very dangerous to humans to perform the mining operations; autonomous mining carts
are being developed to aid in the mining operations. You are responsible for developing the initial mechanical /
electrical interface designs with supporting analysis. To do this you will need to develop the requirements for the
motors as well as addressing the needs for a basic electronics drive system.

State any assumptions and cite reference all material (provide links or attachments) such as data sheets etc...
 Abstract

Weve finally found unobtainium. While there were many doubters to the existence of this element, James
Cameron, visionary he is, knew that incorporating the element in Avatar (2009) would lead it to become the most
historically accurate movie of all time. We at Obtainium have a mission to obtain the unobtainable. This report
will detail the electro-mechanical design system of our Autohauler named the Obtainivroom , detailing the design
of the motor, drive electronics, and sensor which enables our autonomous carts to locate unobtainium.

Initial Design Steps

These initial conditions are applied to our design. The cart must be able to hold 1,000lbs, it must travel at a
max speed of 2.5 ft/s, the voltage must be between 12V and 96V, and it needs to be able to travel up an incline of
20 with a coefficient of friction of 0.4. Im taking a factor of safety for weight making my design weight to be
1,200lbs as well as a motor efficiency of 60%. The cart will be all wheel drive in order to traverse all terrains more
easily than just rear wheel or front wheel drive would be.

Figure 1: Detailed drawing of Obtainivroom showing basic forces. It is currently hanging in the Louvre Museum.

In order to find force needed to move the cart I used the following calculation

( ) ( )
where is the coefficient of friction, W is the weight, and is the incline. Next I found the rotational speed of the
wheels required to move at 2.5ft/s using

where the diameter of the wheels D = 16. Next we need to find the mechanical power required to move the
Autohauler at 2.5ft/s which is simply

This value can be converted to watts in order to find electrical power needed Pe = 2920.01W. We then need to take
efficiency into account and distribute the power to all four wheels which is

or to round down, 1200W/wheel because we already incorporated factor of safety. Next we need the torque in each
motor which can be calculated as

Using a gear ratio of approximately 20:1 we find that . Assuming a

battery voltage of 48V for standard electric motors, we find a current of I=25A using P=IV.

Motor Design

The first step of our motor design is to find the field and armature resistance. Im going to be using a series
motor so the field resistance is equal to the armature resistance, the voltage induced across the armature is 48V, and
the current is 25A. To find armature resistance we use where =0 at rest. After calculating I found,

Next we need to find the cutoff frequency because we want the motor to activate when the signal reaches 10krad/s in
which we need the inductance. To find the inductance I used

Now that we have the armature resistance and inductance we can draw the basic schematic of the motor using
MultiSim.
 Figure 2: Motor Schematic

From here I found that at the motors full rotational velocity, the back emf at max rotational speed was,

This value makes sense because when the motor is running at its top speed of 750RPM it does not need current to
keep it at 750RPM without friction, however since it immediately loses some speed due to friction and gravity it
supplies a small amount of current in order to sustain that max speed.

Going under the assumptions that moment of inertia J = 0.04 and the damping coefficient b = 0.2 the
transfer function can be written as follows

( ) ( )
( )
( ) ( ) ( )( )

( )( )

Using MATLAB I graphed the frequency response of H(s) for the magnitude.
 Figure 3: The bode plot shows that the motor is a low-pass filter which is fantastic news because motors are low pass
filters!

Drive Electronics

To drive the motors we want to develop a BJT based transistor switching scheme for direction and velocity
control so the motors can move forwards and backwards as well as adjusting the velocity for varying inclines. Ill be
utilizing an H-Bridge circuit with TIP102 NPN Darlington transistors and complimentary TIP 107 PNP Darlington
transistors for directional control and speed control because they can handle the 48V of the motor easily as well as
being a Darlington pair so they have phenomenally high current gain values of up to 20000. These transistors also
freewheeling diodes included in them so you do not need to include extra diodes to prevent back flow shorting the
circuit.
 Figure 4: H-Bridge Circuit for Speed and Direction Control

This circuit works because Q2 and Q3 become connected to ground when Q4 and Q1 are powered and vice
versa, allowing the motor spin both directions. A potential downside to this circuit is that the H-Bridge views the
motor as just an inductor and resistor which can provide voltage spikes when the inductor is turned on since
but this is why we have transistors that can handle more than the expected load of 48V.

At the stall condition the max allowable current through the circuit is 8A. The ( ) max for the
TIP 102/107 so max power dissipated by each transistor is which means assuming that
only two transistors are on at any given time, the max power dissipated by each motor driver is 12W.

Unobtainium Filter

The final part of this report will detail the filter design for locating unobtainium. Well be using a simple
band-pass filter with a 40dB roll-off, a bandwidth of 10MHz, and a resonant frequency of 10MHz.

I started finding the cut-off frequencies by setting up a series of equations relating the frequencies to each
other as follows:

Solving for 1 I found that fL=6.18MHz, therefore fH=16.18MHz. To

double check my values, I calculated

Im assuming a value of 5m for the resistors and solving for the both the lower and higher cut-off frequencies
capacitance I used

Figure 5: Unobtainium Filter Schematic in Multisim

Figure 6: Filter AC Sweep shows that it has a 40db/decade Gain and Drop-off
 Closing Statements

This design should provide the perfect solution for autonomously mining unobtainium. The 48V motors
supply enough force to carry a design load of 1200lb up a 20 slope and a high torque to reach the 2.5ft/s as quickly
as possible without consuming too much power. The motor controller will allow for forward and backwards motion
as well as the ability to control the speed depending on how much resistance the cart is moving, but also will not
burn out the motor if it reaches a stall point. It will also be able to locate unobtainium using an onboard filter so it
can truly be autonomous. Overall, while this was challenging to design, it was fun figuring out how to combine
everything weve learned this quarter into one final project that stretched my knowledge of motors and circuits.
 References

Boskovich, Scott. ETT 321 Lecture Notes. California State Polytechnic University, Pomona, 2017.

Hughes, Austin, and Bill Drury. Electric Motors and Drives: Fundamentals, Types and Applications. Oxford:
Newnes, 2013. Print.

All spec sheets references are attached.

 TIP100/101/102
TIP100/101/102

Monolithic Construction With Built In Base-

Emitter Shunt Resistors
High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A (Min.)
Collector-Emitter Sustaining Voltage
Low Collector-Emitter Saturation Voltage
Industrial Use TO-220
1
Complementary to TIP105/106/107
1.Base 2.Collector 3.Emitter

NPN Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted Equivalent Circuit
Symbol Parameter Value Units C

VCBO Collector-Base Voltage : TIP100 60 V

: TIP101 80 V
: TIP102 100 V B
VCEO Collector-Emitter Voltage : TIP100 60 V
: TIP101 80 V
: TIP102 100 V
VEBO Emitter-Base Voltage 5 V R1 R2
IC Collector Current (DC) 8 A
R 1 10 k E
ICP Collector Current (Pulse) 15 A R 2 0.6 k
IB Base Current (DC) 1 A
PC Collector Dissipation (Ta=25C) 2 W
Collector Dissipation (TC=25C) 80 W
TJ Junction Temperature 150 C
TSTG Storage Temperature - 65 ~ 150 C

Electrical Characteristics TC=25C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP100 IC = 30mA, IB = 0 60 V
: TIP101 80 V
: TIP102 100 V
ICEO Collector Cut-off Current
: TIP100 VCE = 30V, IB = 0 50 A
: TIP101 VCE = 40V, IB = 0 50 A
: TIP102 VCE = 50V, IB = 0 50 A
ICBO Collector Cut-off Current
: TIP100 VCE = 60V, IE = 0 50 A
: TIP101 VCE = 80V, IE = 0 50 A
: TIP102 VCE = 100V, IE = 0 50 A
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA
hFE DC Current Gain VCE = 4V, IC = 3A 1000 20000
VCE = 4V, IC = 8A 200
VCE(sat) Collector-Emitter Saturation Voltage IC = 3A, IB = 6mA 2 V
IC = 8A, IB = 80mA 2.5 V
VBE(on) Base-Emitter ON Voltage VCE = 4V, IC = 8A 2.8 V
Cob Output Capacitance VCB = 10V, IE = 0, f = 0.1MHz 200 pF

2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 TIP100/101/102
Typical Characteristics

5
10k
IB = 1mA uA
700 uA VCE = 4V
600 uA
0.9mA 500
IC[A], COLLECTOR CURRENT

4 0.8mA
A
400u

hFE, DC CURRENT GAIN

3
IB = 300 uA

1k

2
IB = 200 uA

IB = 100 uA

0
100
0 1 2 3 4 5
0.1 1 10

VCE[V], COLLECTOR-EMITTER VOLTAGE Ic[A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

10k 10k

Ic = 500 IB

1k
Cob[pF], CAPACITANCE

V BE(sat)

1k 100

V CE(sat)

10

100 1
0.1 1 10 100 0.1 1 10 100

IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance

Base-Emitter Saturation Voltage

100 120

1ms 100
PC[W], POWER DISSIPATION
IC[A], COLLECTOR CURRENT

10

10
0
s

80
DC
5m
s

1 60

40

0.1 TIP100
TIP101 20

TIP102

0.01 0
0.1 1 10 100 0 25 50 75 100 125 150 175

VCE [V], COLLECTOR-EMITTER VOLTAGE o

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area Figure 6. Power Derating

2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 TIP100/101/102
Package Demensions

TO-220

1.30 0.10 9.90 0.20 4.50 0.20

(8.70)

2.80 0.10
(1.70)

+0.10
3.60 0.10 1.30 0.05

18.95MAX.
(3.70)

15.90 0.20
9.20 0.20

(1.46)

(3.00)
(45
)
(1.00)
13.08 0.20

10.08 0.30

1.27 0.10 1.52 0.10

0.80 0.10 +0.10

0.50 0.05 2.40 0.20
2.54TYP 2.54TYP
[2.54 0.20] [2.54 0.20]

10.00 0.20

Dimensions in Millimeters

2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx FAST OPTOPLANAR STAR*POWER
Bottomless FASTr PACMAN Stealth
CoolFET FRFET POP SuperSOT-3
CROSSVOLT GlobalOptoisolator Power247 SuperSOT-6
DenseTrench GTO PowerTrench SuperSOT-8
DOME HiSeC QFET SyncFET
EcoSPARK ISOPLANAR QS TruTranslation
E2CMOS LittleFET QT Optoelectronics TinyLogic
EnSigna MicroFET Quiet Series UHC
FACT MICROWIRE SLIENT SWITCHER UltraFET
FACT Quiet Series OPTOLOGIC SMART START VCX
STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2001 Fairchild Semiconductor Corporation Rev. H3

 TIP105/106/107
TIP105/106/107

Monolithic Construction With Built In Base-

Emitter Shunt Resistors
High DC Current Gain : hFE=1000 @ VCE= -4V, IC= -3A (Min.)
Collector-Emitter Sustaining Voltage
Low Collector-Emitter Saturation Voltage
Industrial Use 1 TO-220
Complementary to TIP100/101/102
1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Darlington Transistor

Absolute Maximum Ratings TC=25C unless otherwise noted Equivalent Circuit
Symbol Parameter Value Units C
VCBO Collector-Base Voltage : TIP105 - 60 V
: TIP106 - 80 V
: TIP107 - 100 V B
VCEO Collector-Emitter Voltage : TIP105 - 60 V
: TIP106 - 80 V
: TIP107 - 100 V
VEBO Emitter-Base Voltage -5 V
R1 R2
IC Collector Current (DC) -8 A
ICP Collector Current (Pulse) - 15 A R 1 10 k E
R 2 0.6 k
IB Base Current (DC) -1 A
PC Collector Dissipation (Ta=25C) 2 W
Collector Dissipation (TC=25C) 80 W
TJ Junction Temperature 150 C
TSTG Storage Temperature - 65 ~ 150 C

Electrical Characteristics TC=25C unless otherwise noted

Symbol Parameter Test Condition Min. Max. Units
VCEO(sus) Collector-Emitter Sustaining Voltage
: TIP105 IC = -30mA, IB = 0 -60 V
: TIP106 -80 V
: TIP107 -100 V
ICEO Collector Cut-off Current
: TIP105 VCE = -30V, IB = 0 -50 A
: TIP106 VCE = -40V, IB = 0 -50 A
: TIP107 VCE = -50V, IB = 0 -50 A
ICBO Collector Cut-off Current
: TIP105 VCB = -60V, IE = 0 -50 A
: TIP106 VCB = -80V, IE = 0 -50 A
: TIP107 VCB = -100V, IE = 0 -50 A
IEBO Emitter Cut-off Current VBE= -5V, IC = 0 -2 mA
hFE DC Current Gain VCE = -4V, IC = -3A 1000 20000
VCE = -4V, IC = -8A 200
VCE(sat) Collector-Emitter Saturation Voltage IC = -3A, IB = -6mA -2 V
IC = -8A, IB = -80mA -2.5 V
VBE(on) Base-Emitter ON Voltage VCE = -4V, IC = -8A -2.8 V
Cob Output Capacitance VCB = -10V, IE = 0, f = 0.1MHz 300 pF

2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 TIP105/106/107
Typical Characteristics

-5
10k
IB = -1000 uA
IB = -800 uA VCE = -4V
IB = -900 uA IB = -700 uA
IC[A], COLLECTOR CURRENT

-4

IB = -600 uA

hFE, DC CURRENT GAIN

-3
IB = -500 uA

IB = -400 uA 1k

-2

IB = -300 uA

-1

IB = -200 uA

-0
100
-0 -1 -2 -3 -4 -5
-0.1 -1 -10

VCE[V], COLLECTOR-EMITTER VOLTAGE Ic[A], COLLECTOR CURRENT

Figure 1. Static Characteristic Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

-100k 10k

IC = 500 IB
f = 0.1 MHz
IE = 0
1k
Cob[pF], CAPACITANCE

-10k

100

V BE(sat)
-1k

V CE(sat) 10

-100 1
-0.1 -1 -10 -100 -0.1 -1 -10 -100

IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance

Base-Emitter Saturation Voltage

-100 100

90

1ms
IC[mA], COLLECTOR CURRENT

80
PC[W], POWER DISSIPATION
10

-10
0

70
DC
s

60
5m

-1 50
s

40

30
-0.1
20
TIP105
TIP106 10
TIP107
-0.01 0
-0.1 -1 -10 -100 0 25 50 75 100 125 150 175

VCE[V], COLLECTOR-EMITTER VOLTAGE o

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area Figure 6. Power Derating

2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 TIP105/106/107
Package Demensions

TO-220

1.30 0.10 9.90 0.20 4.50 0.20

(8.70)

2.80 0.10
(1.70)

+0.10
3.60 0.10 1.30 0.05

18.95MAX.
(3.70)

15.90 0.20
9.20 0.20

(1.46)

(3.00)
(45
)
(1.00)
13.08 0.20

10.08 0.30

1.27 0.10 1.52 0.10

0.80 0.10 +0.10

0.50 0.05 2.40 0.20
2.54TYP 2.54TYP
[2.54 0.20] [2.54 0.20]

10.00 0.20

Dimensions in Millimeters

2001 Fairchild Semiconductor Corporation Rev. A1, June 2001

 TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx FAST OPTOPLANAR STAR*POWER
Bottomless FASTr PACMAN Stealth
CoolFET FRFET POP SuperSOT-3
CROSSVOLT GlobalOptoisolator Power247 SuperSOT-6
DenseTrench GTO PowerTrench SuperSOT-8
DOME HiSeC QFET SyncFET
EcoSPARK ISOPLANAR QS TruTranslation
E2CMOS LittleFET QT Optoelectronics TinyLogic
EnSigna MicroFET Quiet Series UHC
FACT MICROWIRE SLIENT SWITCHER UltraFET
FACT Quiet Series OPTOLOGIC SMART START VCX
STAR*POWER is used under license

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

2001 Fairchild Semiconductor Corporation Rev. H3