TK13A65U

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS)

TK13A65U
Switching Regulator Applications
Unit: mm
2.7 0.2
3.2 0.2 10 0.3
A
Low drain-source ON resistance: RDS (ON) = 0.32 (typ.)

3.9 3.0
High forward transfer admittance: Yfs = 8.0 S (typ.)

15.0 0.3
Low leakage current: IDSS = 100 A (max) (VDS = 650 V)
Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
1.14 0.15

Absolute Maximum Ratings (Ta = 25C)

2.8 MAX.

13 0.5
0.69 0.15
Characteristics Symbol Rating Unit 0.2 M A

2.54 2.54
Drain-source voltage VDSS 650 V

2.6 0.1
1 2 3
Gate-source voltage VGSS 30 V

0.64 0.15

4.5 0.2
DC (Note 1) ID 13
Drain current Pulse (t = 1 ms) A
IDP 26
(Note 1)
1: Gate
Drain power dissipation (Tc = 25C) PD 40 W 2: Drain
3: Source
Single pulse avalanche energy
EAS 86 mJ
(Note 2) JEDEC
Avalanche current IAR 13 A JEITA SC-67
Repetitive avalanche energy (Note 3) EAR 4.0 mJ
TOSHIBA 2-10U1B
Channel temperature Tch 150 C
Weight : 1.7 g (typ.)
Storage temperature range Tstg 55 to 150 C

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).

Thermal Characteristics Internal Connection

Characteristics Symbol Max Unit

2
Thermal resistance, channel to case Rth (ch-c) 3.125 C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 C/W

Note 1: Please use devices on conditions that the channel temperature is below 150C.

Note 2: VDD = 90 V, Tch = 25 C (initial), L = 0.9 mH, RG = 25 , IAR = 13 A 1

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

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 TK13A65U
Electrical Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = 30 V, VDS = 0 V 1 A

Drain cut-off current IDSS VDS = 650 V, VGS = 0 V 100 A
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 650 V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 3.0 5.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 6.5 A 0.32 0.38
Forward transfer admittance Yfs VDS = 10 V, ID = 6.5 A 2.0 8.0 S
Input capacitance Ciss 950
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz 47 pF

Output capacitance Coss 2300

10 V ID = 6.5 A VOUT
Rise time tr VGS 30
0V
Turn-ON time ton RL = 65
50
Switching time 31 ns
Fall time tf 8
VDD 200 V

Turn-OFF time toff Duty 1%, tw = 10 s 80

Total gate charge Qg 17

Gate-source charge Qgs VDD 400 V, VGS = 10 V, ID = 13 A 10 nC

Gate-drain charge Qgd 7

Source-Drain Ratings and Characteristics (Ta = 25C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1) IDR 13 A

Pulse drain reverse current (Note 1) IDRP 26 A

Forward voltage (diode) VDSF IDR = 13 A, VGS = 0 V 1.7 V
Reverse recovery time trr IDR = 13 A, VGS = 0 V, 430 ns
Reverse recovery charge Qrr dIDR/dt = 100 A/s 7.0 C

Marking
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

Part No. environmental matters such as the RoHS compatibility of Product.
(or abbreviation code) The RoHS is Directive 2002/95/EC of the European Parliament and
K13A65U
Lot No. of the Council of 27 January 2003 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
Note 4

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 TK13A65U

ID VDS ID VDS
15 25
Common source 10 8 7.5
10 8
Tc = 25C
Pulse test Common source
12 7.3 20
Tc = 25C
(A)

(A)
Pulse test
7.5
ID

ID
9 7 15
7.3
Drain current

Drain current
6.8
6 10 7

6.5

6.5
3 5
VGS = 6 V
VGS = 6 V

0 0
0 2 4 6 8 10 0 10 20 30 40 50

Drainsource voltage VDS (V) Drainsource voltage VDS (V)

ID VGS VDS VGS

20 10
Common source Common source
VDS = 10 V Tc = 25C
VDS (V)

Pulse test Pulse test

16 8
(A)
ID

12 6
Drainsource voltage
Drain current

ID = 13 A

8 4
100

25 Tc = 55C 6.5
4 2
3.3

0 0
0 2 4 6 8 10 0 4 8 12 16 20

Gatesource voltage VGS (V) Gatesource voltage VGS (V)

Yfs ID RDS (ON) ID

100 10
Common source Common source
VDS = 10 V Tc = 25C
Pulse test
Drainsource ON-resistance
Forward transfer admittance

Pulse test

Tc = 55C
10
RDS (ON) ()
Yfs (S)

25 1
100

1
VGS = 10 V

0.1 0.1
0.1 1 10 100 0.1 1 10 100

Drain current ID (A) Drain current ID (A)

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 TK13A65U

RDS (ON) Tc IDR VDS

1.5 100
Common source Common source
VGS = 10 V Tc = 25C

(A)
Pulse test
Drainsource ON-resistance

1.2 Pulse test

IDR
10
RDS (ON) ()

Drain reverse current

0.9
6.5

13
0.6
10
1
ID = 3.3 A

0.3 5

3
1 VGS = 0 V
0 0.1
80 40 0 40 80 120 160 0 0.3 0.6 0.9 1.2 1.5

Case temperature Tc (C) Drainsource voltage VDS (V)

C VDS Vth Tc
10000 5
Vth (V)

Ciss 4
(pF)

1000
Gate threshold voltage

3
C

Coss
Capacitance

100

10 Common source
Common source 1 VDS = 10 V
VGS = 0 V Crss ID = 1 mA
f = 1 MHz Pulse test
Tc = 25C
1 0
0.1 1 10 100 80 40 0 40 80 120 160 200

Drainsource voltage VDS (V) Case temperature Tc (C)

Dynamic input/output
PD Tc characteristics
50 500 20
Common source
ID = 13 A
(W)

VDS (V)

Tc = 25C
(V)

VDS Pulse test

40 400 16
PD

VGS

200V
Drain power dissipation

30 300 VDD = 100V 12

Drainsource voltage

Gatesource voltage

400V

20 200 8
VGS

10 100 4

0 0 0
0 40 80 120 160 200 0 6 12 18 24 30

Case temperature Tc (C) Total gate charge Qg (nC)

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 TK13A65U

rth tw
10

Normalized transient thermal impedance

1
Duty=0.5
rth (t)/Rth (ch-c)

0.2
0.1
0.1
0.05
0.02
PDM

0.01 t
0.01
Single pulse T

Duty = t/T
Rth (ch-c) = 3.125C/W
0.001
10 100 1m 10m 100m 1 10

Pulse width tw (s)

Safe operating area EAS Tch

100 100

ID max (Pulse) *
EAS (mJ)

ID max (Continuous) 100 s * 80

10
(A)

1 ms * 60
ID

Avalanche energy
Drain current

1 DC operation
Tc = 25C 40

20
0.1

0
25 50 75 100 125 150
0.01 * Single nonrepetitive
pulse Tc = 25C Channel temperature (initial) Tch (C)
Curves must be derated
linearly with increase in
temperature.
VDSS max
0.001
0.1 1 10 100 1000

Drainsource voltage VDS (V) BVDSS

15 V
15 V IAR

VDD VDS

TEST CIRCUIT WAVEFORM

RG = 25 1 B VDSS
AS = L I2
VDD = 90 V, L = 0.9 mH 2 B
VDSS VDD

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 TK13A65U
RESTRICTIONS ON PRODUCT USE
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in this document, and related hardware, software and systems (collectively Product) without notice.
This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
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Though TOSHIBA works continually to improve Products quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must
also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document,
the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the TOSHIBA
Semiconductor Reliability Handbook and (b) the instructions for the application that Product will be used with or for. Customers are
solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the
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information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other
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ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
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LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
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Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product
or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations.
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.

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