(a) Zener Diode Construction:

Zener diodes are a modified form of PN silicon diode used extensively for voltage
regulation. The P type and N type silicon used is doped more heavily than a
standard PN diode. As shown in Fig. 1.

Figure 1: Construction of Zener Diode

Due to heavily doped P-region and N-region the Zener diode has a thin junction
layer so reverse breakdown voltage that can be much lower than in a
conventional diode.
The actual breakdown voltage is controlled during manufacture by adjusting the
amount of doping used.
Breakdown voltages can be selected in this way to occur at precise preset values
anywhere between about 3V and 300V.
Zener diodes can also withstand higher reverse current flow than comparable PN
diodes, and are available with various power ratings, typically from 500mW to
50W.

(b) Operation:
 When Zener diodes are biased in their forward direction, they behave in the
same way as a normal silicon diode.
When they are reverse biased they exhibit a very high resistance, and
consequently a low value of reverse leakage current.
However when a reverse bias reaches the value of the diodes reverse
breakdown voltage (the Zener voltage) a rapid drop in resistance and increase in
current occurs.
To prevent this current increasing to a value that would exceed the diodes
power rating and destroy it, the Zener diode uses a resistor connected in series
with the diode to limit the reverse current to a safe value.
Operating the diode in this condition means that, due to the very steep slope of
the diodes reverse characteristic, any slight change in voltage across the diode
will cause a large change in current through the diode. This effect is very useful
in voltage regulator circuits.
 Figure 3: Zener diode V-I characteristics
(d) Break down Characteristics of Zener Diode: