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SEMICONDUCTOR TECHNICAL DATA by MPF910/D

   

NChannel Enhancement
3 DRAIN

2
GATE

1 SOURCE

1
MAXIMUM RATINGS 2
3
Rating Symbol Value Unit
Drain Source Voltage VDS 60 Vdc CASE 2905, STYLE 22
TO92 (TO226AE)
GateSource Voltage
Continuous VGS 20 Vdc
Nonrepetitive (tp 50 s) VGSM 40 Vpk
Drain Current Continuous(1) ID 0.5 Adc
Pulsed(2) IDM 1.0
Total Device Dissipation @ TA = 25C PD 1.0 Watts
Derate above 25C MPF910 8.0 mW/C
Total Device Dissipation @ TC = 25C PD 6.25 Watts
Derate above 25C MFE910 50 mW/C
Operating and Storage Junction TJ, Tstg 65 to +150 C
Temperature Range

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS
ZeroGateVoltage Drain Current IDSS 0.1 10 Adc
(VDS = 40 V, VGS = 0)
Gate Reverse Current IGSS 0.01 10 nAdc
(VGS = 10 V, VDS = 0)
DrainSource Breakdown Voltage V(BR)DSS 60 90 Vdc
(VGS = 0, ID = 100 A)

ON CHARACTERISTICS
Gate Threshold Voltage VGS(th) 0.3 1.5 2.5 Vdc
(VDS = VGS, ID = 1.0 mA)
DrainSource OnVoltage VDS(on) 2.5 Vdc
(VGS = 10 V, ID = 500 mA)
OnState Drain Current ID(on) 500 mA
(VDS = 25 V, VGS = 10 V)
Forward Transconductance gfs 100 mmhos
(VDS = 15 V, ID = 500 mA)

1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width v 300 s, Duty Cycle v
2.0%.

TMOS is a registered trademark of Motorola, Inc.

REV 1

Motorola SmallSignal Transistors, FETs and Diodes Device Data 1

Motorola, Inc. 1997
MPF910
RESISTIVE SWITCHING

+25 V
To Sampling Scope
23 50 Input
20 dB Vout
Pulse Generator Vin
50 Attenuator
40 pF

50
50 1.0 M

Figure 1. Switching Test Circuit

ton toff

90% 90%

Output Vout 10%

Inverted
90%
50% 50% 10 v
Pulse
Input Vin 10% Width

Figure 2. Switching Waveforms

2.0 2.0
V GS(th) , THRESHOLD VOLTAGE

VGS = 10 V
I D(on), DRAIN CURRENT (AMPS)

VDS = VGS
1.6 ID = 1.0 mA
1.6 9.0 V
8.0 V
1.2 1.2 7.0 V

6.0 V
0.8 0.8
5.0 V
0.4 0.4
4.0 V

0
50 0 50 100 150 (C) 0 1.0 2.0 3.0 4.0
TJ, JUNCTION TEMPERATURE VDS, DRAIN SOURCE VOLTAGE (VOLTS)

Figure 3. VGS(th) Normalized versus Temperature Figure 4. OnRegion Characteristics

2 Motorola SmallSignal Transistors, FETs and Diodes Device Data

 MPF910
2.0 100
VGS = 10 V

I D(on), DRAIN CURRENT (AMPS)

VGS = 10 V
1.6 9.0 V 80

C, CAPACITANCE (pF)
8.0 V
1.2 60
7.0 V
0.8 40
6.0 V
Ciss
0.4 5.0 V 20 Coss
4.0 V
Crss
0 10 20 30 40 0 10 20 30 40 50 60
VDS, DRAIN SOURCE VOLTAGE (VOLTS) VDS, DRAIN SOURCE VOLTAGE (VOLTS)

Figure 5. Output Characteristics Figure 6. Capacitance versus

DraintoSource Voltage

10
V DS , DRAINSOURCE VOLTAGE (VOLTS)

ID = 1.5 A
VGS = 10 V
5.0 1.0 A

0.5 A

1.0

0.5
0.4
0.3
0.2

0.1
50 30 10 10 30 50 70 90 110 130 150
TJ, JUNCTION TEMPERATURE
Figure 7. On Voltage versus Temperature

Motorola SmallSignal Transistors, FETs and Diodes Device Data 3

MPF910
PACKAGE DIMENSIONS

A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
B 3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
SEATING
DIMENSIONS D AND J APPLY BETWEEN L AND K
P PLANE
MIMIMUM. LEAD DIMENSION IS UNCONTROLLED
L IN P AND BEYOND DIMENSION K MINIMUM.
F
K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.44 5.21
B 0.290 0.310 7.37 7.87
C 0.125 0.165 3.18 4.19
X X D D 0.018 0.022 0.46 0.56
G F 0.016 0.019 0.41 0.48
H G 0.045 0.055 1.15 1.39
J H 0.095 0.105 2.42 2.66
J 0.018 0.024 0.46 0.61
V K 0.500 12.70
L 0.250 6.35
SECTION XX
1 2 3 N C N
P
0.080

0.105
0.100
2.04

2.66
2.54
R 0.135 3.43
N V 0.135 3.43

STYLE 22:
PIN 1. SOURCE
CASE 02905 2. GATE
3. DRAIN
(TO226AE)
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4 Motorola SmallSignal Transistors, FETs and Diodes Device Data

MPF910/D