ECE 305: Fall 2016

MOS Fundamentals
Professor Peter Bermel
Electrical and Computer Engineering
Purdue University, West Lafayette, IN USA
pbermel@purdue.edu

Pierret, Semiconductor Device Fundamentals (SDF)

pp. 525-530, 563-571
10/28/2016 Bermel ECE 305 F16 1
 MOS Fundamentals

1) MOSFET and MOS capacitors

2) E-bands and work functions
3) Band-bending in ideal MOS-Cs

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 MOSFETs

S G D

gate
electrode
source drain

SiO2
silicon
(Texas Instruments, ~ 2000)

gate oxide channel

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EOT ~ 1.1 nm ~ 20 nm
Basic Configuration of a MOSFET

Gate
Source Drain
n+
y
n+ n+

Substrate (p)

Bermel ECE 305 F16 4

Background

S G D

n+ n+

Strained MOSFET High-k/metal gate MOSFET

Sources:
IBM J. Res. Dev.
Google Images
Intel website

Bermel ECE 305 F16 5

 MOSFET (off)

VD
L
ID = 0
0 VG < VT

n+-Si n+-Si

p-Si

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 MOSFET (on)

VD
L
ID > 0
0 VG > VT

n+-Si n+-Si

p-Si

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 MOSFET and MOS C

n+-Si n+-Si

p-Si

MOS capacitor 8
 MOS capacitor

metal
SiO 2 VG or
t ox 1- 2 nm heavily doped
polysilicon

p-Si or n-Si

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 oxide scaling: reaching its limits

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how can we understand MOSFET performance?

What characterizes its performance?

How can we calculate it?
What is the closest analogue that weve
already seen?

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 MOS Fundamentals

1) MOSFET and MOS capacitors

2) E-bands and work functions
3) Band-bending in ideal MOS-Cs

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 What we need to do: draw e-band diagram
E0
ci
EC cS
FM

EFM EC
Ei
EG = 1.12 eV
Ei
EF
metal EG 8.9 eV
Si EV

SiO 2
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 Recall the MS junction

E0

F M = 4.08 eV c S = 4.05 eV
FS
EC
EFM
Ei

aluminum EFP
EV

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 built-in potential

E0

F M = 4.08 eV c S = 4.05 eV
FS
EC
EFM
Ei

aluminum EFS
EV
potential = Vbi -F MS
Vbi = = -fms
q

qVbi = ( EFM - EFS ) = ( F S - F M ) = - ( F M - F S ) = -F MS 15

 example:

Aluminum metal and p-type Si

N A = 1016 cm -3 F M = 4.08 eV

p0 = NV e( EV - EFS ) / kB T cm -3 F S = c S + EG - ( EFS - EV ) q

NV
EFS - EV = kBT ln F S = 4.97 eV
N A

f ms =
( F M - FS )
= - 0.9 V
q

EFS - EV Vbi = -f ms = + 0.9 V

= 0.2
q Bermel ECE 305 F16 16
 the band diagram

EC
qVbi
Ei
EF
EF
EV

fM metal

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 MOS e-band diagram
E0
ci
EC cS
FM

EFM EC
Ei
EG = 1.12 eV
Ei
EF
metal EG 8.9 eV EV
Si

SiO 2
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 MOS e-band diagram

1) Built-in potential is exactly the same.

2) But part of the voltage drop occurs across the

semiconductor and part across the oxide.

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 MOS Fundamentals

1) MOSFET and MOS capacitors

2) E-bands and work functions
3) Band-bending in ideal MOS-Cs

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 Electrostatics of MOS Capacitor in Equilibrium

Vacuum level
qci
Gate qcs
qFm
EC
EF
Substrate (p)
x
EV

Schottky barrier with an

interposed dielectric
Metal Insulator P-Semiconductor
Bermel ECE 305 F16 21
 equilibrium e-band diagram

fS
DVox

V ( metal) = DVox + fS EC
DVS
Ei
EF
EV

Vbi = -fms metal f ( x ) = 0 in the bulk

V ( metal) = Vbi f ( x = 0 ) = fS surface potential

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 equilibrium e-band diagram

dE r ( x )
constant =
electric field dx e
EC

Ei
EF
EV

metal
V ( metal) = Vbi monotonically
decreasing electric
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field
 equilibrium e-band diagram

Dox = DS
DVOX
K ox e 0E ox = K S e 0E S ( )
E S = E 0+
KS EC
E ox = ES
K OX DVS
E ox
E ox 3E S Ei
EF
EV
Vbi
metal

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 potential vs. position

f ( x)
fS > 0
V ( metal) = Vbi = -fms = DVox + DVS

f=0

-xox 0 x

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 electric field vs. position

E ( x)

E ox ES

f=0

-xox 0 x

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 space charge density vs. position

r ( x)

W
-xox 0 x

-qN A

depletion charge

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 conclusions
Introducing an oxide layer between a metal
and semiconductor creates a new type of
bandstructure
This enables a new type of device, known as
a metal-oxide-semiconductor field effect
transistor (MOSFET)
Next time, we will discuss how to calculate
additional properties such as capacitance,
current-voltage relation, etc.

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