The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Group Bipolar Memory Data Manual SEPTEMBER 1977 Texas INSTRUMENTS INCORPORATED ®SCHOTTKYt ‘SERIES 548/745 PROMS PROGRAMMABLE READ-ONLY MEMORIES © Choice of Three-State or Open Collector ‘© Titanium-Tungsten (TE-W) Fuse Links for Fast Outputs Low-Voltage Reliable Programming ‘© PNP Inputs for Reduced Loading on System ‘© Full Decoding and Chip Select Simplify Buffers/Drivers System Design ‘+ Applications Indu + PowerDown Versions ('S460, ‘S451) Can Micsoprogramming/ Firmware Loaders Regus Gystse) Power FloGuianients Code Converters/Cheracter Generators eas aay Translators/Emulators Ae ‘© Fast Chip Select to Simplify System Decode ‘Address Mapping/Laok-Up Tables “TYPE NUMBER (PACKAGES! = curr sere 125% | cto 70' | (ORGANIZATION) | CONFIGURATION pe cren sneasasnig | Sree ara Fee ; GREAT) | SNTERTONT Z| 1024W2 88 | epenclacor bie ean a _effeneeseray) | sxrasaraianr 3192 bre ce te - Sasser NTS sanwa80. es = TTswraseroainn yy 192 ‘hrestte ra = aaa SNTASI7ORUNIYY 1024238 css 2 SN745470UN1 “an6 tonne | &) Gay area suresarram | s0new x4 ween cole J ij “plsear7esa76 3S OUTPUTS shGAS/T6G478 25 OUTPUTS SNEASI74S2700.25 OUTPUTS SNSAE/7ESA6035 OUTPUTS Siocervese77oc OUTeUTS —— susasrage7e 0 OUTPUTS SNSAS/74S3708 0-€ OUTPUTS SNS4S/74S451 OC OUTPUTS “ome rT ‘weirs a (1024 WORDSBY 481731 024 WORDS BY 8811S) (1026 NORDS BY 8 8175) 731 “98,3477 ‘se78, 3470 ‘$7708, "33708 sf TU Re Of x wee pas wae Eee: ead Pen me seal eeeer=ce| ae MAXIMUM OE [wre [ avoness | eee wo und ESS “ anges] 1S. a som Gow re aH [exes Teo —_. ti description “These morolithie TTL programmable read-only martes (PROM's) features titanium-tungsten (TW) fuse Hinks with tach line designed to program with @ 100 microsacond pulse, They afer considerable flexibility for unarading existing Gesigns of improving new cesigns 2s they feature full Schottky clamping for improved performance, low-cutent MOS.compatibie pnp inputs, and choice of burdriving three state or open-collector outputs. Additionally the ‘S450 "3051 feotures dua! enableldisable inputs which power-down or powerup the PROM providing additional cost cffectiveness in powetsensitive applications. The power down and power-up functions are sequenced to occur with the outputs at a high impedance. Dota can be electrically programmed, as desired, at any bit location in accordance with the programming procede specified, These new PROM's are supplied with a high logicevet output condition stored at each bit ication, The Progamming procedure open-ciccuits T+W metal Finks, which reverses the stored logic level at selected locations. Tht pesion coat ‘mugen nit Wehr pss the Stepan! TEXAS INSTRUMENTS ‘Sorget anit tens wy Te 7” Iie ae faarens ove erat adeansiee Matern se "Preah Scop osc pt oer once sos ars nae vans meme SNSSDTS venue noes.SERIES 54S/74S PROGRAMMABLE READ-ONLY MEMORIES —_—_—_—_——_—————————— ‘cedure is irreversible, Once altered, the output for thet bit location is permanently programmed. Outputs never dng been altered may later be programmed to supply the opposite output level. Operation of the unit within the ‘Semended operating conditions will not alter the memory content. Active level(s) at the chip selects] or memory bie [E) input) activates al of the outputs, and the ‘S450. “S451 memory enable wil initiate & power-up sequence vmoctive lovel at any ehipselect oF memory enable input causes all outputs to be off, and the memory enable will inte 2 ponerdown sequence. The three-state output offers the convenience of an opencollector output with the rot crotem-pole output it can be busconnected to other similar outputs yet it retains the fost rise time crisis of the TTL totempole output. The open collector output offers the capability of direct intertace with a 1a line having a possive pall up. te maximum ratings over operating free-air temperature range (unless otherwise noted) poly voltage Ww put voltage 5 5 ssv ‘tf-state output voltage : : 55V Iperating free-air temperature range: SNES’ Circuits “s6'C to 125°C SN7AS' Circuits oc 0 70°C “68°C to 150°C ‘torage temperature range mended conditions for programming ‘wees lune - = uw eeaha Gal, cata ee aor ae ee pe ee oe Hah level Vin 24 tae Se — i ane eae seven Ys = oes ae | lasaweeee ose 7 Sau ameter ac TTRTG ylince ate prow arming it anges ee ouput of te bt tol Tome twa ‘y-step programming procedure ‘Apply steady-state supply voltage and address the word to be programmed. Enable the PROM and verity thatthe bit location neods to be programmed. Wf not, proceed to the next bit Fea eae eones programming, increase Vcc by 1 volt [minimum current eapabiity should be 200 mA) and Gisable the outputs by applying 10 volts to chip-select inputs. Minimum chip-select input current capabilities shouts be 5 mA. 1 Oe eee a ation is programmed ata time. Connect each output net being programmed to 2 0 19 0S vott rane holy the Voge) voltage pulse specified in the table to the output to Be prograrnmed. Minimurn current CGoubilty. of the programming output supply (during programming) should be 200 mA. See programming ‘equence of Figure 1 5. After the X pulse source from the remgining ovtouts, completed, disconnect the output that was programmed. Then, cemove the 0 to 05 volt Texas INSTRUMENTSSERIES 548/748. PROGRAMMABLE READ-ONLY MEMORIES EEE aS & _Thechipsetet inputs may be taken to 2 low logic lve to permit prograrn verification}, 7. One microsecond stter the chip select Inputs) reech low logic tere! Veg should be decreased 1 V at which verification canbe aeampyished by measuring VOL et the programe stat 8 Ata Y pulse duty cyte of 35% or less repeat steps 1 through 7 foreach cutout where i dese 10 programa wie ee wf ae news v0 vee LS Slee peoeysmramtte +t ene [wi wom MA [MaN_nOM WA in WOM Ba [wn Wow ta] weulss 6 asi ss@ ae sss] a5 saa], | fevus| 586 7s] 686 lames ss [ars san] Tee =F = a I we 2 2 2 16 va a a A I [swe] 0 mT eta 710 mata ma] 9] DESIGN GOAL tes peactie tamieomentsie ome TEXAS INSTRUMENTS Inaruments remves the igh 10 change et sogv exnce 6 Tae Someta wine smaceTTL SERIES 54/74, 54S/74S MEMORIES READ-ONLY MEMORIES JLLETIN AO, 04.6 7512259, MAY 1975 FEIT SE WORDS EV BOTT © Mask-Programmed Memories That Can Reptace PROMs besa + Full On-Chip Decoding and Fast Chip Salectis) Simplify System 001 [J pre vee Decoding 02 2 1s 5 +All Schottky Clamped ROMs Offer 08 3 AoE "choice of 2 State or OpenCollector Outputs boa 4 2 a0 TRIN Inputs for Radueed Loading on Systm Butfers/Drivers 905 2 ad + Applications incl ves 6 108 —Microprogramming Firmware/Firmware Loaders p07 7 10 ADA —Code Converters/Character Generators. eae reel ~TranlstorsfEmulators “Adress Mapping/Look Up Tables Sonos v4) see wen waceaaess | wwre or | wivaike — vm conse imes Fennec veewe | anmune [onsomesronfonmacceer|soores| 00 xf [J be ve Ee noe a 8 AD ‘teen areca n) [opencoie mam | am iii Ls ADE 31 4 32 ‘saaraw freee fomvconce| gait [am | wom | s00 4 me save K RISO A [OpenCorecor|— 208 we tan] es eno ‘ipasa7OW) (SNTESS7OU. WI] FState {512 W 6B) Same 1 Oz iEeraravrisoi0-w Opclacer| 20 — we] 18% 10 90 Gass) _[sn7asa7v0, wi] 3Stare (266 W x82) fe aa GND 8° 9 DO4 iption 2001s frawonos 8 4515 Lashia "S270, '5370 Tine mene TL ewonaranamed adn menor (OM) Beeasi arr lee ing tte lng ger sete 200 xf [J pve vee weston Ragen sa Ste ema eae Te ape 2 15 ADH peor ADE 3 14201 The highcomplexity 2048-bit ROMs can be used t0 significantly improve system ADD 4c] 3S bit density for fined memory ai all are offered in compact 16-cr 20pin dusl-iline gy 4 esau Jkages having pinto spacings of 0,300-ineh packages having pin-row spacings of 0.300 aeate ea The Schottky clamped versions offer considerable Hexibility for upgrading existing ADC 10 003 esign or improving new designs 2 they fosture improved performance; plus. MY Gu ge euiers otter low current MOS-compatible pnp inputs, choice of bus drwving thee-state or fopen-collector outputs, and improved chip select access times. 2068 B15 (256 WORDS BY 8 TS! 271 S27) Ube ve Date from a sequenced deck of data cards punched zecording to the specified format are permanently programmed by the Factory into the monolith structure for all bit locations, Upon receipt of the order, Texas Instruments. will assign a special identitying number for each paitern programmed according to the order, AD® 7 19 ADH ‘The completed devices will be marked sith the appropriate TI soecial device ADC 3 18 abc ssumber Is important thatthe customer specify not only the autput levels desired — 400 4 17 ape at all bit locations, but alzo the other information requested under ordein . instructions a “ 7 ape se ies a2 01 6 15 5t The threestate outputs offer the convenience of an opencolector output with the Bo 9 9 eats spned of a torem-oole output: they can be bus-conneeted to other sivlar outputs yet they retain the fast cse time characteristic of the TTL totem-pole output. The 902. 8 13 007 Oper-collector outputs offer the capability of direct interface with a data line O04 3 "2 006 having 2 passive pullup, ND 10 41005 Word.addressing is accomplished in staight positive iogie binary and the memory may be read when all § input ae low. A high at ay S input causes the outputs tobe off Pin emipnmena ora of thee marosat Texas INSTRUMENTS iitooen SCP peer er a me