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Figures A, B, and C, respectively. All MOSFETs are enhancement mode devices with threshold
voltages Vtn = 0.7 V and Vtp = - 0.8 V. All devices operate in saturation with the following
transconductances and output resistances:
gm_n= gm1=gm2= 0.3 mA/V, gm_p= gm3=gm4= 0.5 mA/V, Ro_n= ro1 =ro2= 100 kOhm,
ro_p= ro3= ro4 =50 kOhm
The amplifiers operate on C_load =100 fF. The MOSFET capacitances are as follows: Cgs_n=
Cgs1= Cgs2 = 20 fF, Cgs_p =Cgs3=Cgs4 = 120 fF,
Cgd_n= Cgd1=Cgd2= 5 fF, Cgd_p =Cgd3=Cgd4= 30 fF.
For amplifiers A and B: consider a single pole response formed by output resistance Rout and
combination of C_load, Cgd_n, Cgd_p.
For amplifier C consider a two pole response: one pole is formed by Rout and C_load, Cgd2,
Cgd3. Another pole is formed by combination of Cgs2 and Cgd1 and the resistance seen by this
capacitance. The latter is formed by ron1 and resistance Rin2 looking into the source terminal of
M2.
a) Present calculations of the time constants forming the poles for amplifiers A, B, and C.
b) Present the amplitude and phase responses of the voltage gain Vout/Vin for amplifiers A, B, C
Note that inverting amplifiers have a 180 deg phase shift at low frequencies.
Estimate the range of output voltage for circuits A, B, and C. All MOSFETs have to operate in
the
saturation
region.
a. Draw a simple diagram and show all the necessary connections between the processor and the
EPROM memory device.