Total 20 Questions

Course: B.Tech (Electronics & Communication Engineering)

Subject: Vlsi Technology
Paper Code: EEC-604
Semester: VI

Questions from Unit I

Q.1. Explain CZ technique of crystal growth.
Q.2. A silicon ingot with 0.5 x 1016 boron atoms/cm3 is to be grown by CZ method. What should be
the concentration of boron in the melt to obtain the required doping concentration? The segregation
coefficient of boron is 0.8.
Q.3. Discuss Molecular beam epitaxy process.
Q.4.(a) Explain vapor phase epitaxy.
(b) What are the sources of silicon in vapor phase epitaxy?
Q.5. Discuss different steps in preparing wafers from raw silicon.
Q.6. What are different defects that occur in silicon?

Questions from Unit II

Q.1. Derive the expression of oxide thickness using Deal-Grove model.
Q.2. Show that to grow an oxide layer of SiO2 layer of thickness x, a thickness of 0.44x of silicon is
consumed.
Q.3. What are PR materials?Describe all types of PR.What are the properties of good PR?
Q.4. Compare X-ray and ion-beam lithography process.
Q.5. Explain the working of CVD reactors in detail.
Q.6. Give the process of silicon vapor deposition.

Questions from Unit III

Q.1. If the measured phosphorous profile is represented by a Gaussian function with a diffusivity
D=2.3 x 10-13 cm2/s, the measured surface concentration is 1 x1018 atoms/cm3 and the measured
junction depth is 1 m at a substrate concentration of 1 x 1015 atoms/cm3.Calculate diffusion time and
the total dopant in the diffused layer.
Q.2.What is Ficks law? Explain its importance in theory of diffusion.
Q.3.What are the process variables that affect the diffusion process? Explain.
Q.4. Compare ion implantation process with diffusion.
Q.5.What do you mean by annealing and why it is required in IC fabrication process?
Q.6. Explain solid source diffusion of Boron.
Questions from Unit IV
Q.1. Describe step converge with CVD processes. Explain how gas pressure and surface temperature
may influence these different profiles.
Q.2. Explain the metallization and also describe the problems associated with the process. Explain dc
sputtering method of metallization.
Q.3. Explain proximity printing and projection printing and compare these two.
Q.4. What is etching? Explain its different types and write advantages and disadvantages of each.
Q.5.List all process steps of pattern transfer with diagram.
Q.6. Explain the reactive ION Beam Etching with suitable diagram.

Questions from Unit V

Q.1. Discuss all the steps involved in fabrication of CMOS.

Q.2. Why cleaning of silicon wafers is necessary before any processing steps? What are clean room
standards.

Q.3.Why (100) orientation is preferred over (111) orientation for starting material in NMOS/CMOS
ICS fabrication? Explain the application of SiO2 layer in IC fabrication.

Q.4. A silicon wafer with p type doping of 1015 is heated at 10000C for 1 hour in a day with oxygen.
How much oxide has been grown?
Q.5.Explain the following terms:
(a) Dry Oxidtion
(b)Wet Oxidation
(c)Plasma Oxidation
Q.6.Explain the difference between Dry and Wet Etching.