ZTX752 PNP SILICON PLANAR ZTX752

ZTX753 MEDIUM POWER TRANSISTORS ZTX753

ISSUE 2 JULY 94
ELECTRICAL CHARACTERISTICS (at Tamb = 25C). FEATURES
ZTX752 ZTX753 * 100 Volt VCEO
PARAMETER SYMBOL UNIT CONDITIONS. * 2 Amp continuous current
MIN. TYP. MAX. MIN. TYP. MAX. * Low saturation voltage
* Ptot=1 Watt
Transition fT 100 140 100 140 MHz IC=-100mA, VCE=-5V C
B
Frequency f=100MHz E

Switching Times ton 40 40 ns IC=-500mA, VCC=-10V E-Line

IB1=IB2=-50mA
toff 600 600 ns TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
Output Cobo 30 30 pF VCB=10V f=1MHz PARAMETER SYMBOL ZTX752 ZTX753 UNIT
Capacitance
Collector-Base Voltage VCBO -100 -120 V
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
Collector-Emitter Voltage VCEO -80 -100 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -6 A
Continuous Collector Current IC -2 A
THERMAL CHARACTERISTICS
Power Dissipation at Tamb=25C Ptot 1 W
PARAMETER SYMBOL MAX. UNIT derate above 25C 5.7 mW/C
Operating and Storage Temperature Range Tj:Tstg -55 to +200 C
Thermal Resistance:Junction to Ambient1 Rth(j-amb)1 175 C/W
Junction to Ambient2 Rth(j-amb)2 116 C/W ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
Junction to Case Rth(j-case) 70 C/W ZTX752 ZTX753
PARAMETER SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS.
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
Collector-Base V(BR)CBO -100 -120 V IC=-100A
Breakdown
Voltage
2.5 200 Collector-Emitter V(BR)CEO -80 -100 V IC=-10mA*
Breakdown
Max Power Dissi ation - (Watts)

Thermal Resistance (C/W)

D=1 (D.C.)

2.0 t1 D=t1/tP Voltage

C
as Emitter-Base V(BR)EBO -5 -5 V IE=-100A
e tP Breakdown
1.5 te
m
pe 100 D=0.5 Voltage
ra
tu Collector Cut-Off ICBO -0.1 VCB=-80V
1.0 Am
bie re A
nt t
em Current -0.1 A VCB=-100V
per D=0.2
0.5 at u
re D=0.1
-10 A VCB=-80V,Tamb=100C
Single Pulse -10 A VCB=-100V,Tamb=100C
0 0
-40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100
Emitter Cut-Off IEBO -0.1 -0.1 A VEB=-4V
T -Temperature (C) Pulse Width (seconds)
Current
Derating curve Maximum transient thermal impedance Collector-Emitter VCE(sat) -0.17 -0.3 -0.17 -0.3 V IC=-1A, IB=-100mA*
Saturation Voltage -0.30 -0.5 -0.30 -0.5 V IC=-2A, IB=-200mA*
Base-Emitter VBE(sat) -0.9 -1.25 -0.9 -1.25 V IC=-1A, IB=-100mA*
Saturation Voltage
Base-Emitter VBE(on) -0.8 -1 -0.8 -1 V IC=-1A, VCE=-2V*
Turn-On Voltage

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 ZTX752 PNP SILICON PLANAR ZTX752
ZTX753 MEDIUM POWER TRANSISTORS ZTX753
ISSUE 2 JULY 94
ELECTRICAL CHARACTERISTICS (at Tamb = 25C). FEATURES
ZTX752 ZTX753 * 100 Volt VCEO
PARAMETER SYMBOL UNIT CONDITIONS. * 2 Amp continuous current
MIN. TYP. MAX. MIN. TYP. MAX. * Low saturation voltage
* Ptot=1 Watt
Transition fT 100 140 100 140 MHz IC=-100mA, VCE=-5V C
B
Frequency f=100MHz E

Switching Times ton 40 40 ns IC=-500mA, VCC=-10V E-Line

IB1=IB2=-50mA
toff 600 600 ns TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
Output Cobo 30 30 pF VCB=10V f=1MHz PARAMETER SYMBOL ZTX752 ZTX753 UNIT
Capacitance
Collector-Base Voltage VCBO -100 -120 V
*Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%
Collector-Emitter Voltage VCEO -80 -100 V
Emitter-Base Voltage VEBO -5 V
Peak Pulse Current ICM -6 A
Continuous Collector Current IC -2 A
THERMAL CHARACTERISTICS
Power Dissipation at Tamb=25C Ptot 1 W
PARAMETER SYMBOL MAX. UNIT derate above 25C 5.7 mW/C
Operating and Storage Temperature Range Tj:Tstg -55 to +200 C
Thermal Resistance:Junction to Ambient1 Rth(j-amb)1 175 C/W
Junction to Ambient2 Rth(j-amb)2 116 C/W ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated).
Junction to Case Rth(j-case) 70 C/W ZTX752 ZTX753
PARAMETER SYMBOL MIN. TYP. MAX. MIN. TYP. MAX. UNIT CONDITIONS.
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
Collector-Base V(BR)CBO -100 -120 V IC=-100A
Breakdown
Voltage
2.5 200 Collector-Emitter V(BR)CEO -80 -100 V IC=-10mA*
Breakdown
Max Power Dissi ation - (Watts)

Thermal Resistance (C/W)

D=1 (D.C.)

2.0 t1 D=t1/tP Voltage

C
as Emitter-Base V(BR)EBO -5 -5 V IE=-100A
e tP Breakdown
1.5 te
m
pe 100 D=0.5 Voltage
ra
tu Collector Cut-Off ICBO -0.1 VCB=-80V
1.0 Am
bie re A
nt t
em Current -0.1 A VCB=-100V
per D=0.2
0.5 at u
re D=0.1
-10 A VCB=-80V,Tamb=100C
Single Pulse -10 A VCB=-100V,Tamb=100C
0 0
-40 -20 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100
Emitter Cut-Off IEBO -0.1 -0.1 A VEB=-4V
T -Temperature (C) Pulse Width (seconds)
Current
Derating curve Maximum transient thermal impedance Collector-Emitter VCE(sat) -0.17 -0.3 -0.17 -0.3 V IC=-1A, IB=-100mA*
Saturation Voltage -0.30 -0.5 -0.30 -0.5 V IC=-2A, IB=-200mA*
Base-Emitter VBE(sat) -0.9 -1.25 -0.9 -1.25 V IC=-1A, IB=-100mA*
Saturation Voltage
Base-Emitter VBE(on) -0.8 -1 -0.8 -1 V IC=-1A, VCE=-2V*
Turn-On Voltage

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 ZTX752
ZTX753
TYPICAL CHARACTERISTICS
0.6 td
tr IB1=IB2=IC/10
tf ts
0.5 ns ns
VCE(sat) - (Volts)

140 1400

Switching time
0.4 120 1200
IC/IB=10
100 1000 td
0.3
ts
80 800
tf
0.2 tr
60 600

40 400
0.1
20 200

0 0 0
0.0001 0.001 0.01 0.1 1 10 0.1 1

IC - Collector Current (Amps) IC - Collector Current (Amps)

VCE(sat) v IC Switching Speeds

1.4

225
VBE(sat) - (Volts)

1.2
hFE - Gain

175
VCE=2V 1.0
IC/IB=10
125
0.8
75
0.6
0
0.01 0.1 1 10 0.001 0.01 0.1 1 10
0.0001

IC - Collector Current (Amps) IC - Collector Current (Amps)

hFE v IC VBE(sat) v IC

Single Pulse Test at Tamb=25C

10
IC - Collector Current (Amps)

1.2

1.0 1
VBE - (Volts)

VCE=2V

0.8 D.C.
1s
100ms
10ms
0.6 0.1 1.0ms
100s

0.4 ZTX752
0.0001 0.001 0.01 0.1 1 10 ZTX753
0.01
0.1 1 10 100
IC - Collector Current (Amps) VCE - Collector Voltage (Volts)

VBE(on) v IC Safe Operating Area

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