F-D statistics in other solids

atT=0

Enerrgy

CHM322A/422 T.G.Gopakumar 1
 F-D statistics in band structure of semi-conductor

TheFermienergy/levelisinthemiddleofEc andEv foraconstantdensityofstate

CHM322A/422 T.G.Gopakumar 2
 Fermi energy/level in semiconductor

DCB
2m E E
* 3/ 2
n 1/ 2

2
2 3 C
ApproximationofFDstat.toBoltzmannstat.

WhenE>>KT
DVB
2m E
* 3/ 2
p
E
1/ 2 NotclosetotheFermienergy
gy
2
2 3 V

CHM322A/422 T.G.Gopakumar 3
 Charge carrier density in semiconductor

Electronconcentration n DCB ( E ) f ( E , T )dE

Ec

ForaparabolicDOS DCB
2m E E
* 3/ 2
n 1/ 2

2
2 3 C

2m * 3/ 2
exp E E / K BT

1/ 2
Thatis, n n
E E F
dE If EEEF >>2K
IfE >> 2KBT
2 2 3 C
EC
TheFDcanbeapproximatedto
Boltzmann

1
( E E F ) / K BT
exp ( E EF ) / K BT
exp 1
3/ 2 3/ 2
2mn* K BT 2m*p K BT
n 2 exp ( EC E F ) / K BT p 2 exp ( EV EF ) / K BT
h 2
h 2 x ( E EC ) / K BT

x e dx
1/ 2 x

n N eff
C
expp ( EC EF ) / K BT p N eff
V
ff exp
( EV E F ) / K BT
0
2

CHM322A/422 T.G.Gopakumar 4
 Charge carrier density in semiconductor

Effectiveconductivityincreasesastemperatureincreases

Netconductivityinsemiconductor

E g / K BT
np N eff
V C
N eff exp

forintrinsicsemiconductorni =pi

E g / 2 K BT
ni pi N eff
V C
N eff exp

InintrinsicsemiconductortheFermienergyEF

n p N eff
C
exp EC / K BT exp E F / K BT N eff
V
exp EV / K BT exp E F / K BT
V
N eff
exp 2 E F / K BT
C
exp EV EC / K BT
N eff

EV EC K BT N eff EV EC K BT m*p
V

EF ln C ln *
2 2 N 2 2 m
eff n

CHM322A/422 T.G.Gopakumar 5
 Fermi energy/level in intrinsic semiconductor

EV EC K BT N eff EV EC K BT m*p
V

EF ln C ln *
2 2 N 2 2 m
eff n

Caseof
intrinsic
intrinsic
semi
conductor,
only
arbitrary
DOS
DOS
functions

ThepositionofFermienergyiscontrolledbytherationofeffectivedensityofCBandVB
The position of Fermi energy is controlled by the ration of effective density of CB and VB
Chargeneutralityshouldbepresentatalltemperature

CHM322A/422 T.G.Gopakumar 6
 How is the real DOS of intrinsic Silicon look like ?

DFT/metaGGA

EV =0.61eV,E
= 0 61 eV EC =0.57eV
= 0 57 eV (withrespecttoE
(with respect to EF)
Eg =1.18eV

http://quantumwise.com/documents/tutorials/ATK11.8/SiliconOptical/index.html/chap.Si.Band.html

CHM322A/422 T.G.Gopakumar 7
 Fermi energy/level in doped semiconductor
ndopedsilicon pdopedsilicon

Pentavalent atoms Trivalentatoms

contribute contribute
additional deficienciesof
electrons valenceelectrons
(holes)

Extrahole
states

Extraelectron
states

CHM322A/422 T.G.Gopakumar 8