FAST LEARNING

ACADEMY
Paper: - Objective+subjective Subject: - Physics Marks: (50)
Class: - 2nd Year chap 18 Time: - 1:30 MINT

Q.No.1.Encircle the most suitable option given with each statement. (16)
1. A transistor has a base current of 1 mA and emitter current of 100 mA. The collector current will be.
a) 100 mA b) 1 mA c) 99 mA d) 10 mA
2. The width of depletion region of a junction.
a) Increases under forward bias b) Is independent of applied voltage
c) Increases under revere bias d) both b and c
3. In the forward region, the voltage at which the current starts to increase rapidly is called.
a) Barrier potential b) Knee voltage c) Applied voltage d) None of these
4. The barrier potential across the p-n junction is created by.
a) Majority carriers b) Minority carries
c) Fixed rows of oppositely charged ions d) Depletion layer
5. A light emitting diode (LED) is made from.
a) Gllium arsenide (GaAs) b) Gallium phosphide (GaP)
c) Gallium arsenide phosphide (GaAsP) d) All of these
6. The emitter, collector and base currents IE, IC and Is respectively are related as.
a) IE= IC-IB b) IB=IE+IC c) IE=IC+IB d) IC=IE+IB
7. An XOR gate produces 1 output only when its two inputs are.
a) High b) Low c) Different d) Same
8. Which of the following gates is a universal gate?
a) OR b) AND c) NOT d) NAND
9. Semi conductor devices are.
a) Temperature dependent b) Voltage dependent c) Current dependent d) Power dependent
10. How many diodes are used in a bridge rectifier?
a) 1 b) 2 c) 3 d) 4
11. Diffusion of free electrons across the unbiased p-n junction produces.
a) Forward bias b) Reverse bias c) Break down d) Depletion region
12. The term transistor stands for.
a) Transfer of resistance b) Transfer of voltage c) Transfer of power d) Transfer of current
13. A light emitting diode (LED) emits light only when.
a) Forward biased b) Reverse biased c) Unbiased d) None of these
14. For common emitter configuration of n-p-n transistor, the current gain is given by.

a) b) c) d)

15. When the emitter-base junction of a transistor is reverse biased, collector current.
a) Reverses b) Increases c) Decreases d) Stops
16. The potential difference across depletion region is _________ in case of silicon
a) 0.3 volt b) 0.7 volt c) 0.6 volt d) zero
FAST LEARNING
ACADEMY
Q.No.2Give brief answers to the following questions 8x2=16
1. Why is the base current in a transistor very small?
2. Why photo-diode is operated in reverse biased state?
3. The transistor has a collector current of 10mA and a base current of 40A, What is the current
gain of the transistor?
4. What is the effect of forward and reverse- biasing of a diode on the width of depletion region?
5. Why ordinary silicon diodes do not emit light.
6. What is the net charge on a n-type or a p-type semiconductor?
7. Why charge carriers are not present in the depletion region?
8. How does the motion of an electron in n-type substance differ from the motion of holes in a p-
type substance?
ANSWER THE FOLLOWING 9X2= 18
Q.No.3 a) Explain how Transistor can be used as an amplifier? Derive the expression for its
voltage gain. (06)

b) The current flowing into the base of a transistor is 100A. Find its collector
current and emitter current if the value of current gain is 100?
(03)
Q.No.4 a) Find the voltage gain of the inverting operational amplifier (06)
(b) In a certain circuit, the transistor has collector current of 10 mA and a base current of 40 A.
What is the current gain of the transitor? (03)