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Breakdown Voltage
Thermal Resistance (C/W)
D=1 (D.C.)
2.0 t1 D=t1/tP
C
as Collector Cut-Off ICBO -0.1 A VCB=-30V
1.5
e
te tP Current -10 A VCB=-30V,T amb =100C
m
pe 100 D=0.5
ra
tu Emitter Cut-Off Current IEBO -0.1 A VEB=-4V, IE=0
1.0 Am re
bie
nt t
em
per D=0.2 Collector-Emitter VCE(sat) -0.12 -0.3 V IC=1A, IB=-100mA*
0.5 at u Saturation Voltage -0.23 -0.5 V IC=2A, IB=-200mA*
re D=0.1
Single Pulse
3-255 3-254
PNP SILICON PLANAR
ZTX749 MEDIUM POWER TRANSISTOR ZTX749
ISSUE 1 APRIL 94
ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). FEATURES
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. * 25 Volt VCEO
* 2 Amp continuous current
Transition fT 100 160 MHz IC=-100mA,
Frequency VCE=-5V f=100MHz * Low saturation voltage
Breakdown Voltage
Thermal Resistance (C/W)
D=1 (D.C.)
2.0 t1 D=t1/tP
C
as Collector Cut-Off ICBO -0.1 A VCB=-30V
1.5
e
te tP Current -10 A VCB=-30V,T amb =100C
m
pe 100 D=0.5
ra
tu Emitter Cut-Off Current IEBO -0.1 A VEB=-4V, IE=0
1.0 Am re
bie
nt t
em
per D=0.2 Collector-Emitter VCE(sat) -0.12 -0.3 V IC=1A, IB=-100mA*
0.5 at u Saturation Voltage -0.23 -0.5 V IC=2A, IB=-200mA*
re D=0.1
Single Pulse
3-255 3-254
ZTX749
TYPICAL CHARACTERISTICS
td
tr
1.8 tf
ns IB1=IB2=IC/10
1.6 160 VCE=-10V
1.4 ts
140
Switching time
ns
1.2 1200 120
ts
VCE(sat) - (Volts)
0.6 600 60
IC/IB=100
0.4 40
tr td
0.2 200 20
IC/IB=10
0 0
0.001 0.01 0.1 1 10 0.01 0.1 1
1.2
200 1.0
VCE=2V
VBE(sat) - (Volts)
hFE - Gain
160 IC/IB=10
0.8
120
0.6 IC/IB=100
80
0.4
40
0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10
hFE v IC VBE(sat) v IC
1.0
1.0
VCE=2V
VBE - (Volts)
0.8
D.C.
1s
100ms
0.6 10ms
0.1 1.0ms
0.4
3-256
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