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June 2014
FQA24N60
N-Channel QFET MOSFET
600 V, 23.5 A, 240 m
Description Features
This N-Channel enhancement mode power MOSFET is 23.5 A, 600 V, RDS(on) = 240 m (Max.) @ VGS = 10 V,
produced using Fairchild Semiconductors proprietary ID = 11.8 A
planar stripe and DMOS technology. This advanced Low Gate Charge (Typ. 110 nC)
MOSFET technology has been especially tailored to Low Crss (Typ. 56 pF)
reduce on-state resistance, and to provide superior
100% Avalanche Tested
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
G
D TO-3PN
S
S
Thermal Characteristics
Symbol Parameter FQA24N60 Unit
RJC Thermal Resistance, Junction-to-Case, Max. 0.4 CW
RCS Thermal Resistance, Case-to-Sink, Typ. 0.24 CW
RJA Thermal Resistance, Junction-to-Ambient, Max. 40 CW
Electrical Characteristics T C
o
= 25 C unless otherwise noted.
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 600 -- -- V
BVDSS Breakdown Voltage Temperature
ID = 250 A, Referenced to 25C -- 0.6 -- V/C
/ TJ Coefficient
IDSS VDS = 600 V, VGS = 0 V -- -- 10 A
Zero Gate Voltage Drain Current
VDS = 480 V, TC = 125C -- -- 100 A
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 3.0 -- 5.0 V
RDS(on) Static Drain-Source
VGS = 10 V, ID = 11.8 A -- 0.18 0.24
On-Resistance
gFS Forward Transconductance VDS = 50 V, ID = 11.8 A -- 22.5 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V, -- 4200 5500 pF
Coss Output Capacitance f = 1.0 MHz -- 550 720 pF
Crss Reverse Transfer Capacitance -- 56 75 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 300 V, ID = 23.5 A, -- 90 190 ns
tr Turn-On Rise Time RG = 25 -- 270 550 ns
td(off) Turn-Off Delay Time -- 200 410 ns
(Note 4)
tf Turn-Off Fall Time -- 170 350 ns
Qg Total Gate Charge VDS = 480 V, ID = 23.5 A, -- 110 145 nC
Qgs Gate-Source Charge VGS = 10 V -- 25 -- nC
Qgd Gate-Drain Charge (Note 4) -- 53 -- nC
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V 1
150
10
ID, Drain Current [A]
25
0
10
-55
0
10 Notes : Notes :
1. 250s Pulse Test 1. VDS = 50V
2. TC = 25 2. 250s Pulse Test
-1
10
10
-1
10
0
10
1 2 4 6 8 10
1.0
0.8
Drain-Source On-Resistance
VGS = 10V
IDR, Reverse Drain Current [A]
1
10
RDS(ON) [ ],
0.6
VGS = 20V
0.4
0
10
150 25
0.2
Notes :
1. VGS = 0V
Note : TJ = 25 2. 250s Pulse Test
0.0 -1
0 10 20 30 40 50 60 70 80 90 100 10
0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID, Drain Current [A] VSD, Source-Drain voltage [V]
12
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
8000 Crss = Cgd VDS = 120V
10
VDS = 300V
6000 8
Capacitance [pF]
Coss
6
4000
Notes : 4
1. VGS = 0 V
Crss 2. f = 1 MHz
2000
2
Note : ID = 23.5 A
0 0
-1 0 1 0 20 40 60 80 100 120
10 10 10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
1.2 3.0
2.5
Drain-Source Breakdown Voltage
1.1
Drain-Source On-Resistance
BV DSS , (Normalized)
RDS(ON) , (Normalized)
2.0
1.0 1.5
1.0
0.9 Notes :
1. VGS = 0 V
Notes :
2. ID = 250 A 0.5 1. VGS = 10 V
2. ID = 11.8 A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]
24
Operation in This Area
is Limited by R DS(on)
20
2
10
10 s
100 s 16
ID, Drain Current [A]
1 ms
1
10 10 ms 12
DC
8
0
10 Notes :
o
1. TC = 25 C 4
o
2. TJ = 150 C
3. Single Pulse
-1
10 0
10
0
10
1
10
2 3
10 25 50 75 100 125 150
Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
ZJC(t), Thermal Response [oC/W]
D = 0 .5
-1
10 N o te s :
0 .2 1 . Z J C ( t) = 0 .4 /W M a x .
2 . D u ty F a c to r , D = t 1 /t 2
0 .1 3 . T J M - T C = P D M * Z J C ( t)
0 .0 5
0 .0 2 PDM
10
-2 0 .0 1 t1
s i n g l e p u ls e t2
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
DUT
IG = const.
3mA
Charge
RL VDS
VDS 90%
VGS VDD
RG
10%
VGS
V
10V
GS
DUT
td(on) tr td(off)
tf
t on t off
L 1 BVDSS
VDS EAS = ---- L IAS2 --------------------
2 BVDSS - VDD
BVDSS
ID
IAS
RG
VDD ID (t)
V
10V
GS
GS DUT VDD VDS (t)
tp
tp Time
VDS
I SD
L
Driver
RG
Same Type
as DUT VDD
IRM
VSD VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILDS WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.