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XI &XII (CBSE & ICSE BOARD) IIT-JEE/AIIMS/AIPMT/CPMT/UPTU

Good Luck for Your Competitive Exams 5. In a forward biased p-n junction diode, the potential
barrier in the depletion region is of the form :[D KCET 2004]
1. Find VAB : V V

10
30V p n p n
A (1) (2)
10 10 V
B V

(1) 10V (2) 20V

(3) 30V (4) none p n p n
(3) (4)
2. A full wave rectifier circuit along with the input and output 6. What is the voltage gain in a common emitter amplifier
voltage is shown in the figure then output due to diode(2) where input resistance is 3 and load resistance is 24
is : [B MP PET 2001]
( = 6)?
+ 1
+ (1) 2.2 (2) 1.2
RL
(3) 4.8 (4) 48
7. Zener dode is used for :
2 (1) rectification
A B C DE F G
(2) stabilization
(1) A, C (2) B, D (3) amplification
(3) B, C (4) A, D (4) producing oscillations in an oscillator

3. In a n-p-n transistor circuit, the collector current is 10 8. Carbon, Silicon and Germanium atoms have four valence
mA. If 90% of the electrons emitted reach the collector, electrons each. Their valence and conduction bonds are
the emitter current (IE) and base current (IB) are given by separated by energy band gaps represented by (Eg)C , (Eg)Si
(1) IE = 1mA; IB = 11 mA and (Eg)Ge respectively. Which one of the following
relationships is true in their case [B AIPMT 2005]
(2) IE = 11 mA ; IB = 1 mA (1) (Eg)C < (Eg)Ge (2) (Eg)C > (Eg)Si
(3) IE = 1 mA; IB = 9 mA (3) (Eg)C = (Eg)Si (4) (Eg)C < (Eg)Si
(4) IE = 9 mA ; IB = 1 mA
9. A common emitter amplifier has a voltage gain of 50, an
4. In the following common emitter configuration an 'npn' input impedance of 100 and an output impedance of
transistor with current gain = 100 is used the output 200 . The power gain of the amplifier is
voltage of amplifier will be : [C AIIMS 2003] (1) 100 (2) 500
(3) 1000 (4) 1250
10. Pure Si at 500 K has equal number of electron (ne) and
10k hole (nh) concentrations to 1.5 1016 m3. Doping by
Vout
indium increases nh to 4.5 1022 m3. The doped
1mV 1k
semiconductor is of :-
(1) p-type having electron concentrations ne = 5 109 m3
(2) n-type with electron concentration ne = 5 1022 m3
(1) 10 mV (2) 0.1 V
(3) P-type with electron concentration ne = 2.5 1010 m3
(3) 1.0 V (4) 10 V
(4) n-type with electron concentration ne=2.5 1023 m3

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11. Transfer characteristics (output voltage (V 0) vs input (B) The base emitter junction is reverse biased
voltage (Vi) for a base biased transistor in CE (C) The input signal is connected in series with the voltage
configuration is as shown in the figure. For using applied to bias the base emitter junction
transistor as a switch, it is used. (D) The input signal is connected in series with the voltage
V0 I II III applied to bias the base collector junction
(1) A, B (2) A, D
(3) A, C (4) only C

17. When a potential difference is applied across, the current

passing through:
(1) a semiconductor at 0K is zero
Vi
(1) in region II (2) in region I (2) a metal at 0K is finite
(3) in region III (4) both in region (I) and (III) (3) a P-N diode at 300K is finite if it is reverse biased
(4) all
12. Platinum and silicon are cooled after heating up to 2500 C.
(1) Resistance of platinum will increase and that of silicon 18. Electric conduction in a semiconductor takes place due to
decreases (1) electrons only
(2) Resistance of silicon will increase and that of platinum (2) holes only
decreases (3) both electrons and holes
(3) Resistance of both will decrease (4) neither electrons nor holes
(4) Resistance of both increases
19. An electric field is applied to a semiconductor. Let the
13. The atomic bonding is same for which of the following number of charge carriers density is 'n' and the average
pairs : drift speed be v. If the temperature is increased :
(1) Ag and Si (2) Ge and Si (1) both n and v will increase
(2) Ne and Ge (4) Nacl and Ge (2) n will increase but v will decrease
(3) v will increase but n will decrease
14. Which of the following energy band diagram shows the N-
(4) both n and v will decrease
type semiconductor :
Conduction Conduction 20. Let np and ne be the numbers of holes and conduction
Band Band electrons in an extrinsic semiconductor.
(1) np > ne (2) np = ne
Eg=1eV Impurity level
1 eV (3) np < ne (4) np ne
21. When an impurity is doped into an intrinsic
Valence Valence
semiconductor, the conductivity of the semiconductor :
(1) Band (2) Band
(1) increases
Valence Valence (2) decreases
Band Band
(3) remains the same
Impurity level (4) become zero
1 eV 1 eV Impurity level
22. The majority current in a p-n junction is
Conduction Conduction
(3) Band (4) Band (1) from the n-side to the p-side
(2) from the p-side to the n-side
15. Which value of potential barrier is in the range, for given (3) from the n-side to the p-side if the junction is forward-
PN junction : biased and in the opposite direction if it is reverse
(1) 0.2 (2) 25 (3) 2.5 (4) 35 biased
(4) from the p-side to the n-side if the junction is forward-
16. A transistor is used in the common emitter mode as an biased and in the opposite direction if it is reverse
amplifier then: biased
(A) The base emitter junction is forward biased

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23. A hole diffuses from the p-side to the n-side in a p-n 28. A two Volts battery forward biases a diode however there
junction. This means that : is a drop of 0.5 V across the diode which is independent
(1) a bond is broken on the n-side and the electron freed of current. Also a current greater then
from the bond jumps to the conduction band 10 mA produces large joule loss and damages diode. If
diode is to be operated at 5 mA, the series resistance to
(2) a conduction electron on the p-side jumps to a broken
be put is :
bond to complete it.
2V
(3) a bond is broken on the n-side and the electron free
from the bond jumps to a broken bond on the p-side
to complete it
(4) a bond is broken on the p-side and the electron free R
from the bond jumps to a broken bond on the n-side
to complete it
(1) 3k (2) 300 k (3) 300 (4) 200 k
24. For the given circuit shown in fig, to act as full wave
29. The resistivity of a semiconductor depends upon its
rectifier : a.c. input should be connected across
................. and ..................... the d.c. output would (1) size (2) nature of solid
appear across ................ and ..................... (3) length (4) size and type of atom
A
30. Which statement is correct for p -type semiconductor
(1) the number of electrons in conduction band is more
than the number of holes in valence band at room
B D
temperature
(2) the number of holes in valence band is more than the
number of electrons in conduction band at room
C
temperature
(1) A, C, B, D (2) B, D, A, C (3) there are no holes and electrons at room temperature
(3) A, B, C, D (4) C, A, D, B (4) number of holes and electrons is equal in valence and
conduction band
25. Two indentical P-N junction are connected in series with a
battery in three ways (fig below). the potential drops 31. The region of transistor in which extra impurity is doped
across the two P-N junction are equal in : to obtain a large number of majority carrier is called as :
(1) emitter
(2) base
+ + +
(3) collector
(4) any one of these depending upon the transistor
(1) circuit 1 and 2 (2) circuit 2 and 3
32. An oscillator is nothing but an amplifier with :
(3) circuit 3 and 1 (4) circuit 1 only
(1) positive feedback
26. What will be conductivity of pure silicon crystal at 300K (2) high gain
temperature. If electron hole pairs per cm3 is 1.072 1010 (3) no feed back
at this temperature, n = 1350 cm2/volt-s and P = 480 (4) negative feed back
cm2/volt-s 33. A device whose one end is connected to ve terminal and
the other is connected to +ve terminal, if both ends are
(1) 3.14 10 -6 mho/cm interchanged with supply then current is not flowing then
(2) 3 106 mho/cm device will be :
(3) 10 -6 mho/cm (1) p-n junction (2) transistor
(4) 106 mho/cm (3) zener diode (4) triode
34. Dapletion layer in p-n junction region is caused by
27. Mobility of electrons in N-type Ge is 5000 cm2/volt sec (1) drift holes
and conductivity 5 mho/cm. If effect of holes is negligible
(2) diffusion of free carriers
then impurity concentration will be :
(3) migration of impurity ions
(1) 6.25 1015/cm3 (2) 9.25 1014/cm3
(3) 6 1013/cm3 (4) 9 1013/cm3 (4) drift of electrons

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35. You are given two circuits as shown in following figure. 41. The logic symbols shown here are logically equivalent to
The logic operation carried out by the two circuit are
respectively : A Y A Y
A B B
(a) (b)
Y
B (1) 'a' AND and 'b' OR gate
A (2) 'a' NOR and 'b' NAND gate
(3) 'a' OR and 'b' AND gate
Y
(4) 'a' NAND and 'b' NOR gate
B 42. The combination of the gates shown will produce
(1) AND, OR (2) OR, AND A
(3) NAND, OR (4) NOR, AND

36. Which of the following Boolean expression is not correct B

(1) A.B = A + B (2) A B = A . B (1) OR gate (2) AND gate
(3) A.B A.B (4) 1 1 1 (3) NOR gate (4) NAND
43. Which of the following represents correctly the truth table
37. When all the inputs of a NAND gate are connected of configuration of gates shown here
together, the resulting circuit is :
A
(1) a NOT gate (2) an AND gate
(3) an OR gate (4) a NOR gate
Y
38. The output Y of the combination of gates shown is equal

AND B
to :
A B Y A B Y
(1) A (2) A 0 0 0 0 0 1
(3) A + B (4) AB 0 1 1 0 1 0
1 0 1 1 0 0
39. The following configuration of gates is equivalent to :
(1) 1 1 1 (2) 1 1 1

A B Y A B Y
0 0 0 0 0 1
0 1 1 0 1 1
1 0 1 1 0 1
` (3) 1 1 0 (4) 1 1 0
(1) NAND (2) OR 44. If a small amount of antimony is added to germanium
(3) XOR (4) NOR crystal : [AIPMT(Pre.) 2011]

40. Which of the following will have an output of 1 (1) it becomes a p-type semiconductor
(2) the antimony becomes an acceptor atom
1 0
(3) there will be more free electrons than holes in the
semiconductor
1 1
(a) (b) (4) its resistance is increased
45. A p-n photodiode is fabricated from a semiconductor with
0
0
Y a band gap of 2.5 eV. It can detect a signal of wavelength
Y"
(1) 4000 (2) 6000
(c) 1 (d) 0 (3) 4000nm (4)6000 nm
(1) a (2) c (3) b (4) d

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